SMD Type
PNP Transistors
2SB1260
Transistors
■
Features
●
Hight breakdown voltage and high current.
●
Low collector-emitter saturation voltage V
CE(sat)
●
Good h
FE
linearty.
●
Complementary to 2SD1898
0.42 0.1
1.70
0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
stg
Rating
-80
-80
-5
-1
-2
0.5
2
150
-55 to 150
A
W
V
Unit
℃
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
C
ob
f
T
Test Conditions
Ic= -100 μA， I
E
=0
Ic= -1 mA, I
B
=0
I
E
= -100μA， I
C
=0
V
CB
= -60V , I
E
=0
V
EB
= -4V , I
C
=0
I
C
=-500 mA, I
B
=-50mA
I
C
=-500 mA, I
B
=-50mA
V
CE
= -3V, I
C
= -100 mA
V
CB
= -10V, I
E
= 0,f=1MHz
V
CE
= -10V, I
E
= 50mA,f=100MHz
120
20
100
Min
-80
-80
-5
-1
-1
-0.4
-1.2
390
pF
MHz
uA
V
V
Typ
Max
Unit
■
Classification of h
fe
Type
Range
Marking
2SB1260 -Q
120-270
BE Q*
2SB1260 -R
180-390
BE R*
www.kexin.com.cn
1
SMD Type
PNP Transistors
2SB1260
■
Typical Characterisitics
−1000
Transistors
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(A)
Ta
=
25
°
C
V
CE
= −5V
−1.0
−0.8
−0.6
−0.4
−0.2
0
0
Ta
=25 °
C
−4.5mA
1000
500
Ta
=25 °
C
DC CURRENT GAIN : h
−100
−4mA
−3.5mA
−3mA
−2.5mA
−2mA
−1.5mA
−1mA
−0.5mA
I
B
=0mA
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0
FE
200
100
50
V
CE
= −
3V
−1V
−10
1
20
10
−1 −2
−0.1
0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : V
BE
(V)
−5 −10 −20
−50 −100 −200 −500 −1000 −2000
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.1
Grounded emitter propagation
characteristics
Fig.2
Grounded emitter output
characteristics
Fig.3
DC current gain vs.
collector current
TRANSITION FREQUENCY : f
T
(MHz)
Ta
=25 °
C
−2
−1
−0.5
−0.2
−0.1
−0.05
−0.02
−0.01
−
1
−
2
−
5
−
10
−
20
−
50
−
100
−
200
−
500
−
1000
−
2000
COLLECTOR CURRENT : I
C
(mA)
I
C
/I
B
=20
10
500
200
100
50
20
10
5
2
1
1
2
5
10 20
Ta
=
25
°
C
V
CE
= −5V
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
1000
1000
500
200
100
50
20
10
5
2
1
−0.1
-0.2
−0.5
-1
−2
Ta=25°C
f=1MHz
I
E
=0A
50 100 200
500 1000
−5 −10 −20
−50 −100
EMITTER CURRENT : I
E
(mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.4
Collector-emitter saturation
voltage vs. collector current
Fig.5
Gain bandwidth product
vs. emitter current
Fig.6
Collector output capacitance
vs. collector-base voltage
2
www.kexin.com.cn
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
