Datasheet> 器件分类 > 分立半导体> 晶体管> IRFN5210-JQR-B

IRFN5210-JQR-B: 产品描述Power Field-Effect Transistor, 34A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, CERAMIC PACKAGE-3; 产品类别分立半导体晶体管; 文件大小455KB，共3页; 制造商TT Electronics plc; 官网地址http://www.ttelectronics.com/

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IRFN5210-JQR-B概述

Power Field-Effect Transistor, 34A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, CERAMIC PACKAGE-3

IRFN5210-JQR-B规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	TT Electronics plc
包装说明	CHIP CARRIER, R-CBCC-N3
Reach Compliance Code	compliant
ECCN代码	EAR99
其他特性	AVALANCHE RATED
雪崩能效等级（Eas）	780 mJ
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	100 V
最大漏极电流 (ID)	34 A
最大漏源导通电阻	0.06 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-276AB
JESD-30 代码	R-CBCC-N3
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	175 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR
封装形式	CHIP CARRIER
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	P-CHANNEL
最大脉冲漏极电流 (IDM)	120 A
认证状态	Not Qualified
表面贴装	YES
端子形式	NO LEAD
端子位置	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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P-CHANNEL

POWER MOSFET

IRFN5210

•

Low RDS(on) Power MOSFET Transistor,

Fully Avalanche Rated

•

Hermetic Ceramic Surface Mount package

Designed For Fast Switching Applications

Screening Options Available

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise stated)

VDS

VGS

IDM

EAS

dv/dt

Tstg

Drain – Source Voltage

Gate – Source Voltage

Continuous Drain Current

Pulsed Drain Current

(1)

Total Power Dissipation at

Tc = 25°C

Tc = 100°C

Tc = 25°C

Derate Above 25°C

Single Pulse Avalanche Energy

(2)

Peak Diode Recovery

(3)

Junction Temperature Range

Storage Temperature Range

-100V

±20V

-34A

-24A

-120A

150W

1.0W/°C

780mJ

-5.0V/ns

-55 to +175°C

THERMAL PROPERTIES

Symbols

θJC

Parameters

Thermal Resistance, Junction To Case

Max.

1.0

Units

°C/W

Notes

(1) Repetitive Rating: Pulse width limited by maximum junction temperature

(2) @VDD = -25V, L = 3.1mH, Peak IL = -21A, Starting TJ = 25°C, RG = 25Ω

(3)

(4)

@ ISD

≤

-21A, di/dt

≤

-480A/µs, VDD

≤

-100V, TJ

≤

175°C

Pulse Width

≤

300us,

δ ≤

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email:

sales@semelab-tt.com

Document Number 5587

Issue 2

Page 1 of 3

Website:

http://www.semelab-tt.com

IRFN5210-JQR-B相似产品对比

	IRFN5210-JQR-B
描述	Power Field-Effect Transistor, 34A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, CERAMIC PACKAGE-3
是否Rohs认证	不符合
厂商名称	TT Electronics plc
包装说明	CHIP CARRIER, R-CBCC-N3
Reach Compliance Code	compliant
ECCN代码	EAR99
其他特性	AVALANCHE RATED
雪崩能效等级（Eas）	780 mJ
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	100 V
最大漏极电流 (ID)	34 A
最大漏源导通电阻	0.06 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-276AB
JESD-30 代码	R-CBCC-N3
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	175 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR
封装形式	CHIP CARRIER
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	P-CHANNEL
最大脉冲漏极电流 (IDM)	120 A
认证状态	Not Qualified
表面贴装	YES
端子形式	NO LEAD
端子位置	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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