TGF3020-SM
5W, 32V, 4 – 6 GHz, GaN RF Input-Matched Transistor
Applications
•
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•
•
•
Telemetry
C-band radar
Communications
Test instrumentation
Wideband amplifiers
5.8GHz ISM
Product Features
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•
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Frequency: 4.0 to 6.0 GHz
Output Power (P
3dB
): 6.8 W at 5 GHz
Linear Gain: 12.7 dB at 5 GHz
Typical PAE
3dB
: 59.6% at 5 GHz
Operating Voltage: 32 V
Low thermal resistance package
CW and Pulse capable
3 x 3 mm package
Functional Block Diagram
General Description
The TriQuint TGF3020-SM is a 5W (P
3dB
), 50Ω-input
matched discrete GaN on SiC HEMT which operates
from 4.0 to 6.0 GHz. The integrated input matching
network enables wideband gain and power performance,
while the output can be matched on board to optimize
power and efficiency for any region within the band.
The device is housed in an industry-standard 3 x 3 mm
surface mount QFN package.
Lead-free and ROHS compliant
Pin Configuration
Pin No.
10 - 11
2-3
Back side
Label
V
D
/ RF OUT
V
G
/ RF IN
Source
Ordering Information
Evaluation boards are available upon request.
Part
TGF3020-SM
TGF3020-SM-
EVB1
TGF3020-SM-
EVB2
ECCN
EAR99
EAR99
EAR99
Description
QFN Packaged Part
5.3 – 5.9 GHz EVB
4 – 6 GHz EVB
Datasheet: Rev A 09-26-14
© 2014 TriQuint
- 1 of 23 -
Disclaimer: Subject to change without notice
www.triquint.com
TGF3020-SM
5W, 32V, 4 – 6 GHz, GaN RF Input-Matched Transistor
Absolute Maximum Ratings
Parameter
Breakdown Voltage (BV
DG
)
Gate Voltage Range (V
G
)
Drain Current (I
D
)
Gate Current (I
G
)
Power Dissipation (P
D
)
RF Input Power, CW,
T = 25° (P
IN
)
C
Channel Temperature (T
CH
)
Storage Temperature
Recommended Operating Conditions
Parameter
1
Drain Voltage (V
D
)
Drain Quiescent Current (I
DQ
)
Peak Drain Current ( I
D
)
Gate Voltage (V
G
)
Channel Temperature (T
CH
)
Power Dissipation, CW (P
D
)
Power Dissipation, Pulse (P
D
)
2
1
Electrical
Value
100 V min.
-50 to 0 V
0.6 A
-1.25 to 2.1 mA
7.5 W
30 dBm
275 °
C
-40 to 150 °
C
Value
32 V (Typ.)
25 mA (Typ.)
326 mA (Typ.)
-2.7 V (Typ.)
225 ° (Max)
C
7.05 W (Max)
9.1 W (Max)
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device
at these conditions is not implied.
specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
2
100uS Pulse Width, 20% Duty Cycle
RF Characterization – Load Pull Performance at 4.0 GHz
Test conditions unless otherwise noted: T
A
= 25 ° V
D
= 32 V, I
DQ
= 25 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle
C,
Symbol Parameter
G
LIN
P
3dB
PAE
3dB
G
3dB
Linear Gain, Power Tuned
Output Power at 3 dB Gain Compression, Power
Tuned
Power-Added Efficiency at 3 dB Gain
Compression, Efficiency Tuned
Gain at 3 dB Compression, Power Tuned
Min
Typical
12.6
38.4
60.1
9.6
Max
Units
dB
dBm
%
dB
RF Characterization – Load Pull Performance at 4.4 GHz
Test conditions unless otherwise noted: T
A
= 25 ° V
D
= 32 V, I
DQ
= 25 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle
C,
Symbol Parameter
G
LIN
P
3dB
PAE
3dB
G
3dB
Linear Gain, Power Tuned
Output Power at 3 dB Gain Compression, Power
Tuned
Power-Added Efficiency at 3 dB Gain
Compression, Efficiency Tuned
Gain at 3 dB Compression, Power Tuned
Min
Typical
12.7
38.3
61.5
9.7
Max
Units
dB
dBm
%
dB
Datasheet: Rev A 09-26-14
© 2014 TriQuint
- 2 of 23 -
Disclaimer: Subject to change without notice
www.triquint.com
TGF3020-SM
5W, 32V, 4 – 6 GHz, GaN RF Input-Matched Transistor
RF Characterization – Load Pull Performance at 5 GHz
Test conditions unless otherwise noted: T
A
= 25 ° V
D
= 32 V, I
DQ
= 25 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle
C,
Symbol Parameter
G
LIN
P
3dB
PAE
3dB
G
3dB
Linear Gain, Power Tuned
Output Power at 3 dB Gain Compression, Power
