Excelics
DATA SHEET
Features
•
NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
•
+26dBm TYPICAL OUTPUT POWER
•
9.0dB TYPICAL POWER GAIN AT 12 GHZ
•
0.4 dB TYPICAL NOISE FIGURE AT 2GHz
•
20 dB TYPICAL ASSOCIATED GAIN AT 2 GHz
•
0.3 X 600 MICRON RECESSED “MUSHROOM” GATE
•
Si
3
N
4
PASSIVATION
•
ADVANCED EPITAXIAL HETEROJUNCTION PROFILE
PROVIDES EXTRA HIGH POWER EFFICIENCY,
AND HIGH RELIABILITY
EPA060B-70
High Efficiency Heterojunction Power FET
'
0LQ
6
6
*
Applications
•
High Dynamic Range LNA
•
DC to 18 GHz
All Dimensions In mils.
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
P
1dB
G
1dB
PAE
IP3
NF
G
A
Idss
Gm
Vp
BVgd
BVgs
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f=2GHz
Vds=6V, Ids=50% Idss
f=12GHz
Gain at 1dB Compression
f=2GHz
Vds=6V, Ids=50% Idss
f=12GHz
Power Added Efficiency at 1dB Compression
f=2GHz
Vds=6V, Ids=50% Idss
f=12GHz
+5dBm P
OUT
/Tone (5V/50mA)
f=2GHz
(5V/90mA)
Noise Figure (5V/50mA)
f=2GHz
(5V/90mA)
Associated Gain (5V/50mA)
f=2GHz
(5V/90mA)
Saturated Drain Current Vds=3V, Vgs=0V
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Ids=2.0mA
-10
-6
MIN
24.0
17.0
7.0
TYP
26.0
25.5
19.0
9.0
55
45
28
31
0.4
0.6
20.0
20.0
180
190
-1.0
-15
-14
175
*
o
MAX
UNIT
dBm
dB
%
dBm
dB
dB
110
120
250
mA
mS
-2.5
V
V
V
C/W
Drain Breakdown Voltage Igd=1.0mA
Source Breakdown Voltage Igs=1.0mA
Thermal Resistance
Rth
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
ABSOLUTE
1
10V
-6V
Idss
30mA
23dBm
175 C
-65/175
o
C
o
CONTINUOUS
2
6V
-3V
110mA
5mA
@ 3dB Compression
150
o
C
-65/150
o
C
650mW
Total Power Dissipation
780mW
Pt
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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