SMD Type
PNP Transistors
2SA1461
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
■
Features
+0.1
2.4
-0.1
●
High speed switching
●
High gain bandwidth product
●
Complementary to 2SC3734
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
-0.1
1.9
+0.1
0.97
-0.1
1.Base
2.Emitter
+0.1
0.38
-0.1
0-0.1
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
-40
-40
-5
-200
200
150
-55 to 150
mA
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage *
Base - emitter saturation voltage
DC current gain *
Turn-on time
Storage time
Turn -off time
Collector output capacitance
Transition frequency
* : Pulsed:PW
≤
350us,Duty Cycle
≤
2℅
Classification of h
fe(1)
*
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE(1)
h
FE(2)
t
on
t
stg
t
off
C
ob
f
T
V
CB
= -5V, I
E
= 0,f=1MHz
V
CE
= -20V, I
E
= 10mA
200
2.5
510
V
CC
=-3V,I
C
=-10mA,I
B1
=-I
B2
=-1 mA
110
Test Conditions
Ic= -100 μA， I
E
=0
Ic= -1 mA， I
B
=0
I
E
= -100μA， I
C
=0
V
CB
= -30 V , I
E
=0
V
EB
= -4V , I
C
=0
I
C
=-50 mA, I
B
=-5mA
I
C
=-50 mA, I
B
=-5mA
V
CE
= -1V, I
C
= -10mA
V
CE
=- 10 V, I
C
= -100mA
75
25
-0.1
-0.8
180
100
70
225
300
4.5
pF
MHz
ns
Min
-40
-40
-5
-0.1
-0.1
-0.4
-0.95
300
uA
V
V
Typ
Max
Unit
■
Type
Range
Marking
2SA1461-Y22
75-150
Y22
2SA1461-Y23
100-200
Y23
2SA1461-Y24
150-300
Y24
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