SSO-AD-800-TO5i
Avalanche Photodiode
Special characteristics
High gain at low bias voltage
Fast rise time
800 µm diameter active area
low capacitance
Parameters:
active area
dark current
(M=100)
1)
Total capacitance
(M=100)
2)
Break down U
BR
(at I
D
=2µA)
Temperature coefficient of U
BR
Spectral responsivity
at 780 nm
Cut-off frequency
(-3dB)
Rise time
Optimum gain
Gain M
"Exess Noise" factor
(M=100)
"Exess Noise" index
(M=100)
Noise current
(M=100)
N.E.P.
(M=100, 880 nm)
Operating temperature
Storage temperature
1) measurement conditions:
1)
Package 3 (TO5i) :
0,5 mm
∅
800 µm
max. 6 nA
typ. 4 nA
typ.5 pF
100 - 220 V
typ. 0,4 %/°C
min. 0,40 A/W
typ. 0,45 A/W
typ. 0,5 GHz
typ. 700 ps
50 - 60
min 200
2
typ. 2,2
typ. 0,2
typ. 3 pA/Hz
½
typ. 4 * 10 W/Hz
-20 ... +70°C
-60 ... +100°C
-14
½
Setup of photo current 10nA at M=1 and irradiation by a
NIR-LED (880nm, 80nm bandwidth).
Rise of the photo current up to 1 µA, (M=100) by internal
multiplication due to an increasing bias voltage.
2) limited U
BR
range possible to agree
SSO - AD - serie
Spectral Responsivity at M=1
0,600
0,500
0,400
0,300
0,200
0,100
0,000
400
500
600
700
800
900
1000
1100
60
50
40
30
20
10
0
400
500
SSO - AD - serie
Spectral Responsivity at M=100
S
abs
(A/W)
S
abs
(A/W)
600
700
800
900
1000
1100
Wavelength (nm)
Wavelength (nm)
SSO - AD - serie
quantum efficiency for M=1
1,00
0,90
0,80
0,70
0,60
QE
0,50
0,40
0,30
0,20
0,10
0,00
400
480
560
640
720
800
880
960
1040
wavelength (nm)
10
0
0
20
40
80
70
60
Ctot=f(U
R
)
AD800
-
TO5i
Ctot [pF]
50
40
30
20
60
80
100
U
R
[V]
ID=f(U
R
/U
BR
)
100000
AD800-TO5i
Gain=f(U
R
/U
BR
)
1000
AD800-TO5i
10000
100
1000
Gain (M)
10
1
0,100
0,200
0,300
0,400
0,500
0,600
0,700
0,800
0,900
1,000
Id [pA]
100
10
0,000
0,000
0,100
0,200
0,300
0,400
0,500
0,600
0,700
0,800
0,900
1,000
U
R
/U
BR
U
R
/U
BR
Maximum Ratings:
•
•
•
•
max. electrical power dissipation
max. optical peak value, once
max. continous optical operation
( P
electr.
= P
opt.
* S
abs
* M * U
R
)
200 mW at 22°C
400 mW for 1 s
I
Ph
(DC)
≤
500 µA
≤
2 mA for signal 50 µs "on" / 1 ms "out"
Bias supply voltage
Current limiting resistor
Application hints:
•
•
•
•
•
•
•
Current limit is to be realized via protecting resistor or current limiting - IC inside the
supply voltage.
Use of low noise read-out - IC.
For higher gain a regulation of bias voltage due to the temperature is to be realized.
For very small signals stray light (noise source) is to be excluded by filters in order to
improve the signal-noise relation.
Avoid touching the window with fingers!
Careful cleaning with Ethyl alcohol possible.
Avoid use of pointed and scratching tools!
min. 0,1 µF,
closest to APD
APD
Diode, protective circuit
Read-out circuit or
f.e. 50Ω Load resistance
Handling precautions:
•
•
•
Soldering temperature
min. Pin - length
ESD - protection
Storage
260°C for max. 10 s. The device must be protected against solder flux vapour!
2mm
Only small danger for the device. Standard precautionary measures are sufficient.
Store devices in conductive foam.
1999/07
•
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