The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 12 December 1999.
INCH-POUND
MIL-PRF-19500/507C
12 September 1999
SUPERSEDING
MIL-S-19500/507B
9 December 1992
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT
VOLTAGE SUPPRESSOR TYPES 1N6036A THROUGH 1N6072A
JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 1500 watt, peak, pulse power, silicon, transient, voltage
suppressor diodes. Four levels of product assurance are provided for each device as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to DO – 13).
1.3 Maximum ratings. Maximum ratings are as shown in columns 5 through 8 of table III herein, and as follows:
P
PP
= 1500 W (see figure 3) at t
p
= 1.0 ms.
P
M(AV)
= 1.0 W (derate at 6.67 mW/°C above T
A
= +25°C) (see 6.4).
-55°C
≤
T
OP
≤
+175°C (ambient), -55°C
≤
T
STG
≤
+175°C (ambient).
1.4 Primary electrical characteristics at T
A
= +25°C. Primary electrical characteristics are shown in columns 2 and 4 of table III herein.
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include
documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has
been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents
cited in section 3 and 4 of this specification, whether or not they are listed.
2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to
the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of
Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500
STANDARD
MILITARY
MIL-STD-750
- Test Methods for Semiconductor Devices.
- Semiconductor Devices, General Specification for.
(Unless otherwise indicated, copies of federal and military specifications, standards, and handbooks are available from the
Standardization Documents Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/507C
2.2 Order of precedence. In the event of a conflict between the text of this specification and the references cited herein, the text of this
document shall take precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific
exemption has been obtained.
3. REQUIREMENTS
3.1 Associated detail specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified
herein.
3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-
PRF-19500.
3.3 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be as specified in MIL-
PRF-19500 and on figure 1 (similar to DO-13) herein.
3.3.1 Metallurgical bond construction. Metallurgically bonded construction is required. The bonding flow shall have flow points above
260°C.
3.3.2 Lead finish. Unless otherwise specified, lead finish shall be solderable in accordance with MIL-STD-750, MIL-PRF-19500, and
herein. Where a choice of lead finish is desired, it shall be specified in the acquisition requirements (see 6.2).
3.4 Marking. Devices shall be marked in accordance with MIL-PRF-19500.
3.5 Electrical performance characteristics. Unless otherwise specified, the electrical performance characteristics are as specified in 1.3,
1.4, and table I herein.
3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a.
b.
c.
Qualification inspection (see 4.2).
Screening (see 4.3).
Conformance inspection (see 4.4).
4.1.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-PRF-19500, and as specified herein except,
lot accumulation shall be 3-months in lieu of 6-weeks.
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and 6.3 herein.
2
MIL-PRF-19500/507C
Dimensions
Symbol
Min
BD
BL
BLT
CD
LD
LL
LU
0.215
0.293
---
0.045
0.025
1.000
---
Inches
Max
0.235
0.357
0.570
0.100
0.035
1.625
0.188
Millimeters
Min
5.46
7.44
---
1.14
0.64
25.40
---
Max
5.97
9.07
14.48
2.54
0.89
41.28
4.78
4
2
5
1
3
Notes
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. The major diameter is essentially constant along its length.
4. Within this zone, diameter may vary to allow for lead finishes and irregularities.
5. Dimension to allow for pinch or seal deformation anywhere along tubulation.
6. Symbol for internal construction of bipolar transient suppressor.
7. Lead 1 shall be electrically connected to the case.
FIGURE 1. Physical dimensions (similar to DO-13).
3
MIL-PRF-19500/507C
4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with MIL-PRF-19500 (table IV), and as
specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I
herein shall not be acceptable.
Screen (see
table IV of
MIL-PRF-19500)
3
Measurement
JANS level
T
(high)
= +175°C
Not applicable
JANTX and JANTXV levels
T
(high)
= +175°C
Not applicable
9, 10, 11
12
See 4.5.1
See 4.5.1
13
Interim electrical, delta, and group A,
subgroups 2 and 3, electrical parameters
not applicable for this screen (performed
in screen 12).
Interim electrical, delta, and group A,
subgroups 2 and 3, electrical
parameters not applicable for this
screen (performed in screen 12).
