SSO-AD-230-TO52 NF
Avalanche Photodiode
Special characteristics:
High gain at low bias voltage
Fast rise time
230 µm diameter active area
low capacitance
Parameters:
Active area
dark current
(M=100)
1)
Total capacitance
(M=100)
Break-down voltage U
BR
(bei I
D
=2µA)
Temperature coefficient of U
BR
Spectral responsivity
at 780 nm
Cut-off frequency
(-3dB)
Rise time
Optimum gain
Gain M
"Excess Noise" factor
(M=100)
"Excess Noise" index
(M=100)
Noise current
(M=100)
N.E.P.
(M=100, 880 nm)
Operating temperature
Storage temperature
50 - 60
min 200
1)
Package 2a (TO52 Nail head) :
0,042 mm
∅
230 µm
max. 1,5 nA
typ. 0,6 nA
typ. 1,5 pF
(90 ... 240)
typ. 120 - 190 V
typ. 0,4 %/°C
min. 0,40 A/W
typ. 0,45 A/W
typ. 2 GHz
typ. 180 ps
2
typ. 2,2
typ. 0,2
typ. 0,5 pA/Hz
-14
½
typ. 1 * 10 W/Hz
-20 ... +70°C
-60 ... +100°C
½
1)
measurement conditions:
Setup of photo current 10nA at M=1 and irradiation by a
NIR-LED (880 nm, 80 nm bandwith).
Rise of the photo current up to 1 µA, (M=100) by internal
multiplication due to an increasing bias voltage
SSO - AD - serie
Spectral Responsivity at M=1
0,600
0,500
0,400
0,300
0,200
0,100
0,000
400
500
600
700
800
900
1000
1100
60
50
40
30
20
10
0
400
500
SSO - AD - serie
Spectral Responsivity at M=100
S
abs
(A/W)
S
abs
(A/W)
600
700
800
900
1000
1100
Wavelength (nm)
Wavelength (nm)
SSO - AD - serie
quantum efficiency for M=1
1,00
0,90
0,80
0,70
0,50
0,40
0,30
0,20
0,10
0,00
400
480
560
640
720
800
880
960
1040
4
2
0
0
20
C
tot
(pF)
14
12
10
8
6
SSO-AD 230
C
tot
=f(U
R
) at f=100kHz
16
0,60
QE
40
U
R
(V)
60
80
100
wavelength (nm)
SSO-AD 230
dark current = f(U
R
)
1000
100
10
M
1
0,1
0,01
0
20
40
60
80
U
R
(V)
100
120
140
160
10,00
100,00
10000,00
SSO-AD 230
gain = f(U
R
/U
BR
) at
λ
= 880 nm
1000,00
I
D
(pA)
1,00
0,0
0,2
0,4
U
R
/U
BR
0,6
0,8
1,0
Maximum Ratings:
•
•
•
•
Bias supply voltage
max. electrical power dissipation
max. optical peak value, once
max. continous optical operation
( P
electr.
= P
opt.
* S
abs
* M * U
R
)
100 mW at 22°C
200 mW for 1 s
I
Ph
(DC)
≤
250 µA
≤
1 mA for signal 50 µs "on" / 1 ms "out"
Current limiting resistor
Application hints:
•
•
•
•
•
•
•
Current limit is to be realized via protecting resistor or current limiting - IC inside the
supply voltage.
Use of low noise read-out - IC.
For higher gain a regulation of bias voltage due to the temperature is to be realized.
For very small signals stray light (noise source) is to be excluded by filters in order to
improve the signal-noise relation.
Avoid touching the window with fingers!
Careful cleaning with Ethyl alcohol possible.
Avoid use of pointed and scratching tools!
min. 0,1 µF,
closest to APD
APD
Diode, protective circuit
Read-out circuit or
f.e. 50Ω Load resistance
Handling precautions:
•
•
•
Soldering temperature
min. Pin - length
ESD - protection
Storage
260°C for max. 10 s. The device must be protected against solder flux vapour!
2mm
Only small danger for the device. Standard precautionary measures are sufficient.
Store devices in conductive foam.
1999/07
•
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