EPA030C/EPA030CV
UPDATED 10/24/2006
High Efficiency Heterojunction Power FET
FEATURES
•
•
•
•
•
•
•
+23dBm TYPICAL OUTPUT POWER
11dB TYPICAL POWER GAIN FOR EPA030C
AND 12.0dB FOR EPA030CV AT 18GHz
0.3 X 300 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION AND PLATED HEAT SINK
ADVANCED EPITAXIAL DOPING PROFILE PROVIDES
HIGH POWER EFFICIENCY AND RELIABILITY
EPA030CV WITH VIA HOLE SOURCE GROUNDING
Idss SORTED IN 10mA PER BIN RANGE
Chip Thickness: 75
±
13 microns (EPA030C)
Chip Thickness: 85
±
15 microns (EPA030CV)
:
Via Hole
No Via Hole For EPA030C
ALL DIMENSIONS IN MICRONS
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
V
DS
= 8V, I
DS
≈
50% I
DSS
f = 12GHz
f = 18GHz
Caution! ESD sensitive device
.
EPA030C
MIN
TYP
MAX
21.0
23.0
23.0
12.0
13.5
11.0
45
50
60
-13
-7
90
95
-1.0
-15
-14
125
-2.5
-13
-7
130
50
60
EPA030CV
MIN
21.0
12.5
TYP
23.0
23.0
14.0
12.0
46
90
95
-1.0
-15
-14
95
o
UNIT
MAX
dBm
dB
%
130
mA
mS
-2.5
V
V
V
C/W
P
1dB
G
1dB
PAE
I
DSS
G
M
V
P
BV
GD
BV
GS
R
th
Gain at 1dB Compression
f = 12GHz
f = 18GHz
V
DS
= 8V, I
DS
≈
50% I
DSS
Power Added Efficiency at 1dB Compression
f = 12GHz
V
DS
= 8V, I
DS
≈
50% I
DSS
Saturated Drain Current
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage
Source Breakdown Voltage
V
DS
= 3V, V
GS
= 0V
V
DS
= 3V, V
GS
= 0V
V
DS
= 3 V, I
DS
= 1.0 mA
I
GD
= 1.0mA
I
GS
= 1.0mA
Thermal Resistance(Au-Sn Eutectic Attach)
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
EPA030C
1
EPA030CV
ABSOLUTE
1
10V
-5V
1.4mA
-0.2mA
20dBm
175 C
-65/175 C
1.5W
o
o
CONTINUOUS
2
8V
-3V
0.5mA
-0.1mA
@ 3dB Compression
175 C
-65/175 C
1.1W
o
o
CONTINUOUS
2
8V
-3V
0.5mA
-0.1mA
@ 3dB Compression
175 C
-65/175 C
1.5W
o
o
V
DS
V
GS
Igf
Igr
Pin
Tch
Tstg
Pt
Note:
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
10V
-5V
1.4mA
-0.2mA
20dBm
175 C
-65/175 C
1.1W
o
o
1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 2
Revised October 2006
EPA030C/EPA030CV
UPDATED 10/24/2006
High Efficiency Heterojunction Power FET
S-PARAMETERS
EPA030C 8V, ½ Idss
FREQ
(GHz)
1.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
--- S11 ---
MAG ANG
0.975 -23.9
0.951 -46.7
0.883 -85.5
0.840 -114.7
0.814 -136.9
0.801 -154.1
0.797 -169.5
0.791 175.9
0.800 160.9
0.816 146.4
0.832 133.9
--- S21 ---
MAG ANG
7.888 162.4
7.419 147.5
6.169 121.3
4.993 100.9
4.125 84.2
3.495 70.1
3.041 56.7
2.700 43.7
2.425 30.4
2.155 17.0
1.913 4.3
--- S12 ---
MAG ANG
0.017 76.0
0.032 63.5
0.053 44.0
0.063 30.0
0.067 19.6
0.068 11.2
0.067 4.5
0.068 -1.9
0.069 -7.5
0.070 -12.1