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. End-point
electrical measurements shall be in accordance with the applicable steps of table II herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in
table VIa (JANS) and table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Electrical measurements (end-points) and delta
requirements shall be in accordance with the applicable steps of table II herein.
4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
B3
B5
Method
4066
1027
Conditions
Condition for surge, 1 cycle, see 4.5.3b.
Condition for accelerated steady-state operation life are as follows: See 4.5.2,
T
A
= +100°C (min); T
J
= +225°C (min); t = 168 hours minimum.
B4 and 6
Not applicable.
NOTE: All electrical measurements and tests shall be performed twice, once in each direction.
4.4.2.2 Group B inspection, table VIb (JAN, JANTX, and JANTXV of MIL-PRF-19500.
Subgroup
B2
B3
B5
Method
4066
1027
Conditions
1 cycle, see 4.5.3b.
See 4.5.1, 1 ms pulse only (see 4.5.3b).
Not applicable.
NOTE: All electrical measurements and tests shall be performed twice, once in each direction.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in
table VII of MIL-PRF-19500. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps
of table II herein.
4
MIL-PRF-19500/507C
4.4.3.1 Group C inspection, table VII of MIL-PRF-19500.
Subgroup
C2
Method
2036
Conditions
Lead tension: Test condition A; weight = 5 pounds; t = 15 ±3 s. Lead fatigue: Test
condition E; weight = 8 ounces.
See 4.5.1, 1 ms pulse only (see 4.5.3b).
Condition for temperature coefficient of breakdown voltage are as follows:
I
(BR)
= column 3 of table III, T
1
= +25°C ±3°C, T
2
= T
1
+100°C; n = 22, c = 0.
C9
Condition for maximum peak pulse current are as follow: See 4.5.3a, (20
µs
pulse
only) 10 pulses; n = 22, c = 0.
C6
C8
1026
NOTE: All electrical measurements and tests shall be performed twice, once in each direction.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows.
4.5.1 Power burn-in (HTRB) and steady-state operation life test conditions. The test conditions and order of events shall be as follows:
a.
Pulse in accordance with 4.5.3b, in polarity A 10 times (screening and group B) and 50 times (group C) at T
A
=
+25°C.
Pulse in accordance with 4.5.3b, in polarity B 10 times (screening and group B) and 50 times (group C) at T
A
=
+25°C.
Read I
D
in polarities A and B at T
A
= +25°C, remove defective devices and record the number of failures.
Apply the working peak reverse voltage (V
WM
) (column 4 of table III) at polarity A at T
A
= +125°C as follows:
(1) 48 hours (JANTX and JANTXV) and 120 hours (JANS) for the screening test.
(2) 170 hours (JAN, JANTX, and JANTXV) for group B steady-state operation life test.
(3) 500 hours for group C steady-state operation life test.
e.
Read I
D
in polarity A at T
A
= +25°C. Devices with
∆I
D
> 50 percent (100 percent for steady-state operation life) of the initial
reading or 1
µA
dc, whichever is greater shall be considered defective. Remove defective devices and record the number of
failures (see NOTE).
Apply the working peak reverse voltage (V
WM
) (column 4 of table III) at polarity B at T
A
= +125°C as follows:
(1) 48 hours (JANTX and JANTXV) and 120 hours (JANS) for the screening test.
(2) 170 hours (JAN, JANTX, and JANTXV) for group B steady-state operation life test.
(3) 500 hours for group C steady-state operation life test.
g.
Read I
D
in polarity B at T
A
= +25°C. Devices with
∆I
D
> 50 percent (100 percent for steady-state operation life) of the initial
reading or 1
µA
dc, whichever is greater shall be considered defective. Remove defective devices and record the number of
failures (see NOTE).
Read V
(BR)
in polarities A and B at T
A
= +25°C. Devices with
∆V
(BR)
> 2 percent (± 5 percent for steady-state operation life) of
the initial reading shall be considered defective. Remove defective devices and record the number of failures (see NOTE).
Read I
D
in polarity A at T
A
= +25°C, remove defective devices and record the number of failures.
b.
c.
d.
f.
h.
i.
NOTE: For the purpose of this test, the direction in which the device is first pulsed shall be considered polarity A and the reverse direction
polarity B.
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