电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

HS3DM6G

产品描述Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AB, SMC, 2 PIN
产品类别分立半导体    二极管   
文件大小429KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 全文预览

HS3DM6G概述

Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AB, SMC, 2 PIN

HS3DM6G规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
包装说明R-PDSO-C2
Reach Compliance Codenot_compliant
ECCN代码EAR99
应用EFFICIENCY
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1 V
JEDEC-95代码DO-214AB
JESD-30 代码R-PDSO-C2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值正向电流150 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流3 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
最大重复峰值反向电压200 V
最大反向电流10 µA
最大反向恢复时间0.05 µs
表面贴装YES
端子面层Matte Tin (Sn)
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

下载PDF文档
creat by ART
HS3A - HS3M
3.0AMPS High Efficient Surface Mount Rectifiers
SMC/DO-214AB
Features
Glass passivated junction chip.
For surface mounted application
Low forward voltage drop
Low profile package
Built-in stain relief, ideal for automatic
placement
Fast switching for high efficiency
High temperature soldering:
260℃/10 seconds at terminals
Meet MSL level 1, per J-STD-020D,
lead free maximum peak of 260℃
Plastic material used carries Underwriters
Laboratory Classification 94V-0
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Cases: Molded plastic
Terminal: Pure tin plated, lead free
Polarity: Indicated by cathode band
Packing: 16mm tape per EIA STD RS-481
Weight: 0.21 grams
Ordering Information (example)
Part No.
HS3A
Package
SMC
Packing
850 / 7" REEL
Packing code
R7
Packing code
(Green)
R7G
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@ 3A
Maximum DC Reverse Current at
Rated DC Blocking Voltage
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
@ T
A
=25
@ T
A
=125
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θjA
T
J
T
STG
HS
3A
50
35
50
HS
3B
100
70
100
HS
3D
200
140
200
HS
3F
300
210
300
3
150
HS
3G
400
280
400
HS
3J
600
420
600
HS
3K
800
560
800
HS
3M
1000
700
1000
Units
V
V
V
A
A
1.0
10
250
50
80
60
1.3
1.7
V
uA
uA
Maximum Reverse Recovery Time (Note 2)
75
50
O
nS
pF
C/W
O
O
- 55 to + 150
- 55 to + 150
C
C
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied V
R
=4.0 Volts
Version:G13

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 916  456  81  1982  945  19  10  2  40  20 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved