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MBRA60060CT

产品描述Rectifier Diode, Schottky, 1 Phase, 2 Element, 300A, 60V V(RRM), Silicon, MODULE-2
产品类别分立半导体    二极管   
文件大小808KB,共2页
制造商Daco Semiconductor Co Ltd
下载文档 详细参数 全文预览

MBRA60060CT概述

Rectifier Diode, Schottky, 1 Phase, 2 Element, 300A, 60V V(RRM), Silicon, MODULE-2

MBRA60060CT规格参数

参数名称属性值
厂商名称Daco Semiconductor Co Ltd
包装说明R-XUFM-X2
Reach Compliance Codeunknow
ECCN代码EAR99
应用GENERAL PURPOSE
外壳连接CATHODE
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.75 V
JESD-30 代码R-XUFM-X2
最大非重复峰值正向电流4000 A
元件数量2
相数1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流300 A
封装主体材料UNSPECIFIED
封装形状RECTANGULAR
封装形式FLANGE MOUNT
最大重复峰值反向电压60 V
最大反向电流1000 µA
表面贴装NO
技术SCHOTTKY
端子形式UNSPECIFIED
端子位置UPPER

MBRA60060CT文档预览

DACO SEMICONDUCTOR CO.,LTD
.
Features
High surge Capability
Types Up to 100V V
RRM
MBRA60020CT(R)
THRU
MBRA600100CT(R)
SCHOTTKY DIODE MODULE TYPES 600A
600Amp Recti er
20-100 Volts
HEAVY TWIN TOWER
A
R
Maximum Ratings
Operating Temperature: -55℃ to+150
Storage Temperature: -55℃ to+150
Q
N
G
W
B
Part Number
MBRA60020CT(R)
MBRA60030CT(R)
MBRA60035CT(R)
MBRA60040CT(R)
MBRA60045CT(R)
MBRA60060CT(R)
MBRA60080CT(R)
MBRA600100CT(R)
Maximum
Recurrent
Peak Reverse
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
Maximum
RMS Voltage
14V
21V
25V
28V
32V
42V
56V
70V
Maximum DC
Blocking
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
U
F
U
C
V
E
LUG
Teminal
Anode 1
LUG
Teminal
Anode 2
LUG
LUG
Teminal
Teminal
Cathode 1 Cathode 2
3
Baseplate
Common Cathode
3
Baseplate
R=Common Anode
Electrcal Characteristics @ 25℃ Unless Otherwise Specified
Average Forward
Current
(Per pkg)
Peak Forward Surge
(Per leg)
Current
Maximum
(Per leg)
20V~45V
Instantaneous
50V~60V
Forward Voltage
80V~100V
Maximum
NOTE (1)
Instantaneous
Reverse Current At
Rated DC Blocking
(Per leg)
Voltage
I
F(AV)
I
FSM
V
F
600A
4000A
0.70V
0.75V
0.84V
DIM
A
B
C
E
F
G
N
Q
R
Inches
Min
-----
1.06
-----
0.134
0.520
1.49
Max
3.64
1.067
0.740
0.14
0.527
BSC
1/4-20 UNC FULL
0.275
3.150
0.512
0.449
0.180
0.290
BSC
-----
0.472
0.195
6.99
80.01
13.0
11.4
4.57
Min
-----
26.9
-----
3.4
13.2
38.0
Millimeters
Max
92.3
27.1
18.8
3.55
13.4
BSC
T
C
=100
8.3ms , half sine
I
FM=300A;Tj=25
I
R
1 mA
10 mA
50 mA
0.28
/W
T
J
= 25
T
J
=100
T
J
=150
7.37
BSC
-----
12.0
4.95
Maximum Thermal
Resistance Junction
To Case
(Per leg)
R jc
U
V
W
NOTE :
(1)
Pulse Test: Pulse Width 300
μsec
,Duty<2%
WWW.dacosemi.com.tw
-1-
DACO SEMICONDUCTOR CO.,LTD.
MBRA60020CT(R)
THRU
MBRA600100CT(R)
Figure.1-Typical Forward Characteristics
360
Average Forward Recti ed Current-Ampere
Figure.2-Forward Derating Curve
1000
T
J
= 25
300
Instantaneous Forward Current-Ampere
Amp Per lge
600
400
300
200
100
60
MBRA60020CT
MBRA60030CT
MBRA60035CT
MBRA60040CT
MBRA60045CT
240
Per lge
Amp
180
120
60
MBRA60060CT
Single Phase,Half Wave
-60Hz Res istive or Inductive Load
0
0
30
60
90
Case Temperature -
120
150
180
10
6.0
4.0
2.0
1.0
MBRA60080CT
MBRA600100CT
0
0.2
0.4
Vo lts
0.6
0.8
1.0
1.2
100
60
40
20
10
6
4
2
Figure.4-Typical Reverse Characteristics
Instantaneous Forward Voltage -Volts
T j =150 C
m
A
T j =100 C
6000
Figupre.3-Peak Forward Surge Current
8.3ms Single Half
Sine Wave
JEDEC method T
J
=25
Instantaneous Reverse Leakage Current-
Peak Forward Surge Current-Ampere
m
A
5000
4000
3000
2000
1000
0
1
0.6
0.4
0.2
0.1
Amp
Per lge
T
J
=25
.06
.04
.02
1
2
4
6
8 10
20
40
60 80 100
.01
Cycles
Number Of Cycles At60Hz -Cycles
20
30
40
60
70
80
Volts
Revers Voltage - Volts(%)
50
90
100
www.dacosemi.com .tw
-2-

 
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