SM564164U7UX6BU
May 31, 2000
Revision History
• May 31, 2000
Added Command Truth Table, Mode Register Table and notes.
Modified waveforms ( Auto Refresh (CBR) cycle and Power Down Mode and Clock Mask).
• May 29, 1998
Datasheet released.
C
orporate Headquarters:
P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: +44-1908 234030 • Fax: +44-1908-234191
Asia/Pacific:
Plot 18, Lrg Jelawat 4, Kawasan Perindustrian Seberang Jaya 13700, Prai, Penang, Malaysia • Tel: +604-3992909 • Fax: +604-3992903
1
SM564164U7UX6BU
May 31, 2000
128MByte (16M x 64) Synchronous DRAM Module - 16Mx4 based
168-pin DIMM, Registered
Features
•
•
•
•
•
•
•
Standard
Configuration
Cycle Time
CAS# Latency
Burst Length
Burst Type
No. of Internal
Banks per SDRAM
:
:
:
:
:
:
:
JEDEC
Non-Parity
10/12/15ns
3&4
1, 2, 4, 8 or Page
Linear/Interleave
2/4
•
•
•
•
•
•
•
Operating Voltage :
3.3V
Refresh
:
4K/8K
Device Physicals
:
400mil TSOP
Lead Finish
:
Gold
Length x Height
:
5.250" x 1.750"
No. of sides
:
Double-sided
Mating Connector (Examples)
Vertical
:
AMP-390052-6
Functional Diagram
REGE
DQMB0~DQMB7
S0#, S2#
CKE0, CKE1
RAS#
CAS#
WE#
R
E
G
I
S
T
E
R
S
RDQMB0~RDQMB7
RS0#, RS2#
RCKE0
RS0#
RCKE1
16Mx16
Block
16Mx16
Block
RCKE0
RS2#
RCKE1
16Mx16
Block
16Mx16
Block
PCK0
PLL
Clock
Buffer
Feedback
DQ0~DQ15
DQ32~DQ47
DQ16~DQ31
DQ48~DQ63
DQ0~DQ63
CK0
PCK5
PCK1~PCK4
(To all SDRAMs)
Notes:
1.
A0~A11 and BA0 to all SDRAMs through registers.
2.
A12/BA1 to all SDRAMs through registers (see page 2 for details).
3.
Register Block comprises of two registers.
4.
Data is terminated using 10Ω series resistors.
5.
REGE, when asserted active high the buffer-register operates in
register mode, when deasserted inactive low the buffer-register
operates in “real-time” buffer mode.
6.
CLK signals are terminated with series resistors and/or padding
capacitors depending on load per clock.
7.
For RDQMB control see note on page 2.
8.
Each 16Mx16 Block comprises of four 16Mx4 SDRAMs.
9.
WP signal has a pull-up of 100KΩ.
SA0~SA2
SCL
WP
A0~A2
SCL
WP
SDA
SDA
SERIAL PD
EEPROM
V
CC
V
SS
Decoupling capacitors
to all devices.
( All specifications of this device are subject to change without notice.)
C
orporate Headquarters:
P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: +44-1908 234030 • Fax: +44-1908-234191
Asia/Pacific:
Plot 18, Lrg Jelawat 4, Kawasan Perindustrian Seberang Jaya 13700, Prai, Penang, Malaysia • Tel: +604-3992909 • Fax: +604-3992903
2
SM564164U7UX6BU
May 31, 2000
Pin Name
A0~A12
BA0, BA1
DQ0~DQ63
CK0~CK3
RAS#
CAS#
CKE0, CKE1
DQMB0~DQMB7
S0#, S2#
Addresses
Bank Select Address
Data Inputs/Outputs
Clock Inputs
Row Address Strobes
Column Address Strobes
Clock Enable
DQ Mask Enables
Chip Selects
WE#
REGE
SA0~SA2
SDA
SCL
WP
V
CC
V
SS
NC
Write Enable
Register Enable
Decode Inputs
Serial Data Input/Output
Serial Clock
Serial EEPROM Write Protect
Power Supply
Ground
No Connection
Note:
RDQMs v/s Data I/Os
RDQMB0
RDQMB1
RDQMB2
RDQMB3
RDQMB4
RDQMB5
RDQMB6
RDQMB7
controls
controls
controls
controls
controls
controls
controls
controls
DQ0~DQ7
DQ8~DQ15
DQ16~DQ23
DQ24~DQ31
DQ32~DQ39
DQ40~DQ47
DQ48~DQ55
DQ56~DQ63
Pin
No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
Pin
Designation
V
SS
DQ0
DQ1
DQ2
DQ3
V
CC
DQ4
DQ5
DQ6
DQ7
DQ8
V
SS
DQ9
DQ10
DQ11
DQ12
DQ13
V
CC
DQ14
DQ15
NC
NC
V
SS
NC
NC
V
CC
WE#
DQMB0
DQMB1
S0#
NC
V
SS
A0
A2
A4
A6
A8
A10/AP (Note 1)
BA1 (Note 2)
V
CC
V
CC
CK0
Pin
No.
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
Pin
Designation
V
SS
NC
S2#
DQMB2
DQMB3
NC
V
CC
NC
NC
NC
NC
V
SS
DQ16
DQ17
DQ18
DQ19
V
CC
DQ20
NC
NC
CKE1
V
SS
DQ21
DQ22
DQ23
V
SS
DQ24
DQ25
DQ26
DQ27
V
CC
DQ28
DQ29
DQ30
DQ31
V
SS
CK2
NC
WP
SDA
SCL
V
CC
Pin
No.
