Small Signal Field-Effect Transistor, 0.25A I(D), 160V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | Supertex |
包装说明 | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 160 V |
最大漏极电流 (Abs) (ID) | 0.25 A |
最大漏极电流 (ID) | 0.25 A |
最大漏源导通电阻 | 15 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss) | 8 pF |
JEDEC-95代码 | TO-92 |
JESD-30 代码 | O-PBCY-T3 |
JESD-609代码 | e0 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | ROUND |
封装形式 | CYLINDRICAL |
峰值回流温度(摄氏度) | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL |
最大功率耗散 (Abs) | 1 W |
认证状态 | Not Qualified |
表面贴装 | NO |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE |
端子位置 | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
VN0116N3 | VN0116ND | VN0120N5 | VN0116N2 | |
---|---|---|---|---|
描述 | Small Signal Field-Effect Transistor, 0.25A I(D), 160V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Small Signal Field-Effect Transistor, 160V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | Power Field-Effect Transistor, 0.7A I(D), 200V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Small Signal Field-Effect Transistor, 0.35A I(D), 160V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 |
包装说明 | CYLINDRICAL, O-PBCY-T3 | UNCASED CHIP, S-XUUC-N3 | FLANGE MOUNT, R-PSFM-T3 | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code | unknown | unknown | unknown | unknow |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 160 V | 160 V | 200 V | 160 V |
最大漏源导通电阻 | 15 Ω | 15 Ω | 10 Ω | 15 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss) | 8 pF | 8 pF | 8 pF | 8 pF |
JESD-30 代码 | O-PBCY-T3 | S-XUUC-N3 | R-PSFM-T3 | O-MBCY-W3 |
JESD-609代码 | e0 | e0 | e0 | e0 |
元件数量 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | UNSPECIFIED | PLASTIC/EPOXY | METAL |
封装形状 | ROUND | SQUARE | RECTANGULAR | ROUND |
封装形式 | CYLINDRICAL | UNCASED CHIP | FLANGE MOUNT | CYLINDRICAL |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | YES | NO | NO |
端子面层 | Tin/Lead (Sn/Pb) | TIN LEAD | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE | NO LEAD | THROUGH-HOLE | WIRE |
端子位置 | BOTTOM | UPPER | SINGLE | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
厂商名称 | Supertex | - | Supertex | Supertex |
最大漏极电流 (Abs) (ID) | 0.25 A | - | 0.7 A | 0.35 A |
最大漏极电流 (ID) | 0.25 A | - | 0.7 A | 0.35 A |
JEDEC-95代码 | TO-92 | - | TO-220AB | TO-39 |
最大功率耗散 (Abs) | 1 W | - | 15 W | 3.5 W |
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