HIGH VOLTAGE MEDIUM
CURRENT DRIVER ARRAYS
DESCRIPTION
The SG2000 series integrates seven NPN Darlington pairs with
internal suppression diodes to drive lamps, relays, and solenoids in
many military, aerospace, and industrial applications that require
severe environments. All units feature open collector outputs with
greater than 50V breakdown voltages combined with 500mA
current carrying capabilities. Five different input configurations
provide optimized designs for interfacing with DTL, TTL, PMOS, or
CMOS drive signals. These devices are designed to operate from
-55°C to 125°C ambient temperature in a 16 pin dual in line ceramic
(J) package and 20 pin Leadless Chip Carrier (LCC). The plastic
dual in–line (N) is designed to operate over the commercial
temperature range of 0°C to 70°C.
FEATURES
•
•
•
•
•
•
•
Seven npn Darlington pairs
-55°C to 125°C ambient operating temperature range
Collector currents to 600mA
Output voltages from 50V to 95V
Internal clamping diodes for inductive loads
DTL, TTL, PMOS, or CMOS compatible inputs
Hermetic ceramic package
HIGH RELIABILITY FEATURES
♦
Available to MIL-STD-883 and DESC SMD
♦
MIL-M38510/14101BEA - JAN2001J
♦
MIL-M38510/14102BEA - JAN2002J
♦
MIL-M38510/14103BEA - JAN2003J
♦
MIL-M38510/14104BEA - JAN2004J
♦
Radiation data available
♦
LMI level "S" processing available
PARTIAL SCHEMATICS
Rev 1.3b
4/7/2005
Copyright
©
1997
1
11861 Western Avenue
∞
Garden Grove, CA 92841
(714) 898-8121
∞
FAX: (714) 893-2570
Microsemi Inc.
ABSOLUTE MAXIMUM RATINGS
(Note 1)
Output Voltage, V
CE
(SG2000, 2010 series) ................................................ 50V
(SG2020 series) .......................................................... 95V
Input Voltage, V
IN
(SG2002,3,4) ............................................................... 30V
Continuous Input Current, I
IN
........................................ 25mA
Note 1. Values beyond which damage may occur.
Peak Collector Current, I
C
(SG2000, 2020) ...................................................... 500mA
(SG2010) ................................................................ 600mA
Operating Junction Temperature
Hermetic (J, L Packages) ......................................... 150°C
Plastic (N, Packages) ............................................... 150°C
Storage Temperature Range .......................... -65°C to 150°C
Lead Temperature (Soldering 10 sec.) ......................... 300°C
RoHS Peak Package Solder Reflow Temp. (40 sec. max. exp.)...... 260°C (+0, -5)
THERMAL DATA
J Package:
Thermal Resistance-
Junction to Case
,
θ
JC
.................. 30°C/W
Thermal Resistance-
Junction to Ambient
,
θ
JA
............... 80°C/W
N Package:
Thermal Resistance-
Junction to Case
,
θ
JC
.................. 40°C/W
Thermal Resistance-
Junction to Ambient
,
θ
JA
.............. 65°C/W
L Package:
Thermal Resistance-
Junction to Case
,
θ
JC
.................. 35°C/W
Thermal Resistance-
Junction to Ambient
,
θ
JA
............ 120°C/W
Note A. Junction Temperature Calculation: T
J
= T
A
+ (P
D
x
θ
JA
).
Note B. The above numbers for
θ
JC
are maximums for the limiting thermal
resistance of the package in a standard mounting configuration.
The
θ
JA
numbers are meant to be guidelines for the thermal
performance of the device/pc-board system. All of the above
assume no ambient airflow.
RECOMMENDED OPERATING CONDITIONS
(Note
2)
Output Voltage, V
CE
SG2000, SG2010 series .............................................. 50V
SG2020 series ............................................................. 95V
Note 2. Range over which the device is functional.
