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EPA018BV-70SC

产品描述High Efficiency Heterojunction Power FET
产品类别分立半导体    晶体管   
文件大小78KB,共1页
制造商Excelics [Excelics Semiconductor, Inc.]
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EPA018BV-70SC概述

High Efficiency Heterojunction Power FET

EPA018BV-70SC规格参数

参数名称属性值
厂商名称Excelics [Excelics Semiconductor, Inc.]
包装说明,
Reach Compliance Codeunknow

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EPA018BV-70SC
ISSUED 01/31/2006
High Efficiency Heterojunction Power FET
FEATURES
None-Hermetic Low Cost Ceramic 70mil Package
+20.0 dBm Output Power at 1dB Compression
11.0 dB Power Gain at 18GHz
Typical 0.75 dB Noise Figure and
12.5 dB Associated Gain at 12GHz
0.3 x 180 Micron Recessed “Mushroom” Gate
Si
3
N
4
Passivation
Advanced Epitaxial Heterojunction Profile Provides
Extra High Power Efficiency, and High Reliability
Caution! ESD sensitive device.
MIN
18.5
12.0
TYP
20.0
20.0
14
12
45
0.75
12.5
40
35
-9
-6
2.5
55
60
-1.0
-15
-14
480*
f = 24GHz
o
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
PAE
NF
GA
I
DSS
G
M
V
P
BV
GD
BV
GS
R
TH
|S
21
|
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 12GHz
f = 18GHz
V
DS
= 6V, I
DS
50% I
DSS
Gain at 1dB Compression
f = 12GHz
f = 18GHz
V
DS
= 6V, I
DS
50% I
DSS
Power Added Efficiency at 1dB Compression
f = 12GHz
V
DS
= 6V, I
DS
50% I
DSS
Noise Figure V
DS
= 2V, I
DS
= 15mA
f = 12GHz
Associate Gain V
DS
= 2V, I
DS
= 15mA
Saturated Drain Current
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage
Source Breakdown Voltage
Thermal Resistance
Insersion Gain in dB
V
DS
= 6V, I
DS
50% I
DSS
f = 12GHz
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 1.0 mA
I
GD
= 1.0mA
I
GS
= 1.0mA
MAX
UNITS
dBm
dB
%
dB
dB
90
-2.5
mA
mS
V
V
V
C/W
dB
Notes:
*
Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL
V
DS
V
GS
I
DS
I
GSF
P
IN
P
T
T
CH
T
STG
1.
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Forward Gate Current
Input Power
Total Power Dissipation
Channel Temperature
Storage Temperature
VALUE
6V
-3 V
40 mA
1.5 mA
@ 3dB compression
240 mW
150°C
-65/+150°C
2.
Exceeding any of the above ratings may result in permanent damage.
Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1of 1
Revised January 2006

 
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