140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF544
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
•
•
•
•
Silicon NPN, high Frequency, high breakdown Transistor
Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz
High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
High FT - 1400 MHz
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other
applications requiring high breakdown characteristics.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Value
70
100
3.0
400
Unit
Vdc
Vdc
Vdc
mA
Thermal Data
P
D
Total Device Dissipation @ T
A
= 25ºC
Derate above 25ºC
3.5
20
Watts
mW/ ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MRF544
ELECTRICAL SPECIFICATIONS (Tcase = 25
°
C)
STATIC
(off)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
ICES
Test Conditions
Min.
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC= 100
µAdc,
IE=0)
Emitter-Base Breakdown Voltage
(IE = 100
µAdc,
IC = 0)
Collector Cutoff Current
(VCE = 80 Vdc, IE = 0 Vdc)
Collector Cutoff Current
(VCE = 80 Vdc, IE = 0 Vdc)
70
100
3.0
-
-
Value
Typ.
-
-
-
-
1.0
Max.
-
-
-
20
100
Unit
Vdc
Vdc
Vdc
µA
µA
(on)
HFE
DC Current Gain
(IC = 50 mAdc, VCE = 6.0 Vdc)
15
-
-
-
DYNAMIC
Symbol
Test Conditions
Min.
COB
CIB
f
T
Output Capacitance
(VCB = 10Vdc, IE=0, f=1 MHz)
Input Capacitance
(VEB = 3Vdc, IE=0, f=1 MHz)
Current-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 250 MHz)
-
-
1000
Value
Typ.
2.5
6.1
1500
Max.
-
-
-
Unit
pF
pF
MHz
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MRF544
FUNCTIONAL
Symbol
Test Conditions
Min.
Maximum Unilateral Gain
Maximum Available Gain
Insertion Gain
IC = 50 mAdc, VCE = 25Vdc,
f = 200 MHz
IC = 50 mAdc, VCE = 25Vdc,
f = 200 MHz
IC = 50 mAdc, VCE = 25Vdc,
f = 200 MHz
Value
Typ.
13.5
13.5
12.7
Max.
-
-
-
Unit
dB
dB
dB
G
U max
-
-
11.7
MAG
2
|S
21
|
Table 1. Common Emitter S-Parameters, @ VCE = 25 V, IC = 50 mA
f
S11
S21
S12
S22
(MHz)
100
200
300
400
500
600
700
800
900
1000
|S11|
0.221
0.219
0.250
0.329
0.338
0.348
0.371
0.374
0.402
0.438
∠φ
-143
-108
-72
-34
9
51
94
140
-170
-126
|S21|
8.54
4.36
2.98
2.39
2.11
1.83
1.61
1.44
1.45
1.56
∠φ
97
87
79
72
70
65
61
59
63
64
|S12|
0.047
0.091
0.141
0.178
0.237
0.292
0.35
0.383
0.428
0.503
∠φ
82
87
87
84
87
86
86
85
88
86
|S22|
0.508
0.413
0.406
0.445
0.409
0.412
0.411
0.413
0.386
0.405
∠φ
14
49
82
108
140
176
-147
-112
-78
-42
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MRF544
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
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