Peak Collector Current, I
C
SG2000, SG2020 series ........................................... 50mA
SG2010 series ........................................................ 500mA
Operating Ambient Temperature Range
SG2000 Series - Hermetic .......................... -55°C to 125°C
SG2000 Series - Plastic .................................. 0°C to 70°C
SELECTION GUIDE
Device
SG2001
SG2002
SG2003
SG2004
SG2011
SG2012
V
CE
Max
50V
50V
50V
50V
50V
50V
I
C
Max
500mA
500mA
500mA
500mA
600mA
600mA
Logic Inputs
General Purpose
PMOS, CMOS
14V-25V PMOS
5V TTL, CMOS
6V-15V CMOS, PMOS
General Purpose
PMOS, CMOS
14V-25V PMOS
Device
SG2013
SG2014
SG2015
SG2021
SG2023
SG2024
V
CE
Max
50V
50V
50V
95V
95V
95V
I
C
Max
600mA
600mA
600mA
500mA
500mA
500mA
Logic Inputs
5V TTL, CMOS
6V-15V CMOS, PMOS
High Output TTL
General Purpose
PMOS, CMOS
5V TTL, CMOS
6V-15V CMOS, PMOS
Rev 1.3b
Copyright
©
1997
2
11861 Western Avenue
∞
Garden Grove, CA 92841
(714) 898-8121
∞
FAX: (714) 893-2570
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, these specifications apply over the operating ambient temperatures for SG2000 series - Hermetic - with -55°C
≤
T
A
≤
125°C
and SG2000 series - Plastic - with 0°C
≤
T
A
≤
70°C. Low duty cycle pulse testing techniques are used which maintains junction and case temperatures equal
to the ambient temperature.)
SG2001 thru SG2004
Parameter
Output Leakage Current (I
CEX
)
Collector - Emitter (V
CE(SAT)
)
Applicable
Devices
All
SG2002
SG2004
All
Temp.
Test Conditions
V
CE
= 50V
V
CE
= 50V, V
IN
= 6V
V
CE
= 50V, V
IN
= 1V
I
C
= 350mA, I
B
= 850µA
I
C
= 200mA, I
B
= 550µA
I
C
= 100mA, I
B
= 350µA
I
C
= 350mA, I
B
= 500µA
I
C
= 200mA, I
B
= 350µA
I
C
= 100mA, I
B
= 250µA
I
C
= 350mA, I
B
= 500µA
I
C
= 200mA, I
B
= 350µA
I
C
= 100mA, I
B
= 250µA
V
IN
= 17V
V
IN
= 3.85V
V
IN
= 5V
V
IN
= 12V
I
C
= 500µA
V
CE
= 2V, I
C
= 300mA
V
CE
= 2V, I
C
= 300mA
V
CE
= 2V, I
C
= 200mA
V
CE
= 2V, I
C
= 250mA
V
CE
= 2V, I
C
= 300mA
V
CE
= 2V, I
C
= 200mA
V
CE
= 2V, I
C
= 250mA
V
CE
= 2V, I
C
= 300mA
V
CE
= 2V, I
C
= 125mA
V
CE
= 2V, I
C
= 200mA
V
CE
= 2V, I
C
= 275mA
V
CE
= 2V, I
C
= 350mA
V
CE
= 2V, I
C
= 125mA
V
CE
= 2V, I
C
= 200mA
V
CE
= 2V, I
C
= 275mA
V
CE
= 2V, I
C
= 350mA
V
CE
= 2V, I
C
= 350mA
V
CE
= 2V, I
C
= 350mA
Limits
Units
Min. Typ. Max.
100
µA
500
µA
500
µA
1.6 1.8
V
1.3 1.5
V
1.1 1.3
V
1.25 1.6
V
1.1 1.3
V
0.9 1.1
V
1.6 1.8
V
1.3 1.5
V
1.1 1.3
V
480 850 1300
µA
650 930 1350
µA
240 350 500
µA
650 1000 1450
µA
25
50
µA
18
V
13
V
3.3
V
3.6
V
3.9
V
2.4
V
2.7
V
3.0
V
6.0
V
8.0
V
10
V
12
V
5.0
V
6.0
V
7.0
V
8.0
V
500
1000
15
25
pF
250 1000 ns
250 1000 ns
50
µA
1.7 2.0
V
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
=
=
=
=
=
=
=
=
=
T
MIN
T
MIN
T
MIN
25°C
25°C
25°C
T
MAX
T
MAX
T
MAX
Input Current (I
IN(ON)
)
SG2002
SG2003
SG2004
All
SG2002
SG2003
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
(I
IN(OFF)
)
Input Voltage (V
IN(ON)
)
SG2004
D-C Forward Current
Transfer Ratio (h
FE
)
Input Capacitance (C
IN
)
(Note 3)
Turn-On Delay (TPLH)
Turn-Off Delay (TPHL)
Clamp Diode Leakage Current (I
R
)
Clamp Diode Forward Voltage (V
F
)
SG2001
All
All
All
All
All
T
MAX
T
MIN
T
MAX
T
MIN
T
MIN
T
MIN
T
MAX
T
MAX
T
MAX
T
MIN
T
MIN
T
MIN
T
MIN
T
MAX
T
MAX
T
MAX
T
MAX
T
MIN
25°C
25°C
25°C 0.5 E
IN
to 0.5 E
OUT
25°C 0.5 E
IN
to 0.5 E
OUT
V
R
= 50V
I
F
= 350mA
Note 3. These parameters, although guaranteed, are not tested in production.
