SMD Type
PNP Transistors
2SA1577
Transistors
■
Features
●
Large I
C
. C
Max
.=-500mA
●
Low V
CE(sat)
.Ideal for low-voltage operation.
●
Complements the 2SC4097.
1.Base
2.Emitter
3.Collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
-40
-32
-5
-500
200
150
-55 to 150
mA
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
C
ob
f
T
Test Conditions
Ic= -100 μA， I
E
=0
Ic= -1 mA，I
B
=0
I
E
= -100μA， I
C
=0
V
CB
= -20 V , I
E
=0
V
EB
= -4V , I
C
=0
I
C
=-100 mA, I
B
=-10 mA
I
C
=-100 mA, I
B
=-10 mA
V
CE
= -3V, I
C
= -10mA
V
CB
= -10V,I
E
=0, f=1MHz
V
CE
= -5V, I
C
= -20mA,f=100MHz
82
7
200
Min
-40
-32
-5
-1
-1
-0.4
-1.2
390
pF
MHz
uA
V
V
Typ
Max
Unit
■
Classification of h
fe
Type
Range
Marking
2SA1577-P
82-180
HP
2SA1577-Q
120-270
HQ
2SA1577-R
180-390
HR
www.kexin.com.cn
1
SMD Type
PNP Transistors
2SA1577
■
Typical Characterisitics
-90
Transistors
Static Characteristic
-400uA
COMMON
EMITTER
T
a
=25
℃
h
FE
500
h
FE
——
I
C
COMMON EMITTER
V
CE
=-3V
(mA)
-360uA
-320uA
-60
400
DC CURRENT GAIN
-280uA
-240uA
-200uA
-160uA
T
a
=100
℃
300
COLLECTOR CURRENT
I
C
200
T
a
=25
℃
-30
-120uA
-80uA
I
B
=-40uA
100
-0
-0
-1
-2
-3
-4
-5
-6
0
-7
-10
-100
-500
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
-1.0
V
BEsat
β=10
——
I
C
-1
V
CEsat
——
I
C
-0.8
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
T
a
=25
℃
-0.6
-0.1
T
a
=100
℃
T
a
=25
℃
T
a
=100
℃
-0.01
-0.4
β=10
-0.2
-0.1
-1
-10
-100
-500
-1E-3
-0.1
-1
-10
-100
β=10
-500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
-500
I
C
COMMON EMITTER
V
CE
=-3V
——
V
BE
100
C
ob
/ C
ib
——
V
CB
/ V
EB
f=1MHz
I
E
=0/I
C
=0
-100
T
a
=25
℃
(pF)
C
ib
(mA)
T
a
=100
℃
-10
I
C
COLLCETOR CURRENT
CAPACITANCE
C
10
T
a
=25
℃
-1
C
ob
-0.1
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
1
-0.1
-1
-10
-20
BASE-EMMITER VOLTAGE
V
BE
(V)
REVERSE VOLTAGE
V
(V)
1000
f
T
——
I
C
250
P
C
——
T
a
(MHz)
COLLECTOR POWER DISSIPATION
P
C
(mW)
T
a
=25
℃
-1
-10
200
TRANSITION FREQUENCY
f
T
150
100
100
50
V
CE
=-5V
-100
0
10
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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