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
Pin
Designation
V
SS
DQ32
DQ33
DQ34
DQ35
V
CC
DQ36
DQ37
DQ38
DQ39
DQ40
V
SS
DQ41
DQ42
DQ43
DQ44
DQ45
V
CC
DQ46
DQ47
NC
NC
V
SS
NC
NC
V
CC
CAS#
DQMB4
DQMB5
NC
RAS#
V
SS
A1
A3
A5
A7
A9
BA0
A11
V
CC
CK1
A12 (Note 3)
Pin
No.
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
Pin
Designation
V
SS
CKE0
NC
DQMB6
DQMB7
NC
V
CC
NC
NC
NC
NC
V
SS
DQ48
DQ49
DQ50
DQ51
V
CC
DQ52
NC
NC
REGE
V
SS
DQ53
DQ54
DQ55
V
SS
DQ56
DQ57
DQ58
DQ59
V
CC
DQ60
DQ61
DQ62
DQ63
V
SS
CK3
NC
SA0
SA1
SA2
V
CC
Addressing Scheme
2 Bank SDRAMs
A0~A12 : Row Addresses
A0~A9 : Column Addresses
BA0
: Bank Select Address
4 Bank SDRAMs
A0~A11 : Row Addresses
A0~A9 : Column Addresses
BA0, BA1: Bank Select Addresses
Note :
1. A10/AP initiates Auto-precharge.
2. BA1 is NC for 2 bank SDRAMs.
3. A12 is NC for 4 bank SDRAMs.
C
orporate Headquarters:
P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: +44-1908 234030 • Fax: +44-1908-234191
Asia/Pacific:
Plot 18, Lrg Jelawat 4, Kawasan Perindustrian Seberang Jaya 13700, Prai, Penang, Malaysia • Tel: +604-3992909 • Fax: +604-3992903
3
SM564164U7UX6BU
May 31, 2000
DC Characteristics
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V
SS
Power Dissipation
Operating Temperature
Storage Temperature
Short Circuit Output Current
Symbol
V
T
P
T
T
opr
T
stg
I
OS
Ratings
- 0.5 to +4.6
19
0 to +70
- 55 to +125
50
Unit
V
W
°C
°C
mA
Recommended DC Operating Conditions
(T
A
= 0 to +70°C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min
3.0
0
2.0
-0.3
Typ
3.3
0
-
-
Max
3.6
0
V
CC
+0.5
0.8
Unit
V
V
V
V
Capacitance
(V
CC
= 3.3V±0.3V, T
A
= +25°C)
Parameter
Input Capacitance (All signals except Data)
Input/Output Capacitance (DQ0~DQ63)
Notes : Capacitance is sampled per Mil-Std-883.
Symbol
C
I1
C
I/O
Max
18
17
Unit
pF
pF
C
orporate Headquarters:
P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: +44-1908 234030 • Fax: +44-1908-234191
Asia/Pacific:
Plot 18, Lrg Jelawat 4, Kawasan Perindustrian Seberang Jaya 13700, Prai, Penang, Malaysia • Tel: +604-3992909 • Fax: +604-3992903
4
SM564164U7UX6BU
May 31, 2000
DC Characteristics (cont’d)
(V
CC
= 3.3V±0.3V, V
SS
= 0V, T
A
= 0 to +70 °C)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
I
LI
I
LO
V
OH
V
OL
Test Conditions
0V
≤
V
in
≤
V
CC
+0.3V
0V
≤V
out
≤
V
CC
D
out
= Disable
High I
out
= -2mA
Low I
out
= 2mA
2.4
-
-
0.4
2.4
-
-
0.4
2.4
-
-
0.4
V
V
10ns
12ns
Min Max Min Max
-10
10
-10
10
-10
10
-10
10
15ns
Min Max
-10
10
-10
10
Unit
µA
µA
(V
CC
= 3.3V±0.3V, V
SS
= 0V, T
A
= 0 to +70
°C)
Parameter
Operating Current
Symbol
I
CC1
Test Conditions
Burst Length = 1, t
CLK
= min.
All Banks Active
CKE =V
IL
, t
CLK
= min.
All Banks Idle
CKE =V
IH
, t
CLK
= min.
All Banks Idle
CKE =V
IL
, t
CLK
= min.
Any Bank Active
CKE =V
IH
, t
CLK
= min.
Any Bank Active
t
CLK
= min.
t
CLK
= min., t
RC
= min.
Auto Refresh
CKE =V
IL
10ns
2268
76
348
108
428
2428
2908
60
Max.
12ns
2108
76
348
108
428
2108
2668
60
Unit
15ns
1948
76
348
108
428
1628
2428
60
mA
mA
mA
mA
mA
mA
mA
mA
Note
1, 2, 3
1, 2, 3
1, 2 , 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
Precharge Standby Current
I
CC2
Active Standby Current
I
CC3
Burst Mode Current
Refresh Current
Self Refresh Current
I
CC4
I
CC5
I
CC6
Notes:
1.
2.
3.
I
CC
depends on output load condition when the device is selected. I
CC
(max) is specified at the output open condition.
An initial pulse of 200µs is required after power-up followed by a minimum of eight Auto-Refresh-Cycles.
All currents are for 4 bank, 4K refresh SDRAMs.
C
orporate Headquarters:
P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: +44-1908 234030 • Fax: +44-1908-234191
Asia/Pacific:
Plot 18, Lrg Jelawat 4, Kawasan Perindustrian Seberang Jaya 13700, Prai, Penang, Malaysia • Tel: +604-3992909 • Fax: +604-3992903
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
