Excelics
DATA SHEET
0LQ
EPA025A-70
High Efficiency Heterojunction Power FET
•
•
•
•
•
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NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
+21.5dBm TYPICAL OUTPUT POWER
8.0dB TYPICAL POWER GAIN AT 18GHz
TYPICAL 0.85dB NOISE FIGURE AND 11.0dB
ASSOCIATED GAIN AT 12GHz
0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION PROFILE
PROVIDES EXTRA HIGH POWER EFFICIENCY,
AND HIGH RELIABILITY
'
6
*
6
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
P
1dB
G
1dB
PAE
NF
Ga
Idss
Gm
Vp
BVgd
BVgs
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
Vds=6V, Ids=50% Idss
Gain at 1dB Compression
Vds=6V, Ids=50% Idss
Power Added Efficiency at 1dB Compression
Vds=6V, Ids=50% Idss
Noise Figure
Vds=2V, Ids=15mA
Associated Gain
Vds=2V, Ids=15mA
Saturated Drain Current
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=1.0mA
-9
-6
f=12GHz
f=18GHz
f=12GHz
f=18GHz
f=12GHz
f=12GHz
f=12GHz
40
50
MIN
19.5
9.5
TYP
21.5
21.5
11.0
8.0
47
0.85
11.0
75
80
-1.0
-15
-14
370
*
o
All Dimensions In mils.
MAX
UNIT
dBm
dB
%
dB
dB
105
mA
mS
-2.5
V
V
V
C/W
Drain Breakdown Voltage Igd=1.0mA
Source Breakdown Voltage Igs=1.0mA
Thermal Resistance
Rth
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Drain-Source Voltage
10V
6V
Vds
Gate-Source Voltage
-6V
-3V
Vgs
Drain Current
Idss
50mA
Ids
Forward Gate Current
12mA
2mA
Igsf
Input Power
18dBm
@ 3dB Compression
Pin
o
Channel Temperature
175 C
150
o
C
Tch
Storage Temperature
-65/175
o
C
-65/150
o
C
Tstg
Total Power Dissipation
370mW
310mW
Pt
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals
.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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