Tuned
Power-Added Efficiency at 3 dB Gain
Compression, Efficiency Tuned
Gain at 3 dB Compression, Power Tuned
Min
Typical
12.7
38.3
59.6
9.7
Max
Units
dB
dBm
%
dB
RF Characterization – Load Pull Performance at 5.5 GHz
Test conditions unless otherwise noted: T
A
= 25 ° V
D
= 32 V, I
DQ
= 25 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle
C,
Symbol Parameter
G
LIN
P
3dB
PAE
3dB
G
3dB
Linear Gain, Power Tuned
Output Power at 3 dB Gain Compression, Power
Tuned
Power-Added Efficiency at 3 dB Gain
Compression, Efficiency Tuned
Gain at 3 dB Compression, Power Tuned
Min
Typical
13.3
38.2
59.0
10.3
Max
Units
dB
dBm
%
dB
Datasheet: Rev A 09-26-14
© 2014 TriQuint
- 3 of 23 -
Disclaimer: Subject to change without notice
www.triquint.com
TGF3020-SM
5W, 32V, 4 – 6 GHz, GaN RF Input-Matched Transistor
RF Characterization – 5.3 – 5.9 GHz EVB Performance at 5.4 GHz
Test conditions unless otherwise noted: T
A
= 25 ° V
D
= 32 V, I
DQ
= 25 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle
C,
Symbol Parameter
G
LIN
P
3dB
DE
3dB
G
3dB
Linear Gain
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Gain at 3 dB Compression
Min
Typical
11.7
5.7
53.1
8.7
Max
Units
dB
W
%
dB
RF Characterization – 4 – 6 GHz EVB Performance at 4.7 GHz
Test conditions unless otherwise noted: T
A
= 25 ° V
D
= 32 V, I
DQ
= 25 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle
C,
Symbol Parameter
G
LIN
P
3dB
DE
3dB
G
3dB
Linear Gain
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Gain at 3 dB Compression
Min
Typical
11.8
5.6
51.7
8.8
Max
Units
dB
W
%
dB
RF Characterization – Mismatch Ruggedness at 5.3 and 5.9 GHz
Test conditions unless otherwise noted: T
A
= 25 ° V
D
= 32 V, I
DQ
= 25 mA
C,
Driving input power is determined at 3dB Pulsed compression under matched condition at EVB output connector.
Symbol Parameter
VSWR
Impedance Mismatch Ruggedness
Typical
10:1
Datasheet: Rev A 09-26-14
© 2014 TriQuint
- 4 of 23 -
Disclaimer: Subject to change without notice
www.triquint.com
TGF3020-SM
5W, 32V, 4 – 6 GHz, GaN RF Input-Matched Transistor
Thermal and Reliability Information - CW
1
Parameter
Thermal Resistance (θ
JC
)
Channel Temperature (T
CH
)
Median Lifetime (T
M
)
Thermal Resistance (θ
JC
)
Channel Temperature (T
CH
)
Median Lifetime (T
M
)
Thermal Resistance (θ
JC
)
Channel Temperature (T
CH
)
Median Lifetime (T
M
)
Thermal Resistance (θ
JC
)
Channel Temperature (T
CH
)
Median Lifetime (T
M
)
Thermal Resistance (θ
JC
)
Channel Temperature (T
CH
)
Median Lifetime (T
M
)
Test Conditions
85 ° Case
C
1.26 W Pdiss, CW
85 ° Case
C
2.52 W Pdiss, CW
85 ° Case
C
3.78 W Pdiss, CW
85 ° Case
C
5.04 W Pdiss, CW
85 ° Case
C
6.30 W Pdiss, CW
Value
17.5
107
5.56E11
17.9
130
2.65E10
18.8
156
1.27E9
19.8
185
6.46E7
21.1
218
3.28E6
Units
ºC/W
°
C
Hrs
ºC/W
°
C
Hrs
ºC/W
°
C
Hrs
ºC/W
°
C
Hrs
ºC/W
°
C
Hrs
Notes:
1. Thermal resistance measured to bottom of package.
Thermal and Reliability Information - Pulsed
1
Parameter
Thermal Resistance (θ
JC
)
Channel Temperature (T
CH
)
Median Lifetime (T
M
)
Thermal Resistance (θ
JC
)
Channel Temperature (T
CH
)
Median Lifetime (T
M
)
Thermal Resistance (θ
JC
)
Channel Temperature (T
CH
)
Median Lifetime (T
M
)
Thermal Resistance (θ
JC
)
Channel Temperature (T
CH
)
Median Lifetime (T
M
)
Test Conditions
85 ° Case
C
7.6 W Pdiss, 100uS PW, 5%
85 ° Case
C
7.6 W Pdiss, 100uS PW, 10%
85 ° Case
C
7.6 W Pdiss, 100uS PW, 20%
85 ° Case
C
7.6 W Pdiss, 100uS PW, 50%
Value
15.0
199
1.69E7
15.4
202
1.30E7
16.1
207
8.44E6
18.0
222
2.33E6
Units
ºC/W
°
C
Hrs
ºC/W
°
C
Hrs
ºC/W
°
C
Hrs
ºC/W
°
C
Hrs
Notes:
1. Thermal resistance measured to bottom of package.
Datasheet: Rev A 09-26-14
© 2014 TriQuint
- 5 of 23 -
Disclaimer: Subject to change without notice
www.triquint.com
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