COMMUNICATIONS COMPONENTS
C-Band, L-Band, Pass Band Low Leakage PIN Photodiodes
EPM 6xx Series
Key Features
• Electro-optical
- Low back reflection
- High responsivity in L-band at 1625 nm (EPM 606)
• Packaging
- Single mode 900 µm fiber with or without a connector
- Single mode 250 µm fiber without a connector
- Small form factor (SFF) package available
Applications
• C- and L-Band monitoring
• High sensitivity monitoring
• EDFA and DWDM
• 40 and 10 Gb/s line monitoring
• 980 forward pump
• 1310 and 1550 PONs
The JDSU EPM 6xx Series PIN photodiodes are designed for optical network
monitoring applications. The photodiode die is fabricated with a proprietary
InGaAs process in our wafer fab and assembled into an hermetically-sealed
package with antireflective-coated lens. A stainless steel bushing is used to actively
couple the fiber to the package.
The fiber is reinforced with a rubber boot, which relieves fiber bending stresses.
EPM 6xx Series photodiodes can be produced with or without a variety of
industry standard connectors. They are also available with mounting brackets,
allowing both vertical panel and horizontal flush-to-board mounting.
Low leakage versions (EPM 605LL and EPM 606LL) of the EPM 605 and EPM 606
are available with the same features, connectors, and brackets.
Besides, we also offer the small form factor (SFF) packages (EPM635 and
EPM635-75) that are designed for the SFF applications.
NORTH AMERICA
:
800 498-JDSU (5378)
WORLDWIDE
:
+800 5378-JDSU
WEBSITE
:
www.jdsu.com
C-BAND, L-BAND, PASS BAND
LOW LEAKAGE PIN PHOTODIODES
2
Application Preference
Application/Product
C-band
C-band, high sensitivity
L-band
L-band, low sensitivity
1310 band
EDFA
DWDM
40 Gb and 10 Gb line monitors
980 forward pump
1310/1550 PON networks
1480 pump monitors
EPM 605
EPM 605LL
EPM 606
EPM 606LL
EPM 613
EPM 650
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Preference
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Strong Preference
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Typical Spectral Response (23°C)
Dark Current vs. Reverse Bias
1E-07
1.0
0.8
1E-08
Responsivity (A/W)
0.6
Dark Current (A)
1E-09
0.4
1E-10
85˚C
65˚C
45˚C
25˚C
0.2
0.0
1E-11
800
1000
1200
1400
1600
1800
0
5
10
15
20
25
Wavelength (nm)
Reverse Voltage (V)
C-BAND, L-BAND, PASS BAND
LOW LEAKAGE PIN PHOTODIODES
3
Capacitance vs. Reverse Bias (23 °C) (EPM 605/606)
Optical Response Nonlinearity (Typical, -5 V bias)
1.4
1.2
1.0
6%
4%
Capacitance (pF)
Nonlinearity (%)
2%
0%
-2%
-4%
-6%
-8%
-10%
0.8
0.6
0.4
0.2
0.0
0
2
4
6
8
10
12
0.01
0.1
1
10
100
Reverse Voltage (V)
Input Optical Power (mW)
PDL vs. Temperature (EPM 613)
0.12
Responsivity vs. Temperature (EPM 613)
0.7
0.1
0.66
Responsivity (A/W)
PDL (dB)
0.08
0.62
0.06
EPM 613
0.58
EPM 613 Device 1
Power = 1 mW
0.04
λ
= 980 nm
EPM 613
0.54
Bias = -5V
λ
= 980 nm
EPM 613 Device 2
EPM 613 Device 3
0.02
20
25
30
35
40
45
50
55
60
65
0.5
0
10
20
30
40
50
60
70
80
90
Temperature (˚C)
Temperature (˚C)
PDL vs. Temperature (EPM 606)
p
0.1
Responsivity vs. Temperature (EPM 606)
1.2
0.08
1
0.06
Responsivity (A/W)
PDL (mdB)
0.8
0.04
Sample 1
0.6
Sample 1
Sample 2
Sample 3
0.02
λ
= 1620 nm
Sample 2
0.4
λ
= 1620 nm, V
b
= -5V, P
in
= 0.5 mW
Sample 4
0
0
10
20
30
40
50
60
70
0.2
-40
-20
0
20
40
60
80
Temperature (˚C)
Temperature (˚C)
C-BAND, L-BAND, PASS BAND
LOW LEAKAGE PIN PHOTODIODES
4
Responsivity vs. Wavelength, Temperature (EPM 605)
1
0.1
0.99
0.095
PDL vs. Wavelength, Temperature (EPM 605)
Responsivity (A/W)
0.98
0.09
0.97
0.96
PDL (dB)
15˚C
23˚C
0.085
0.08
0.95
0.94
0.075
0.07
15˚C
23˚C
65˚C
0.93
0.92
1525
1530
65˚C
0.065
0.06
1535
1540
1535
1540
1545
1550
1555
1560
1565
1545
1550
1555
1560
1565
Wavelength (nm)
Wavelength (nm)
PDL vs. Temperature (EPM 605)
0.08
Responsivity vs. Temperature (EPM 605)
1
0.07
0.06
0.05
0.04
0.96
Responsivity (A/W)
PDL (dB)
0.92
0.03
0.02
λ
= 1550 nm
λ
= 1310 nm
EPM 605 (1310 nm)
EPM 605 (1310 nm)
EPM 605 (1550 nm)
EPM 605 (1550 nm)
0.88
Sample 5
Sample 6
Sample 7
0.84
λ
= 1550 nm, V
b
= -5V, P
in
= 0.5 mW
0.01
0
20
25
30
35
40
45
50
0.8
55
60
65
70
-40
-20
0
20
40
60
80
Temperature (˚C)
Temperature (˚C)
Optical Power Linearity (EPM 605)
1.10
1.06
1.02
λ
op
= 1550 nm
Optical Power Linearity (EPM 650)
1.10
1.00
Responsivity (A/W)
Responsivity (A/W)
0.98
0.94
0.90
0.86
0.82
0.78
0.74
0.70
0
2
4
6
8
10
12
14
16
18
20
Bias = -5.0V
Bias = -3.3V
Bias = 0.0V
Responsivity = 1.02 A/W
0.90
λ
op
= 1550 nm
0.80
0.70
Bias = -5.0V
0.60
Bias = -3.3V
Bias = 0.0V
0.50
Responsivity = 1.02 A/W
0.40
0
2
4
6
8
10
12
14
Optical Power (mW)
Optical Power (mW)
C-BAND, L-BAND, PASS BAND
LOW LEAKAGE PIN PHOTODIODES
5
Equivalent Circuit for EPM 6xx Series
R
s
1.5 nH
0.50 pF
5 nH
C
p
0.13 pF
1 nH
0.50 pF
CASE
5 nH
Model
EPM 605
EPM 606
EPM 613
EPM 650
EPM 635
EPM 635-75
Rs
5
Ω
5
Ω
5
Ω
6
Ω
5
Ω
5
Ω
Cp
0.55 pF
0.55 pF
0.75 pF
1.00 pF
6.00 pF
0.90 pF
Dimensions Diagram
(Specifications in mm unless otherwise noted.)
EPM 6xx with Dual Mount Bracket
EPM 6xx without Dual Mount Bracket
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