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SK320AE4

产品描述Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
产品类别分立半导体    二极管   
文件大小260KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
下载文档 详细参数 全文预览

SK320AE4概述

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AC, SMA, 2 PIN

SK320AE4规格参数

参数名称属性值
厂商名称Taiwan Semiconductor
包装说明R-PDSO-C2
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性LOW POWER LOSS
应用EFFICIENCY
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.95 V
JEDEC-95代码DO-214AC
JESD-30 代码R-PDSO-C2
最大非重复峰值正向电流70 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-65 °C
最大输出电流3 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
参考标准AEC-Q101
最大重复峰值反向电压200 V
最大反向电流100 µA
表面贴装YES
技术SCHOTTKY
端子形式C BEND
端子位置DUAL

文档预览

下载PDF文档
CREAT BY ART
SK32A - SK320A
3.0AMPS Surface Mount Schottky Barrier Rectifiers
SMA/DO-214AC
Features
Low power loss, high efficiency
Metal to silicon rectifier, majority carrier conduction
High surge current capability, Low VF,
Easy pick and place
Plastic material used carriers Underwriters
Laboratory Classigication 94V-0
Epitaxial construction
Guard-ring for transient protection
High temperature soldering guaranteed:
260℃/10s at terminals
Meet MSL level 1, per J-STD-020D
lead free, maximum peak of 260℃
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Case: SMA/DO-214AC
Lead: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: Indicated by cathode band
Packaging: 12mm tape per EIA STD RS-481
Weight: 0.07 gram
Ordering Information (example)
Part No.
SK32A
Package
SMA
Packing
1.8K / 7" REEL
Packing
code
R3
Green Compound
Packing code
R3G
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
Maximum Instantaneous Forward Voltage (Note 1)
@3A
Maximum Reverse Current @ Rated VR
T
A
=25
T
A
=100
T
A
=125℃
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
SK
32A
20
14
20
SK
33A
30
21
30
SK
34A
40
28
40
SK
35A
50
35
50
SK
36A
60
42
60
3
70
SK
39A
90
63
90
SK
310A
100
70
100
SK
315A
150
105
150
SK
320A
200
140
200
Unit
V
V
V
A
A
0.55
0.5
0.75
0.85
0.1
0.95
V
I
R
C
j
R
θjL
R
θjA
T
J
T
STG
10
-
600
5.0
290
28
88
- 65 to + 150
- 65 to + 150
-
0.5
110
mA
pF
O
Typical Junction Capecitance (Note 2)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cylcle
C/W
O
O
C
C
Note 2: Measure at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:L12

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