SMD Type
PNP Transistors
2SA1611
Transistors
■
Features
●
High DC Current Gain
●
High Voltage
●
Complementary to 2SC4177
1.Base
2.Emitter
3.Collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
T
stg
Rating
-60
-50
-5
-100
150
833
150
-55 to 150
mA
mW
℃/W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Transition frequency
(Note.1)
Collector output capacitance
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE
h
FE
C
ob
f
T
Test Conditions
Ic= -100 μA， I
E
=0
Ic= -1 mA，I
B
=0
I
E
= -100μA， I
C
=0
V
CB
= -60 V , I
E
=0
V
EB
= -5V , I
C
=0
I
C
=-100 mA, I
B
=-10 mA
I
C
=-100 mA, I
B
=-10 mA
V
CE
= -6V, I
C
= -1mA
V
CE
= -6V, I
C
= -1mA
V
CB
= -10V,I
E
=0, f=1MHz
V
CE
= -6V, I
C
= -10mA
-0.58
90
4.5
180
Min
-60
-50
-5
-0.1
-0.1
-0.3
-1.2
-0.68
600
pF
MHz
V
uA
V
Typ
Max
Unit
Note.1: Pulse test: pulse width
≤350μs,
duty cycle≤ 2.0%.
■
Classification of h
fe
Type
Range
Marking
2SA1611-M4
90-180
M4
2SA1611-M5
135-270
M5
2SA1611-M6
200-400
M6
2SA1611-M7
300-600
M7
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1
SMD Type
PNP Transistors
2SA1611
■
Typical Characterisitics
-4
Transistors
Static Characteristic
COMMON
EMITTER
T
a
=25
℃
h
FE
300
h
FE
——
I
C
COMMON EMITTER
V
CE
=-6V
(mA)
-3
-20uA
-18uA
-16uA
-14uA
T
a
=100
℃
200
I
C
COLLECTOR CURRENT
DC CURRENT GAIN
T
a
=25
℃
-2
-12uA
-10uA
-8uA
-6uA
-4uA
I
B
=-2uA
-0
-2
-4
-6
-8
-10
100
-1
-0
0
-0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
-500
V
CEsat
——
I
C
-1.2
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
-300
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
-0.8
T
a
=25
℃
-100
T
a
=100
℃
T
a
=25
℃
-30
T
a
=100
℃
-0.4
-10
-0.3
β=10
-1
-3
-10
-30
-100
β=10
-0.0
-0.2
-0.5
-1
-3
-10
-30
-100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
-100
I
C
COMMON EMITTER
V
CE
=-6V
—— V
BE
20
C
ob
/ C
ib
——
V
CB
/ V
EB
f=1MHz
I
E
=0/I
C
=0
(mA)
-30
10
-10
Cib
Cob
T
a
=25
℃
T
a
=100
℃
COLLECTOR CURRENT
-3
-1
T
a
=25
℃
CAPACITANCE
C
3
-0.3
-0.1
-0.2
1
-0.1
(pF)
I
C
-0.4
-0.6
-0.8
-1.0
-0.3
-1
-3
-10
-20
BASE-EMMITER VOLTAGE V
BE
(V)
REVERSE VOLTAGE
V
(V)
300
f
T
—— I
C
T
a
=25
℃
V
CE
=-6V
COLLECTOR POWER DISSIPATION
P
C
(mW)
200
P
C
—— T
a
(MHz)
150
f
T
TRANSITION FREQUENCY
200
100
50
100
-1
-3
-10
-30
-100
0
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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