UNISONIC TECHNOLOGIES CO., LTD
MJE13003D
HIGH VOLTAGE
FAST-SWITCHING NPN
POWER TRANSISTOR
DESCRIPTION
NPN SILICON TRANSISTOR
The UTC
MJE13003D
is a NPN Power Transistor. It is
intended to be used in applications requiring medium voltage
capability and high switching speeds.
FEATURES
* Fast-Switching And High Voltage Capability
* Dynamic Parameters With Low Spread
* High Reliability
* Integrated Antiparallel Collector-Emitter Diode
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
E
C
B
E
C
B
Packing
Bulk
Tube
Tube
Tape Reel
Tape Box
Bulk
Tape Box
Bulk
Ordering Number
Package
Lead Free
Halogen Free
MJE13003DL-x-T60-K
MJE13003DG-x-T60-K
TO-126
MJE13003DL-x-TA3-T
MJE13003DG-x-TA3-T
TO-220
MJE13003DL-x-TM3-T
MJE13003DG-x-TM3-T
TO-251
MJE13003DL-x-TN3-R
MJE13003DG-x-TN3-R
TO-252
MJE13003DL-x-T92-B
MJE13003DG-x-T92-B
TO-92
MJE13003DL-x-T92-K
MJE13003DG-x-T92-K
TO-92
MJE13003DL-x-T92-A-B
MJE13003DG-x-T92-A-B
TO-92
MJE13003DL-x-T92-A-K
MJE13003DG-x-T92-A-K
TO-92
Note: Pin Assignment: E: Emitter B: Base C: Collector
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QW-R204-025.K
MJE13003D
MARKING
PACKAGE
NPN SILICON TRANSISTOR
MARKING
TO-220 / TO-251 / TO-252
TO-126
TO-92
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QW-R204-025.K
MJE13003D
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector- Emitter Voltage (V
BE
=0)
V
CES
700
V
Collector-Emitter Voltage (I
B
=0)
V
CEO
400
V
Emitter-Base Voltage (I
C
=0, I
B
=0.75A, t
P
<10μS)
V
EBO
9
V
Collector Current
I
C
1.5
A
Collector Peak Current (t
P
<5ms)
I
CM
3
A
Base Current
I
B
0.75
A
Base Peak Current (t
P
<5ms)
I
BM
1.5
A
TO-126
1.4
W
TO-92
1.1
W
T
A
=25°C
TO-220
2
W
TO-251/TO-252
1.56
W
P
D
Power Dissipation
TO-126
20
W
TO-92
1.5
W
T
C
=25°C
TO-220
40
W
TO-251/TO-252
25
W
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
TO-220
TO-251
TO-126
TO-92
TO-220
TO-251
TO-126
TO-92
θ
JA
RATING
62.5
80.13
89.29
113.64
0.63
1.0
1.25
16.67
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
Junction to Case
θ
JC
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QW-R204-025.K
MJE13003D
PARAMETER
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage (Note)
Collector Cut-Off Current
Collector-Emitter Saturation Voltage (Note)
Base-Emitter Saturation Voltage (Note)
DC Current Gain
Resistive Load
Rise Time
Storage Time
Fall Time
SYMBOL
BV
EBO
V
CEO(SUS)
I
CES
V
CE(SAT)
V
BE(SAT)
h
FE1
h
FE2
t
R
t
S
t
F
t
S
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
TEST CONDITIONS
I
E
=10mA, I
C
=0
I
C
=10mA, I
B
=0
V
CE
=700V,V
BE
=0
I
C
=0.5 A, I
B
=0.1 A
I
C
=1 A, I
B
=0.25 A
I
C
=1.5 A, I
B
=0.5 A
I
C
=0.5 A, I
B
=0.1 A
I
C
=1 A, I
B
=0.25 A
I
C
=0.5A, V
CE
=5 V
I
C
=1 A, V
CE
=5 V
V
CC
=125 V, I
C
=1 A, I
B1
=0.2 A,
I
B2
=-0.2 A, t
P
=25μs
MIN
9
400
TYP MAX UNIT
18
V
V
1
mA
0.5
V
1
V
3
V
1
V
1.2
V
57
30
1
μs
4
μs
0.7
μs
0.8
1.5
μs
V
14
5
I
C
=1 A, I
B1
=0.2 A,V
BE
=-5 V,
L=50mH, V
CLAMP
=300V
V
F
Diode Forward Voltage
I
F
=0.5 A
Note: Pulse Test: Pulse duration
≤
300μs, Duty cycle
≤
2%.
Inductive Load Storage Time
CLASSIFICATION OF h
FE1
RANK
RANGE
A
14 ~ 22
B
21 ~ 27
C
26 ~ 32
D
31 ~ 37
E
36 ~ 42
F
41 ~ 47
G
46 ~ 52
H
51 ~ 57
UNISONIC TECHNOLOGIES CO., LTD
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QW-R204-025.K
MJE13003D
TEST CIRCURTS
Inductive Load Switching Test Circuit
NPN SILICON TRANSISTOR
(3)
I
C
(1)
I
B
R
BB
(2)
V
BB
-
+
V
CE
V
Clamp
V
CC
Notes: 1. Fast Electronic Switch
2. Non-Inductive Resistor
3. Fast Recovery Rectifier
Resistive Load Switching Test Circuit
I
C
(1)
I
B
V
CE
R
C(2)
R
BB
(2)
V
BB
-
+
V
CC
Notes: 1. Fast Electronic Switch
2. Non-Inductive Resistor
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R204-025.K
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