Rev 1.3b
Copyright
©
1997
3
11861 Western Avenue
∞
Garden Grove, CA 92841
(714) 898-8121
∞
FAX: (714) 893-2570
ELECTRICAL CHARTACTERISTICS
SG2011 thru SG2015
Parameter
Output Leakage Current (I
CEX
)
Collector - Emitter (V
CE(SAT)
)
(continued)
Applicable
Devices
All
SG2012
SG2014
All
Temp.
Test Conditions
V
CE
= 50V
V
CE
= 50V, V
IN
= 6V
V
CE
= 50V, V
IN
= 1V
I
C
= 500mA, I
B
= 1100µA
I
C
= 350mA, I
B
= 850µA
I
C
= 200mA, I
B
= 550µA
I
C
= 500mA, I
B
= 600µA
I
C
= 350mA, I
B
= 500µA
I
C
= 200mA, I
B
= 350µA
I
C
= 500mA, I
B
= 600µA
I
C
= 350mA, I
B
= 500µA
I
C
= 200mA, I
B
= 350µA
V
IN
= 17V
V
IN
= 3.85V
V
IN
= 5V
V
IN
= 12V
V
IN
= 3V
I
C
= 500µA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 250mA
V
CE
= 2V, I
C
= 300mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 250mA
V
CE
= 2V, I
C
= 300mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 275mA
V
CE
= 2V, I
C
= 350mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 275mA
V
CE
= 2V, I
C
= 350mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 350mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 350mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 500mA
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
=
=
=
=
=
=
=
=
=
T
MIN
T
MIN
T
MIN
25°C
25°C
25°C
T
MAX
T
MAX
T
MAX
Input Current (I
IN(ON)
)
SG2012
SG2013
SG2014
SG2015
All
SG2012
SG2013
(I
IN(OFF)
)
Input Voltage (V
IN(ON)
)
SG2014
SG2015
D-C Forward Current
Transfer Ratio (h
FE
)
Input Capacitance (C
IN
)
(Note 3)
Turn-On Delay (TPLH)
Turn-Off Delay (TPHL)
Clamp Diode Leakage Current (I
R
)
Clamp Diode Forward Voltage (V
F
)
SG2011
All
All
All
All
All
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
T
MAX
T
MIN
T
MAX
T
MIN
T
MIN
T
MIN
T
MAX
T
MAX
T
MAX
T
MIN
T
MIN
T
MIN
T
MAX
T
MAX
T
MAX
T
MIN
T
MIN
T
MAX
T
MAX
T
MIN
25°C
25°C
25°C 0.5 E
IN
to 0.5 E
OUT
25°C 0.5 E
IN
to 0.5 E
OUT
V
R
= 50V
I
F
= 350mA
I
F
= 500mA
Limits
Units
Min. Typ. Max.
100
µA
500
µA
500
µA
1.8 2.1
V
1.6 1.8
V
1.3 1.5
V
1.7 1.9
V
1.25 1.6
V
1.1 1.3
V
1.8 2.1
V
1.6 1.8
V
1.3 1.5
V
480 850 1300
µA
650 930 1350
µA
240 350 500
µA
650 1000 1450
µA
1180 1500 2400
µA
25
50
µA
23.5 V
17
V
3.6
V
3.9
V
6.0
V
2.7
V
3.0
V
3.5
V
10
V
12
V
17
V
7.0
V
8.0
V
9.5
V
3.0
V
3.5
V
2.4
V
2.6
V
450
900
15
25
pF
250 1000 ns
250 1000 ns
50
µA
1.7 2.0
V
2.5
V
Note 3. These parameters, although guaranteed, are not tested in production.
Rev 1.3b
Copyright
©
1997
4
11861 Western Avenue
∞
Garden Grove, CA 92841
(714) 898-8121
∞
FAX: (714) 893-2570
ELECTRICAL CHARACTERISTICS
SG2021 thru SG2024
Parameter
Output Leakage Current (I
CEX
)
Collector - Emitter (V
CE(SAT)
)
(continued)
Applicable
Devices
All
SG2024
All
Temp.
Test Conditions
V
CE
= 95V
V
CE
= 95V, V
IN
= 1V
I
C
= 350mA, I
B
= 850µA
I
C
= 200mA, I
B
= 550µA
I
C
= 100mA, I
B
= 350µA
I
C
= 350mA, I
B
= 500µA
I
C
= 200mA, I
B
= 350µA
I
C
= 100mA, I
B
= 250µA
I
C
= 350mA, I
B
= 500µA
I
C
= 200mA, I
B
= 350µA
I
C
= 100mA, I
B
= 250µA
V
IN
= 3.85V
V
IN
= 5V
V
IN
= 12V
I
C
= 500µA
V
CE
= 2V, I
C
= 300mA
V
CE
= 2V, I
C
= 200mA
V
CE
= 2V, I
C
= 250mA
V
CE
= 2V, I
C
= 300mA
V
CE
= 2V, I
C
= 200mA
V
CE
= 2V, I
C
= 250mA
V
CE
= 2V, I
C
= 300mA
V
CE
= 2V, I
C
= 125mA
V
CE
= 2V, I
C
= 200mA
V
CE
= 2V, I
C
= 275mA
V
CE
= 2V, I
C
= 350mA
V
CE
= 2V, I
C
= 125mA
V
CE
= 2V, I
C
= 200mA
V
CE
= 2V, I
C
= 275mA
V
CE
= 2V, I
C
= 350mA
V
CE
= 2V, I
C
= 350mA
V
CE
= 2V, I
C
= 350mA
Input Current (I
IN(ON)
)
(I
IN(OFF)
)
Input Voltage (V
IN(ON)
)
SG2023
SG2024
All
SG2023
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
=
=
=
=
=
=
=
=
=
T
MIN
T
MIN
T
MIN
25°C
25°C
25°C
T
MAX
T
MAX
T
MAX
SG2024
D-C Forward Current
Transfer Ratio (h
FE
)
Input Capacitance (C
IN
)
(Note 3)
Turn-On Delay (TPLH)
Turn-Off Delay (TPHL)
Clamp Diode Leakage Current (I
R
)
Clamp Diode Forward Voltage (V
F
)
SG2021
All
All
All
All
All
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
T
A
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
T
MAX
T
MAX
T
MIN
T
MIN
T
MIN
T
MAX
T
MAX
T
MAX
T
MIN
T
MIN
T
MIN
T
MIN
T
MAX
T
MAX
T
MAX
T
MAX
T
MIN
25°C
25°C
25°C 0.5 E
IN
to 0.5 E
OUT
25°C 0.5 E
IN
to 0.5 E
OUT
V
R
= 95V
I
F
= 350mA
Limits
Units
Min. Typ. Max.
100
µA
500
µA
1.6 1.8
V
1.3 1.5
V
1.1 1.3
V
1.25 1.6
V
1.1 1.3
V
0.9 1.1
V
1.6 1.8
V
1.3 1.5
V
1.1 1.3
V
650 930 1350
µA
240 350 500
µA
650 1000 1450
µA
25
50
µA
13
V
3.3
V
3.6
V
3.9
V
2.4
V
2.7
V
3.0
V
6.0
V
8.0
V
10
V
12
V
5.0
V
6.0
V
7.0
V
8.0
V
500
1000
15
25
pF
250 1000 ns
250 1000 ns
50
µA
1.7 2.0
V
Note 3. These parameters, although guaranteed, are not tested in production.
Rev 1.3b
Copyright
©
1997
5
11861 Western Avenue
∞
Garden Grove, CA 92841
(714) 898-8121
∞
FAX: (714) 893-2570
微控制器 MCU
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