SMD Type
NPN Transistors
2SC4672
Transistors
■
Features
●
Low Saturation Voltage
●
Excellent h
FE
Characteristics
●
Complementary to 2SA1797
0.42 0.1
1.70
0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
T
stg
Rating
60
50
6
2
500
250
150
-55 to 150
A
mW
℃/W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
C
ob
f
T
Test Conditions
Ic= 50 μA， I
E
= 0
Ic= 1 mA， I
B
= 0
I
E
= 50μA， I
C
= 0
V
CB
= 60V , I
E
= 0
V
EB
= 5V , I
C
=0
I
C
=1A, I
B
=50mA
I
C
=1A, I
B
=50mA
V
CE
= 2V, I
C
= 500mA
V
CB
= 10V, I
E
= 0,f=1MHz
V
CE
= 2V, I
C
= 500mA,f=100MHz
82
25
210
Min
60
50
6
0.1
0.1
0.35
1.2
390
pF
MHz
uA
V
V
Typ
Max
Unit
■
Classification of h
fe
Type
Range
Marking
2SC4672-P
82-180
DKP
2SC4672-Q
120-270
DKQ
2SC4672-R
180-390
DKR
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1
SMD Type
NPN Transistors
2SC4672
■
Typical Characterisitics
1.0
Transistors
Static Characteristic
COMMON EMITTER
T
a
=25
℃
300
h
FE
—— I
C
COMMON EMITTER
V
CE
=2V
4.0mA
3.6mA
h
FE
3.2mA
200
I
C
(A)
0.8
T
a
=100
℃
COLLECTOR CURRENT
2.8mA
2.4mA
0.4
2.0mA
1.6mA
DC CURRENT GAIN
0.6
T
a
=25
℃
100
0.2
1.2mA
0.8mA
I
B
=0.4mA
0
1
2
3
4
0.0
0
0.1
0.3
1
2
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
0.5
V
CEsat
β=20
—— I
C
1.2
V
BEsat
—— I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
0.4
1.0
0.3
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
T
a
=25
℃
0.8
0.2
T
a
=100
℃
T
a
=100
℃
0.6
0.1
T
a
=25
℃
0.4
β=20
0.0
0.1
0.3
1
2
0.2
0.1
0.3
1
2
COLLECTOR CURRENT
I
C
(A)
COLLECTOR CURRENT
I
C
(A)
I
C
2
—— V
BE
1000
C
ob
/ C
ib
—— V
CB
/ V
EB
f=1MHz
I
E
=0/I
C
=0
COMMON EMITTER
V
CE
=2V
C
ib
(pF)
100
COLLECTOR CURRENT
I
C
(A)
1
T
a
=25
℃
C
T
a
=25
℃
0.3
CAPACITANCE
T
a
=100
℃
C
ob
10
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1
0.1
0.3
1
3
10
20
BASE-EMMITER VOLTAGE V
BE
(V)
REVERSE VOLTAGE
V
(V)
600
P
C
——
T
a
500
COLLECTOR POWER DISSIPATION
P
C
(mW)
400
300
200
100
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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