电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

HSM11PT

产品描述HIGH EFFICIENCY SILICON RECTIFIER
文件大小79KB,共2页
制造商CHENMKO
官网地址http://www.chenmko.com/
下载文档 选型对比 全文预览

HSM11PT概述

HIGH EFFICIENCY SILICON RECTIFIER

文档预览

下载PDF文档
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT GLASS PASSIVATED
HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 - 1000 Volts CURRENT 1.0 Ampere
FEATURES
For surface mounted applications
Low forward voltage, high current capability
Low leakage current
Metallurgically bonded construction
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
* Glass passivated junction
* High temperature soldering guaranteed :
260
o
C/10 seconds at terminals
0.110(2.80)
0.094(2.40)
(1)
HSM11PT
THRU
HSM18PT
*
*
*
*
*
SMA
0.065(1.65)
0.049(1.25)
0.181(4.60)
0.165(4.20)
0.012(0.310)
0.006(0.150)
(2)
MECHANICAL DATA
Case:
JEDEC SMA molded plastic
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Indicated by cathode band
Weight:
0.002 ounces, 0.064 gram
0.090(2.30)
0.075(1.90)
0.060(1.52)
0.030(0.76)
0.008 (0.203)(max)
0.212(5.40)
0.189(4.80)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 H
Z
, resistive or inductive load.
For capacitive load, derate current by 20%.
o
Dimensions in inches and (millimeters)
SMA
UNITS
Volts
Volts
Volts
Amps
MAXIMUM RATINGES
( At T
A
= 25
o
C unless otherwise noted )
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current T
L
= 110
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
C
J
T
J
, T
STG
15
-65 to +150
12
pF
o
SYMBOL
V
RRM
V
RMS
V
DC
I
O
HSM11PT HSM12PT HSM13PT HSM14PT HSM15PT HSM16PT HSM17PT HSM18PT
50
35
50
100
70
100
200
140
200
300
210
300
1.0
400
280
400
600
420
600
800
560
800
1000
700
1000
30
Amps
C
ELECTRICAL CHARACTERISTICS
( At T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 1.0 A DC
Maximum DC Reverse Current
o
at Rated DC Blocking Voltage at T
A
= 25 C
Maximum Full Load Reverse Current Average,
Full Cycle at T
A
= 55
o
C
Maximum Reverse Recovery Time (Note 2)
NOTES : 1. Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 volts
2. Test Conditions : I
F
= 0.5 A, I
R
= -1.0 A, I
RR
= -0.25 A
SYMBOL
V
F
HSM11PT HSM12PT HSM13PT HSM14PT HSM15PT HSM16PT HSM17PT HSM18PT
UNITS
Volts
uAmps
uAmps
1.0
1.3
5.0
1.5
1.7
I
R
100
trr
50
70
nSec
2002-5

HSM11PT相似产品对比

HSM11PT HSM12PT HSM13PT HSM14PT HSM15PT HSM17PT HSM18PT HSM16PT
描述 HIGH EFFICIENCY SILICON RECTIFIER HIGH EFFICIENCY SILICON RECTIFIER HIGH EFFICIENCY SILICON RECTIFIER HIGH EFFICIENCY SILICON RECTIFIER HIGH EFFICIENCY SILICON RECTIFIER HIGH EFFICIENCY SILICON RECTIFIER HIGH EFFICIENCY SILICON RECTIFIER high efficiency silicon rectifier

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2251  1164  2151  1404  915  24  48  55  30  32 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved