PD - 97393
DIGITAL AUDIO MOSFET
Features
•
Key parameters optimized for Class-D audio
amplifier applications
•
Low R
DSON
for improved efficiency
•
Low Q
G
and Q
SW
for better THD and improved
efficiency
•
Low Q
RR
for better THD and lower EMI
•
175°C operating junction temperature for
ruggedness
•
Can deliver up to 300W per channel into 8Ω load in
half-bridge configuration amplifier
G
S
D
IRFS4020PbF
IRFSL4020PbF
Key Parameters
200
85
18
6.7
3.2
175
D
V
DS
R
DS(ON)
typ. @ 10V
Q
g
typ.
Q
sw
typ.
R
G(int)
typ.
T
J
max
V
mΩ
nC
nC
Ω
°C
D
G
D
S
G
D
S
D
2
Pak
IRFS4020PbF
G
D
TO-262
IRFSL4020PbF
S
Gate
Drain
Source
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Max.
200
±20
18
13
52
100
52
0.70
-55 to + 175
Units
V
A
f
f
c
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
300
Thermal Resistance
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
f
Parameter
f
Typ.
–––
–––
Max.
1.43
40
Units
°C/W
Notes
through
are on page 2
www.irf.com
1
05/14/09
IRFS/SL4020PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
g
fs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
R
G(int)
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff.
L
D
L
S
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
Internal Source Inductance
Min.
200
–––
–––
3.0
–––
–––
–––
–––
–––
24
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
0.23
85
–––
-13
–––
–––
–––
–––
–––
18
4.5
1.4
5.3
6.8
6.7
3.2
7.8
12
16
6.3
1200
91
20
110
4.5
7.5
–––
–––
105
4.9
–––
20
250
100
-100
–––
29
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nH
–––
ns
Ω
Conditions
V
GS
= 0V, I
D
= 250µA
V
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 11A
V V
DS
= V
GS
, I
D
= 100µA
mV/°C
µA
nA
S
e
V
DS
= 200V, V
GS
= 0V
V
DS
= 200V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 50V, I
D
= 11A
V
DS
= 100V
V
GS
= 10V
I
D
= 11A
See Fig. 6 and 18
nC
V
DD
= 100V, V
GS
= 10V
I
D
= 11A
R
G
= 2.4Ω
V
GS
= 0V
V
DS
= 50V
Ãe
pF
ƒ = 1.0MHz,
See Fig.5
V
GS
= 0V, V
DS
= 0V to 160V
Between lead,
6mm (0.25in.)
from package
and center of die contact
G
S
D
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Ãg
d
Typ.
Max.
Units
mJ
A
mJ
g
Min.
–––
–––
–––
–––
–––
–––
–––
–––
82
280
–––
94
See Fig. 14, 15, 16a, 16b
Diode Characteristics
Parameter
I
S
@ T
C
= 25°C Continuous Source Current
I
SM
V
SD
t
rr
Q
rr
Notes:
Typ. Max. Units
18
A
52
1.3
120
420
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 11A, V
GS
= 0V
T
J
= 25°C, I
F
= 11A
di/dt = 100A/µs
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Ã
e
e
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 1.62mH, R
G
= 25Ω, I
AS
= 11A.
Pulse width
≤
400µs; duty cycle
≤
2%.
R
θ
is measured at
T
J
of approximately 90°C.
Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information.
2
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IRFS/SL4020PbF
100
TOP
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
100
TOP
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
10
BOTTOM
1
5.0V
1
0.1
5.0V
0.01
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
≤
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
≤
60µs PULSE WIDTH
Tj = 175°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
100
VDS = 25V
≤60µs
PULSE WIDTH
T J = 175°C
Fig 2.
Typical Output Characteristics
3.5
RDS(on) , Drain-to-Source On Resistance
3.0
2.5
(Normalized)
ID, Drain-to-Source Current (A)
ID = 11A
VGS = 10V
10
2.0
1.5
1.0
0.5
0.0
1
T J = 25°C
0.1
2
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
10000
VGS, Gate-to-Source Voltage (V)
Fig 4.
Normalized On-Resistance vs. Temperature
12.0
ID= 11A
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C gs + C gd, C ds SHORTED
Crss = C gd
Coss = C ds + C gd
10.0
8.0
6.0
4.0
2.0
0.0
C, Capacitance (pF)
1000
Ciss
VDS= 160V
VDS= 100V
VDS= 40V
Coss
100
Crss
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0
5
10
15
20
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
www.irf.com
3
IRFS/SL4020PbF
100
1000
T J = 175°C
ISD, Reverse Drain Current (A)
10
ID, Drain-to-Source Current (A)
100
10
1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
T J = 25°C
1
100µsec
0.1
0.01
0.001
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
DC
Fig 7.
Typical Source-Drain Diode Forward Voltage
20
VGS(th) , Gate Threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
5.0
18
16
ID, Drain Current (A)
14
12
10
8
6
4
2
0
25
50
75
100
125
150
175
T J , Junction Temperature (°C)
4.0
ID = 100µA
3.0
2.0
1.0
-75 -50 -25 0
25 50 75 100 125 150 175 200
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Junction Temperature
10
Fig 10.
Threshold Voltage vs. Temperature
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
τ
1
τ
2
τ
3
τ
4
τ
4
Ri (°C/W)
0.0283
0.3659
0.7264
0.3093
0.1
τ
J
0.000007
0.000140
0.001376
0.007391
τi
(sec)
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
1
10
100
0.001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRFS/SL4020PbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
300
400
EAS , Single Pulse Avalanche Energy (mJ)
ID = 11A
275
250
225
200
175
150
125
100
75
50
5
6
7
8
9
T J = 25°C
300
ID
TOP
1.6A
2.4A
BOTTOM 11A
T J = 125°C
200
100
0
10 11 12 13 14 15 16
25
50
75
100
125
150
175
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
1000
Fig 13.
Maximum Avalanche Energy vs. Drain Current
100
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming
∆
Tj = 25°C due to
avalanche losses
10
0.01
0.05
1
0.10
0.1
0.01
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current Vs.Pulsewidth
100
EAR , Avalanche Energy (mJ)
80
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 11A
60
40
20
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 15.
Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 17a, 17b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
∆T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
DT/
Z
thJC
I
av
= 2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
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