SMD Type
PNP Transistors
2SA1022
SOT-23
Transistors
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
+0.1
2.4
-0.1
●
Complementary to 2SC2295
+0.1
1.3
-0.1
●
High transition frequency f
T
.
1
2
0.95
+0.1
-0.1
0.55
0.4
■
Features
3
+0.05
0.1
-0.01
+0.1
-0.1
1.9
0.97
+0.1
-0.1
1.Base
2.Emitter
+0.1
0.38
-0.1
0-0.1
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
-30
-20
-5
-30
200
150
-55 to 150
mA
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emittercut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base - emitter voltage
DC current gain
Reverse transfer impedance
Noise figure
Common emitter reverse transfer capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE
h
FE
R
rb
NF
C
re
f
T
Test Conditions
Ic= -100 μA， I
E
=0
Ic= -1 mA， I
B
=0
I
E
= -100μA， I
C
=0
V
CB
= -30 V , I
E
=0
V
CE
= -20 V , I
E
=0
V
EB
= -5V , I
C
=0
I
C
=-10 mA, I
B
=-1mA
I
C
=-10 mA, I
B
=-1mA
V
CE
= -10 V , I
C
=-1mA
V
CE
= -10 V , I
C
=-1mA
V
CB
= –10V, I
E
= 1mA, f = 2MHz
V
CB
= –10V,
IE
= 1mA, f = 5MHz
V
CE
= -10V, I
C
= -1mA,f=10.7MHz
V
CB
= -10V, I
E
= 1mA,f=200MHz
150
70
22
2.8
1.2
300
-0.7
220
Ω
dB
pF
MHz
-0.1
-1.2
V
Min
-30
-20
-5
-0.1
-10
-0.1
uA
V
Typ
Max
Unit
■
Classification of h
fe
Type
Range
Marking
2SA1022-B
70-140
EB
2SA1022-C
110-220
EC
www.kexin.com.cn
1
SMD Type
PNP Transistors
2SA1022
■
Typical Characterisitics
P
C
— Ta
240
–30
Transistors
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
Ta=25˚C
–100
–30
–10
–3
–1
V
CE(sat)
— I
C
I
C
/I
B
=10
Collector power dissipation P
C
(mW)
200
–25
Collector current I
C
(mA)
160
–20
I
B
=–250µA
–200µA
120
–15
–150µA
–100µA
–50µA
80
–10
– 0.3
– 0.1
– 0.03
– 0.01
– 0.1 – 0.3
Ta=75˚C
25˚C
–25˚C
40
–5
0
0
20
40
60
80 100 120 140 160
0
0
–2
–4
–6
–8
–10
–1
–3
–10
–30
–100
Ambient temperature Ta (
˚C
)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
h
FE
— I
C
120
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CE
=–10V
I
E
=0
f=1MHz
Ta=25˚C
C
re
— V
CE
Common emitter reverse transfer capacitance C
re
(pF)
5
I
C
=–1mA
f=10.7MHz
Ta=25˚C
6
Forward current transfer ratio h
FE
100
Ta=75˚C
5
4
80
25˚C
–25˚C
4
3
60
3
2
40
2
20
1
1
0
– 0.1 – 0.3
–1
–3
–10
–30
–100
0
– 0.1 – 0.3
–1
–3
–10
–30
–100
0
–1
–3
–10
–30
–100
Collector current I
C
(mA)
Collector to base voltage V
CB
(V)
Collector to emitter voltage V
CE
(V)
f
T
— I
E
600
V
CB
=–10V
Ta=25˚C
24
PG — I
C
V
CE
=–10V
f=100MHz
Ta=25˚C
5
NF — I
E
V
CB
=–10V
f=100MHz
Ta=25˚C
Transition frequency f
T
(MHz)
500
20
4
400
16
Noise figure NF (dB)
–1
–3
–10
–30
–100
Power gain PG (dB)
3
300
12
2
200
8
100
4
1
0
0.1
0.3
1
3
10
30
100
0
– 0.1 – 0.3
0
0.1
0.3
1
3
10
Emitter current I
E
(mA)
Collector current I
C
(mA)
Emitter current I
E
(mA)
2
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