SMD Type
NPN Transistors
2SD2150
Transistors
■
Features
●
Excellent current-to-gain characteristics
●
Low collector saturation voltage V
CE(sat)
●
Complementary to 2SB1412
0.42 0.1
1.70
0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
40
20
6
3
500
150
-55 to 150
A
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
C
ob
f
T
Test Conditions
Ic= 100u A， I
E
= 0
Ic= 1 mA， I
B
= 0
I
E
= 100u A， I
C
= 0
V
CB
= 35 V , I
E
= 0
V
EB
= 5V , I
C
=0
I
C
=2 A, I
B
=100mA
I
C
=2 A, I
B
=100mA
V
CE
= 2V, I
C
= 100mA
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=2V,I
C
=500mA,f=100MHz
180
25
290
Min
40
20
6
0.1
0.1
0.5
1.2
560
pF
MHz
uA
V
V
Typ
Max
Unit
■
Classification of h
fe
Type
Range
Marking
2SD2150-R
180-390
CF R*
2SD2150-S
270-560
CF S*
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1
SMD Type
NPN Transistors
2SD2150
■
Typical Characterisitics
200
Transistors
Static Characteristic
500uA
450uA
COMMON
EMITTER
T
a
=25
℃
1000
h
FE
COMMON EMITTER
V
CE
=2V
——
I
C
COLLECTOR CURRENT I
C
(mA)
DC CURRENT GAIN h
FE
160
400uA
350uA
120
T
a
=100
℃
300uA
250uA
T
a
=25
℃
80
200uA
150uA
40
100uA
I
B
=50uA
0
0
1
2
3
4
5
100
1
10
100
1000
3000
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1200
V
BEsat
——
I
C
1000
V
CEsat
——
I
C
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
1000
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
100
800
T
a
=25
℃
600
T
a
=100
℃
T
a
=25
℃
10
T
a
=100
℃
400
200
0.1
β=20
1
10
100
1000
3000
1
0.1
0.3
β=20
1
10
100
1000
3000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
3000
1000
I
C
V
CE
=2V
——
V
BE
500
C
ob
/ C
ib
——
V
CB
/ V
EB
f=1MHz
I
E
=0/I
C
=0
COLLCETOR CURRENT I
C
(mA)
T
a
=25
℃
100
T
a
=100
℃
CAPACITANCE C (pF)
C
ib
100
10
C
ob
T
a
=25
℃
1
0.1
0
200
400
600
800
1000
10
0.1
1
10
20
BASE-EMMITER VOLTAGE
V
BE
(mV)
REVERSE VOLTAGE
V
(V)
500
f
T
——
I
C
COLLECTOR POWER DISSIPATION
P
C
(mW)
600
P
C
——
T
a
TRANSITION FREQUENCY f
T
(MHz)
500
400
100
300
200
10
T
a
=25
℃
2
10
100
0
0
25
50
75
100
125
150
V
CE
=2V
100
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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