0.071 -17.8
--- S22 ---
MAG ANG
0.750 -9.3
0.726 -18.3
0.643 -32.0
0.577 -41.6
0.535 -49.6
0.504 -57.1
0.479 -65.6
0.453 -75.2
0.434 -86.1
0.411 -98.4
0.400 -111.3
FREQ
(GHz)
21.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
--- S11 ---
MAG ANG
0.850 130.8
0.854 128.3
0.858 123.8
0.857 120.7
0.860 116.0
0.861 108.2
0.871 98.2
0.895 88.7
0.952 81.3
1.015 74.8
1.002 70.1
--- S21 ---
MAG ANG
1.761 -0.7
1.647 -5.9
1.466 -16.0
1.336 -25.3
1.241 -34.9
1.160 -45.6
1.071 -56.8
0.959 -68.0
0.858 -79.0
0.765 -91.0
0.650 -103.1
--- S12 ---
MAG ANG
0.069 -18.3
0.068 -18.6
0.067 -19.4
0.067 -16.9
0.070 -17.2
0.073 -19.5
0.072 -23.7
0.068 -28.5
0.072 -36.4
0.073 -51.4
0.072 -70.2
--- S22 ---
MAG ANG
0.404 -121.6
0.416 -129.4
0.449 -142.5
0.489 -153.1
0.515 -162.6
0.533 -173.0
0.552 175.1
0.579 161.5
0.642 146.1
0.702 130.2
0.725 119.1
S-PARAMETERS
EPA030CV 8V, ½ Idss
FREQ
(GHz)
1.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
--- S11 ---
MAG ANG
0.988 -25.7
0.959 -49.8
0.888 -91.2
0.837 -125.9
0.834 -145.7
0.829 -162.2
0.834 176.4
0.847 162.9
0.861 150.4
0.869 146.0
0.867 136.7
--- S21 ---
MAG ANG
7.512 161.8
7.041 146.0
5.765 118.4
4.662 96.0
3.804 80.1
3.181 65.7
2.692 50.1
2.305 36.9
1.987 23.9
1.782 12.9
1.590 1.0
--- S12 ---
MAG ANG
0.018 75.1
0.034 62.8
0.054 40.8
0.064 25.3
0.067 15.8
0.068 6.8
0.068 -2.3
0.065 -8.7
0.065 -14.2
0.068 -18.3
0.069 -23.3
--- S22 ---
MAG ANG
0.778 -9.1
0.748 -17.5
0.666 -30.0
0.599 -38.2
0.545 -43.7
0.496 -50.1
0.466 -58.5
0.436 -69.7
0.432 -82.3
0.418 -98.3
0.426 -110.4
FREQ
(GHz)
21.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
--- S11 ---
MAG ANG
0.869 130.7
0.875 127.1
0.891 120.3
0.899 114.0
0.905 109.4
0.906 104.4
0.909 100.5
0.929 96.5
0.967 93.1
0.985 88.7
0.986 85.8
--- S21 ---
MAG ANG
1.524 -5.5
1.428 -11.3
1.260 -22.6
1.103 -33.8
0.955 -44.4
0.841 -55.7
0.735 -66.9
0.647 -77.2
0.604 -85.6
0.559 -96.0
0.506 -106.2
--- S12 ---
MAG ANG
0.069 -26.1
0.069 -27.6
0.066 -30.9
0.063 -34.5
0.061 -35.8
0.057 -42.1
0.054 -50.6
0.051 -54.3
0.051 -61.8
0.063 -75.7
0.072 -93.8
--- S22 ---
MAG ANG
0.425 -115.0
0.430 -122.2
0.444 -137.9
0.470 -153.9
0.505 -169.2
0.534 175.4
0.569 161.2
0.612 149.5
0.684 140.0
0.726 130.9
0.757 123.9
Note: The data included 0.7 mil diameter Au bonding wires; 1gate wire, 15 mils each; 1 drain wire, 20 mils each;
4 source wires, 7 mils each; no source wires for EPA030CV.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 2 of 2
Revised October 2006
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