Preliminary
Data Sheet
PS9308L, PS9308L2
2.0 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 6-PIN SDIP PHOTOCOUPLER
R08DS0048EJ0200
Rev.2.00
Sep 27, 2013
DESCRIPTION
The PS9308L and PS9308L2 are optical coupled isolators containing a GaAlAs LED on the input side and a photo
diode, a signal processing circuit and a power output transistor on the output side on one chip.
The PS9308L and PS9308L2 are in 6-pin plastic SDIP (Shrink Dual In-line Package). The PS9308L2 has 8 mm
creepage distance. The mount area of 6-pin plastic SDIP is half size of 8-pin DIP.
The PS9308L and PS9308L2 are designed specifically for high common mode transient immunity (CMR) and high
switching speed. It is suitable for driving IGBTs and MOS FETs.
The PS9308L is lead bending type (Gull-wing) for surface mounting.
The PS9308L2 is lead bending type for long creepage distance (Gull-wing) for surface mount.
FEATURES
•
•
•
•
•
•
•
•
•
Long creepage distance (8 mm MIN.: PS9308L2)
Half size of 8-pin DIP
Peak output current (2.0 A MAX., 1.0 A MIN.)
High speed switching (t
PLH
,
t
PHL
= 0.25
μ
s MAX.)
UVLO (Under Voltage Lock Out) protection with hysteresis
High common mode transient immunity (CM
H
, CM
L
=
±25
kV/
μ
s MIN.)
Embossed tape product : PS9308L-E3, PS9308L2-E3 : 2 000 pcs/reel
Pb-Free product
Safety standards
•
UL approved: No. E72422
•
CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
•
SEMKO approved (EN 60065, EN 60950)
•
DIN EN60747-5-5 (VDE0884-5) approved (Option)
PIN CONNECTION
(Top View)
6
5
4
1. Anode
2. NC
3. Cathode
4. V
EE
5. V
O
6. V
CC
1
2
3
<R>
APPLICATIONS
•
IGBT, Power MOS FET Gate Driver
•
Industrial inverter
•
IH (Induction Heating)
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R08DS0048EJ0200 Rev.2.00
Sep 27, 2013
SHIELD
Page 1 of 20
PS9308L, PS9308L2
Chapter Title
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, unless otherwise specified)
Diode
Parameter
Forward Current
Peak Transient
Forward Current
(Pulse Width < 1
μ
s)
Reverse Voltage
Detector
High Level Peak
*1
Output Current
Symbol
I
F
I
F (TRAN)
Ratings
25
1.0
Unit
mA
A
V
R
I
OH (PEAK)
5
2.0
V
A
2.0
A
I
OL (PEAK)
Low Level Peak
*1
Output Current
Supply Voltage
(V
CC
−V
EE
)
0 to 35
V
Output Voltage
V
O
0 to V
CC
V
*2
Power Dissipation
P
C
250
mW
Isolation Voltage
*3
BV
5 000
Vr.m.s.
*4
Total Power Dissipation
P
T
300
mW
*5
Operating Frequency
f
50
kHz
Operating Ambient Temperature
T
A
−40
to +110
°C
Storage Temperature
T
stg
−55
to +125
°C
Notes: *1. Maximum pulse width = 10
μ
s, Maximum duty cycle = 0.2%
*2. Reduced to 4.8 mW/°C at T
A
= 70°C or more.
*3. AC voltage for 1 minute at T
A
= 25°C, RH = 60% between input and output.
Pins 1-3 shorted together, 4-6 shorted together.
*4. Reduced to 5.4 mW/°C at T
A
= 70°C or more.
*5. I
OH (PEAK)
≤
2.0 A (≤ 0.3
μ
s), I
OL (PEAK)
≤
2.0 A (≤ 0.3
μ
s)
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Forward Current (ON)
Forward Voltage (OFF)
Operating Ambient Temperature
Symbol
(V
CC
−V
EE
)
I
F (ON)
V
F (OFF)
T
A
MIN.
15
7
−2
−40
TYP.
10
MAX.
30
16
0.8
110
Unit
V
mA
V
°C
R08DS0048EJ0200 Rev.2.00
Sep 27, 2013
Page 5 of 20
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