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EPA080AV

产品描述High Efficiency Heterojunction Power FET
文件大小53KB,共2页
制造商Excelics [Excelics Semiconductor, Inc.]
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EPA080AV概述

High Efficiency Heterojunction Power FET

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Excelics
EPA080A/EPA080AV
DATA SHEET
High Efficiency Heterojunction Power FET
+27.5dBm TYPICAL OUTPUT POWER
9.5dB TYPICAL POWER GAIN FOR EPA080A AND
10.5dB FOR EPA080AV AT 18GHz
0.3 X 800 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
EPA080AV WITH VIA HOLE SOURCE GROUNDING
Idss SORTED IN 20mA PER BIN RANGE
Chip Thickness: 75
±
20 microns
All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
Output Power at 1dB Compression
P
1dB
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
G
1dB
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
Vds=8V, Ids=50% Idss
Saturated Drain Current
Transconductance
Pinch-off Voltage
f=12GHz
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=2.0mA
-11
-7
130
160
45
240
260
-1.0
-15
-14
55
-2.5
320
f=12GHz
f=18GHz
f=12GHz
f=18GHz
10.5
26
:
Via Hole
No Via Hole For EPA080A
EPA080AV
MAX
MIN
26
TYP
27.5
27.5
11.0
13.0
10.5
dB
dBm
MAX
UNIT
EPA080A
TYP
27.5
27.5
12.5
9.5
46
130
160
240
260
-1.0
-11
-7
-15
-14
40
o
%
320
mA
mS
-2.5
V
V
V
C/W
Drain Breakdown Voltage Igd=1.0mA
Source Breakdown Voltage Igs=1.0mA
Thermal Resistance (Au-Sn Eutectic Attach)
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
EPA080A
ABSOLUTE
1
CONTINUOUS
2
8V
-3V
260mA
7mA
@ 3dB
Compression
150
o
C
-65/150
o
C
2.1W
12V
-8V
Idss
40mA
25dBm
175
o
C
-65/175
o
C
2.5W
12V
-8V
Idss
40mA
25dBm
175
o
C
EPA080AV
ABSOLUTE
1
CONTINUOUS
2
8V
-3V
Idss
7mA
@ 3dB
Compression
150
o
C
-65/150
o
C
2.8W
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
-65/175
o
C
3.4W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

EPA080AV相似产品对比

EPA080AV EPA080A
描述 High Efficiency Heterojunction Power FET High Efficiency Heterojunction Power FET

 
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