EPA480B/EPA480BV
UPDATED: 09/27/2007
High Efficiency Heterojunction Power FET
•
•
•
•
•
•
•
+35.5dBm TYPICAL OUTPUT POWER
7.5dB TYPICAL POWER GAIN FOR EPA480B AND
9.0dB FOR EPA480BV AT 12GHz
0.3X 4800 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
EPA480BV WITH VIA HOLE SOURCE GROUNDING
Idss SORTED IN 120mA PER BIN RANGE
Chip Thickness: 45
±
13 microns
All Dimensions In Microns
No Via Hole For EPA480B
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
P
1dB
G
1dB
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETERS/TEST CONDITIONS
MIN
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Saturated Drain Current
Transconductance
Pinch-off Voltage
f=12GHz
f=18GHz
f=12GHz
34.0
6.0
EPA480B
TYP
35.5
7.5
EPA480BV
MIN
34.0
7.5
UNIT
MAX
TYP
35.5
35.5
9.0
MAX
dBm
dB
%
1880
mA
mS
-2.5
V
V
V
o
f=12GHz
880
960
40
1440
1520
-1.0
-13
-7
-15
-14
10
-2.5
-13
-7
1880
880
960
45
1440
1520
-1.0
-15
-14
8
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=14mA
Igd=4.8mA
Igs=4.8mA
Drain Breakdown Voltage
Source Breakdown Voltage
Thermal Resistance (Au-Sn Eutectic Attach)
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
Vds
Vgs
Ids
Igsf
Pin
Tch
stg
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
EPA480B
ABSOLUTE
1
12V
-8V
Idss
240mA
33dBm
175 C
-65/175 C
o
o
EPA480BV
ABSOLUTE
1
12V
-8V
Idss
240mA
33dBm
175 C
-65/175 C
17W
o
o
CONTINUOUS
2
8V
-3V
1.4A
40mA
@ 3dB Compression
150 C
-65/150 C
o
o
CONTINUOUS
2
8V
-3V
1.75A
40mA
@ 3dB Compression
150 C
-65/150 C
14W
o
o
Pt
Total Power Dissipation
14W
11W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Page 1 of 2
September 2007
EPA480B/EPA480BV
UPDATED: 09/27/2007
High Efficiency Heterojunction Power FET
S-PARAMETERS
EPA480B
8V, 1/2 Idss
FREQ
(GHz)
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
26.0
--- S11 ---
MAG
ANG
0.867
-152.8
0.921
-168.1
0.950
-177.0
0.950
179.6
0.959
172.9
0.959
171.5
0.961
170.9
0.952
170.5
0.948
170.2
0.952
169.4
0.958
169.2
0.968
168.5
0.946
163.9
0.945
158.4
0.958
157.6
0.935
155.7
1.304
150.7
1.265
145.2
1.116
142.9
--- S21 ---
MAG
ANG
7.224
106.4
3.791
87.7
2.900
78.1
2.175
71.6
1.718
65.2
1.440
59.7
1.235
54.5
1.074
49.4
0.942
44.3
0.812
41.8
0.743
35.5
0.667
31.8
0.539
24.5
0.450
15.7
0.391
9.0
0.352
1.8
0.319
-0.2
0.274
-12.4
0.238
-20.4
--- S12 ---
MAG
ANG
0.014
11.8
0.015
16.8
0.015
26.6
0.017
30.4
0.015
43.3
0.017
49.3
0.020
47.9
0.023
48.5
0.023
48.5
0.024
57.4
0.028
52.8
0.004
-8.8
0.029
52.9
0.031
48.5
0.030
45.0
0.040
48.2
0.046
49.0
0.049
39.8
0.053
39.2
--- S22 ---
MAG
ANG
0.644 -177.4
0.664 -176.3
0.680 -175.8
0.691 -176.0
0.703 -172.9
0.709 -174.7
0.721 -176.5
0.742 -179.7
0.760 178.1
0.769 -178.5
0.759 175.6
0.775 175.6
0.821 176.2
0.850 175.8
0.845 173.5
0.865 167.2
0.677 163.8
0.652 163.5
0.692 162.8
EPA480BV
8V, 1/2 Idss
FREQ
(GHz)
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
26.0
--- S11 ---
MAG
ANG
0.941 -156.9
0.948 -170.0
0.952 -176.1
0.951 -179.7
0.956
176.7
0.962
175.6
0.965
176.1
0.966
177.9
0.972
179.6
0.967 -179.0
0.969 -177.8
0.969 -177.3
0.965
178.4
0.970
169.2
0.972
158.8
0.979
152.1
0.969
163.2
0.978
158.9
0.977
158.9
--- S21 ---
MAG
ANG
8.989
96.7
4.575
84.1
3.030
75.8
2.237
68.8
1.718
63.1
1.390
57.8
1.163
53.3
0.992
49.3
0.863
45.6
0.760
42.0
0.682
38.8
0.613
35.3
0.511
27.6
0.438
18.0
0.367
7.9
0.299
-1.2
0.233
-6.9
0.192
-10.9
0.169
-11.6
--- S12 ---
MAG
ANG
0.013
18.0
0.014
15.0
0.013
14.9
0.013
18.3
0.013
22.1
0.012
27.2
0.012
31.5
0.012
37.6
0.012
41.0
0.011
45.2
0.012
47.5
0.012
51.2
0.014
52.8
0.014
46.9
0.013
37.8
0.013
41.1
0.014
32.2
0.015
39.3
0.018
44.7
--- S22 ---
MAG
ANG
0.666 -174.6
0.675 -176.9
0.686 -176.2
0.699 -175.1
0.722 -172.7
0.736 -171.5
0.755 -171.0
0.772 -171.9
0.789 -172.3
0.805 -172.8
0.816 -173.1
0.818 -173.6
0.827 -172.3
0.854 -170.5
0.870 -170.6
0.877 -172.8
0.922
171.4
0.923
175.7
0.934
180.0
Note: The data included 0.7 mils diameter Au bonding wires; 4 gate wires, 15 mils each; 4 drain wires, 20 mils each;
10 source wires, 7 mils each; no source wires for EPA480BV.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Page 2 of 2
September 2007
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