SSO-AD-500 NIR-TO52-S1
Avalanche Photodiode NIR
Special characteristics:
quantum efficiency >80% at
!
760-910 nm
high speed, low noise
500 µm diameter active area
low slope multiplication curve
Parameters:
active area
dark current
(M=100)
1)
Total capacitance
(M=100)
Break-down voltage U
BR
(at I
D
=2µA)
Temperature coefficient of U
BR
Spectral responsivity
(at 780 nm)
Cut-off frequency
(-3dB)
Rise time
Optimum gain
Gain M
"Exess Noise" factor
(M=100)
"Exess Noise" index
(M=100)
Noise current
(M=100)
N.E.P.
(M=100, 880 nm)
Operating temperature
Storage temperature
50 - 60
min 200
1)
Package (TO52 S1) :
0,196 mm
∅
500 µm
max. 5 nA
typ. 0,5 - 1 nA
typ. 1,2 pF
120 - 300 V
typ. 0,55 %/°C
min. 0,55 A/W
typ. 0,60 A/W
400 MHz
550 MHz
550 ps
300 ps
2
typ. 2,5
typ. 0,2
typ. 1 pA/Hz
½
typ. 2 * 10 W/Hz
-20 ... +70°C
-60 ... +100°C
-14
½
1)
measurement conditions:
Setup of photo current 10nA at M=1 and irradiation by a
NIR-LED (880 nm, 80 nm bandwith).
Rise of the photo current up to 1 µA, (M=100) by internal
multiplication due to an increasing bias voltage.
SSO-AD-series
Spectral Responsivity at M=1
0,700
0,600
0,500
Sabs (A/W)
Sabs (A/W)
70,00
60,00
50,00
40,00
30,00
20,00
10,00
0,00
SSO-AD-series
Spectral Responsivity at M=100
0,400
0,300
0,200
0,100
0,000
400
500
600
700
800
900
1000
1100
400
500
600
700
800
900
1000
1100
Wavelength (nm)
Wavelength (nm)
SSO-AD-series
QE for M=100
100,0
90,0
80,0
70,0
60,0
QE
50,0
40,0
30,0
20,0
10,0
0,0
400
500
600
700
800
900
1000
1100
Wavelength (nm)
SSO-AD 500
Id = f(Ur/Ubr)
10,000
SSO-AD 500
gain= f(Ur/Ubr)
1000,00
1,000
Id [nA]
100,00
0,100
M
10,00
0,010
0,001
0,000
0,100
0,200
0,300
0,400
0,500
0,600
0,700
0,800
0,900
1,000
1,00
0,000
0,100
0,200
0,300
0,400
0,500
0,600
0,700
0,800
0,900
1,000
Ur/Ubr
Ur/Ubr
Maximum Ratings:
•
•
•
•
max. electrical power dissipation
max. optical peak value, once
max. continous optical operation
( P
electr.
= P
opt.
* S
abs
* M * U
R
)
100 mW at 22°C
200 mW for 1 s
I
Ph
(DC)
≤
250 µA
≤
1 mA for signal 50 µs "on" / 1 ms "out"
Bias supply voltage
Current limiting resistor
Application hints:
•
•
•
•
•
•
•
Current limit is to be realized via protecting resistor or current limiting - IC inside the
supply voltage.
Use of low noise read-out - IC.
For higher gain a regulation of bias voltage due to the temperature is to be realized.
For very small signals stray light (noise source) is to be excluded by filters in order to
improve the signal-noise relation.
Avoid touching the window with fingers!
Careful cleaning with Ethyl alcohol possible.
Avoid use of pointed and scratching tools!
min. 0,1 µF,
closest to APD
APD
Diode, protective circuit
Read-out circuit or
f.e. 50Ω Load resistance
Handling precautions:
•
•
•
Soldering temperature
min. Pin - length
ESD - protection
Storage
260°C for max. 10 s. The device must be protected against solder flux vapour!
2mm
Only small danger for the device. Standard precautionary measures are sufficient.
Store devices in conductive foam.
2000/12
•
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