Excelics
PRELIMINARY DATA SHEET
EPA030B
High Performance Heterojunction Dual-Gate FET
•
•
•
•
•
•
•
+18.0dBm TYPICAL OUTPUT POWER
19.5dB TYPICAL POWER GAIN AT 12GHz
0.3 X 300 MICRON RECESSED “MUSHROOM”
DUAL GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING
PROFILE PROVIDES EXTRA HIGH PERFORMANCE
AND HIGH RELIABILITY
MIXER, SWITCH, AGC AND TEMPERATURE
COMPENSATION APPLICATIONS
Idss SORTED IN 5mA PER BIN RANGE
Chip Thickness: 75
±
13 microns
All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
P
1dB
G
1dB
NF
Ga
Idss
Gm
Vp1
Vp2
BVg2d
BVg1s
Rth
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
Vds=6V, Ids=50% Idss, Vg2s=0V
Gain at 1dB Compression
Vds=6V, Ids=50% Idss, Vg2s=0V
Noise Figure
Vds=3V, Ids=15mA, Vg2s=0V
Associated Gain
Vds=3V, Ids=15mA, Vg2s=0V
Saturated Drain Current
Transconductance
Vds=3V, Vg1s=-0.5V, Vg2s=0V
Pinch-off Voltage
Pinch-off Voltage
Vds=3V, Ids=1.0mA, Vg2s=0V
Vds=3V, Ids=1.0mA, Vg1s=0V
-10
-6
f=12GHz
f=12GHz
f=12GHz
f=12GHz
30
40
MIN
15.0
17.5
TYP
18.0
19.5
1.2
17.5
80
70
-1.5
-1.5
-14
-12
125
o
MAX
UNIT
dBm
dB
dB
dB
Vds=3V, Vg1s=Vg2s=0V
115
mA
mS
-3.5
-3.5
V
V
V
V
C/W
Gate 2 to Drain Breakdown Voltage
Ig2d=1.0mA, Gate 1 Open
Gate 1 to Source Breakdown Voltage
Ig1s=1.0mA, Gate 2 Open
Thermal Resistance (Au-Sn Eutectic Attach)
Excelics Semiconductor, Inc., 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site:
www.excelics.com
EPA030B
PRELIMINARY DATA SHEET
High Performance Heterojunction Dual-Gate FET
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Drain-Source Voltage
10V
7V
Vds
Gate-Source Voltage
-6V
-3.5V
Vgs
Drain Current
Idss
Idss
Ids
Forward Gate Current
15mA
2.5mA
Igsf
Input Power
15dBm
@3dB Compression
Pin
o
Channel Temperature
175 C
150
o
C
Tch
Storage Temperature
-65/175
o
C
-65/150
o
C
Tstg
Total Power Dissipation
1.1W
900mW
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
S-PARAMETERS
6V, 1/2 Idss, Vg2s=0V
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.987 -15.5 9.119 165.4 0.006 84.4 0.941 -6.4
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
Note:
0.972 -30.0 8.833 152.3 0.011 67.5 0.930 -12.8
0.943 -43.4 8.447 140.3 0.015 63.7 0.915 -18.5
0.917 -56.0 8.042 128.6 0.019 55.8 0.901 -23.4
0.871 -70.3 7.817 116.2 0.021 47.0 0.878 -28.6
0.837 -81.6 7.430 106.1 0.023 42.9 0.866 -32.0
0.811 -93.0 7.126
0.783 -104.6 6.898
0.761 -116.8 6.662
0.741 -128.5 6.456
0.739 -140.3 6.281
0.740 -151.2 6.090
0.748 -161.4 5.883
0.763 -170.1 5.692
0.783 -177.9 5.515
0.798 175.1 5.279
0.812 169.0 5.034
96.2
86.4
76.4
66.4
56.1
45.8
35.3
24.9
14.0
3.1
-7.4
0.024 39.3 0.853 -35.5
0.025 32.1 0.839 -38.9
0.024 25.0 0.825 -42.7
0.023 21.8 0.814 -46.8
0.022 16.8 0.813 -51.9
0.020 11.3 0.812 -57.7
0.019
0.016
0.014
6.5
6.1
9.1
0.820 -64.8
0.840 -72.3
0.875 -81.1
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
21.0 0.869 142.8 4.727 -49.2 0.018 55.4 1.148 -122.2
22.0
23.0
24.0
25.0
26.0
27.0
28.0
29.0
30.0
31.0
32.0
33.0
34.0
35.0
36.0
37.0
38.0
39.0
40.0
0.895 135.8 4.661 -61.4 0.023
0.919 129.8 4.615 -74.5 0.030
0.944 125.5 4.605 -89.6 0.039
0.978 122.1 4.514 -107.3 0.048
0.994 117.6 4.183 -125.4 0.058
1.005 110.7 3.649 -142.2 0.062
1.014 103.8 3.103 -158.4 0.064
1.023 100.4 2.569 -172.7 0.064
1.016
1.009
1.024
1.038
99.6
97.6
96.3
98.6
2.115 175.2 0.059
1.753 164.4 0.055
1.492 154.4 0.052
1.278 145.0 0.050
62.6
64.6
62.3
54.1
45.7
36.6
26.7
20.3
16.0
13.4
11.3
8.8
7.3
4.4
-4.2
1.215 -130.0
1.285 -140.4
1.361 -155.4
1.434 -174.8
1.479 167.2
1.470 153.0
1.411 141.6
1.351 130.4
1.281 121.0
1.216 116.1
1.169 112.4
1.106 106.4
1.068 100.4
1.070
98.1
1.060 102.3 1.131 136.8 0.050
1.066 103.0 1.009 129.3 0.052
1.064
1.071
1.087
1.076
1.047
98.7
92.6
90.5
89.4
84.1
0.924 121.4 0.051
0.013 12.5 0.919 -89.6
0.013 17.8 0.958 -97.7
1.061 101.0
0.858 112.7 0.052 -17.4 1.034 102.7
0.810 103.2 0.048 -31.0 0.998 100.6
0.764
0.700
93.2
81.9
0.050 -45.2 0.990
0.044 -59.4 0.978
95.1
93.2
0.825 163.0 4.866 -17.4 0.012 26.4 1.002 -104.2
0.835 157.3 4.776 -27.7 0.014 37.8 1.050 -111.0
0.851 151.7 4.733 -37.8 0.014 48.1 1.105 -117.5
The data included 0.7 mils diameter Au bonding wires:
1 gate wires, 15 mils each; 1 drain wires, 20 mils each; 4 source wires, 7 mils each., 2 gate2 wires(to ground), 7 mils each
嵌入式系统
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