Standard SRAM, 256KX18, 8.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | Cypress(赛普拉斯) |
零件包装代码 | BGA |
包装说明 | 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119 |
针数 | 119 |
Reach Compliance Code | compli |
ECCN代码 | 3A991.B.2.A |
最长访问时间 | 8.5 ns |
其他特性 | FLOW-THROUGH ARCHITECTURE |
最大时钟频率 (fCLK) | 90 MHz |
I/O 类型 | COMMON |
JESD-30 代码 | R-PBGA-B119 |
长度 | 22 mm |
内存密度 | 4718592 bi |
内存集成电路类型 | STANDARD SRAM |
内存宽度 | 18 |
湿度敏感等级 | 1 |
功能数量 | 1 |
端子数量 | 119 |
字数 | 262144 words |
字数代码 | 256000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 256KX18 |
输出特性 | 3-STATE |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | BGA |
封装等效代码 | BGA119,7X17,50 |
封装形状 | RECTANGULAR |
封装形式 | GRID ARRAY |
并行/串行 | PARALLEL |
峰值回流温度(摄氏度) | 225 |
电源 | 2.5/3.3,3.3 V |
认证状态 | Not Qualified |
座面最大高度 | 2.4 mm |
最大待机电流 | 0.01 A |
最小待机电流 | 3.14 V |
最大压摆率 | 0.29 mA |
最大供电电压 (Vsup) | 3.63 V |
最小供电电压 (Vsup) | 3.135 V |
标称供电电压 (Vsup) | 3.3 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子形式 | BALL |
端子节距 | 1.27 mm |
端子位置 | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
宽度 | 14 mm |
GVT71256E18B-9 | CY7C1325A-100BGC | CY7C1325A-100AC | GVT71256E18T-7 | CY7C1325A-117AC | CY7C1325A-117BGC | GVT71256E18B-7 | GVT71256E18B-8 | |
---|---|---|---|---|---|---|---|---|
描述 | Standard SRAM, 256KX18, 8.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119 | Standard SRAM, 256KX18, 8ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119 | Standard SRAM, 256KX18, 8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | Standard SRAM, 256KX18, 7.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | Standard SRAM, 256KX18, 7.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | Standard SRAM, 256KX18, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119 | Standard SRAM, 256KX18, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119 | Standard SRAM, 256KX18, 8ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
零件包装代码 | BGA | BGA | QFP | QFP | QFP | BGA | BGA | BGA |
包装说明 | 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119 | 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119 | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119 | 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119 | 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119 |
针数 | 119 | 119 | 100 | 100 | 100 | 119 | 119 | 119 |
Reach Compliance Code | compli | compliant | not_compliant | compliant | not_compliant | compliant | compliant | compliant |
ECCN代码 | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
最长访问时间 | 8.5 ns | 8 ns | 8 ns | 7.5 ns | 7.5 ns | 7.5 ns | 7.5 ns | 8 ns |
其他特性 | FLOW-THROUGH ARCHITECTURE | FLOW-THROUGH ARCHITECTURE | FLOW-THROUGH ARCHITECTURE | FLOW-THROUGH ARCHITECTURE | FLOW-THROUGH ARCHITECTURE | FLOW-THROUGH ARCHITECTURE | FLOW-THROUGH ARCHITECTURE | FLOW-THROUGH ARCHITECTURE |
最大时钟频率 (fCLK) | 90 MHz | 100 MHz | 100 MHz | 117 MHz | 117 MHz | 117 MHz | 117 MHz | 100 MHz |
I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
JESD-30 代码 | R-PBGA-B119 | R-PBGA-B119 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 | R-PBGA-B119 | R-PBGA-B119 | R-PBGA-B119 |
长度 | 22 mm | 22 mm | 20 mm | 20 mm | 20 mm | 22 mm | 22 mm | 22 mm |
内存密度 | 4718592 bi | 4718592 bit | 4718592 bit | 4718592 bit | 4718592 bit | 4718592 bit | 4718592 bit | 4718592 bit |
内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
内存宽度 | 18 | 18 | 18 | 18 | 18 | 18 | 18 | 18 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 119 | 119 | 100 | 100 | 100 | 119 | 119 | 119 |
字数 | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words |
字数代码 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
组织 | 256KX18 | 256KX18 | 256KX18 | 256KX18 | 256KX18 | 256KX18 | 256KX18 | 256KX18 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | BGA | BGA | LQFP | LQFP | LQFP | BGA | BGA | BGA |
封装等效代码 | BGA119,7X17,50 | BGA119,7X17,50 | QFP100,.63X.87 | QFP100,.63X.87 | QFP100,.63X.87 | BGA119,7X17,50 | BGA119,7X17,50 | BGA119,7X17,50 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | GRID ARRAY | GRID ARRAY | FLATPACK, LOW PROFILE | FLATPACK, LOW PROFILE | FLATPACK, LOW PROFILE | GRID ARRAY | GRID ARRAY | GRID ARRAY |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
峰值回流温度(摄氏度) | 225 | NOT SPECIFIED | 225 | 225 | 225 | NOT SPECIFIED | 225 | 225 |
电源 | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 2.4 mm | 2.4 mm | 1.6 mm | 1.6 mm | 1.6 mm | 2.4 mm | 2.4 mm | 2.4 mm |
最大待机电流 | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A |
最小待机电流 | 3.14 V | 3.14 V | 3.14 V | 3.14 V | 3.14 V | 3.14 V | 3.14 V | 3.14 V |
最大压摆率 | 0.29 mA | 0.32 mA | 0.32 mA | 0.37 mA | 0.37 mA | 0.37 mA | 0.37 mA | 0.32 mA |
最大供电电压 (Vsup) | 3.63 V | 3.63 V | 3.63 V | 3.63 V | 3.63 V | 3.63 V | 3.63 V | 3.63 V |
最小供电电压 (Vsup) | 3.135 V | 3.135 V | 3.135 V | 3.135 V | 3.135 V | 3.135 V | 3.135 V | 3.135 V |
标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子形式 | BALL | BALL | GULL WING | GULL WING | GULL WING | BALL | BALL | BALL |
端子节距 | 1.27 mm | 1.27 mm | 0.65 mm | 0.65 mm | 0.65 mm | 1.27 mm | 1.27 mm | 1.27 mm |
端子位置 | BOTTOM | BOTTOM | QUAD | QUAD | QUAD | BOTTOM | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | 30 | 30 | 30 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
宽度 | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm |
厂商名称 | Cypress(赛普拉斯) | Cypress(赛普拉斯) | Cypress(赛普拉斯) | - | Cypress(赛普拉斯) | Cypress(赛普拉斯) | Cypress(赛普拉斯) | Cypress(赛普拉斯) |
湿度敏感等级 | 1 | - | 3 | 3 | 3 | - | 1 | 1 |
JESD-609代码 | - | e0 | e0 | e0 | e0 | e0 | - | - |
端子面层 | - | TIN LEAD | Tin/Lead (Sn/Pb) | TIN LEAD (800) | Tin/Lead (Sn/Pb) | TIN LEAD | - | - |
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