LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
•
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•
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ORDERING INFORMATION
Device
LMBT4401LT1G
S-LMBT4401LT1G
LMBT4401LT3G
S-LMBT4401LT3G
Marking
2X
2X
Shipping
3000/Tape & Reel
10000/Tape & Reel
1
2
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LMBT4401LT1G
S-LMBT4401LT1G
3
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
Value
40
60
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
1
BASE
SOT–23
3
COLLECTOR
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
2
EMITTER
R
θJA
P
D
R
θJA
T
J
, T
stg
DEVICE MARKING
LMBT4401LT1G = 2X
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 0.1 mAdc, I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 0.1 mAdc, I
C
= 0)
Base Cutoff Current
(V
CE
= 35 Vdc, V
EB
= 0.4 Vdc)
Collector Cutoff Current
(V
CE
= 35 Vdc, V
EB
= 0.4 Vdc)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300
µs;
Duty Cycle <2.0%.
V
(BR)CEO
40
V
(BR)CBO
60
V
(BR)EBO
Vdc
—
Vdc
—
Vdc
6.0
—
µAdc
—
0.1
µAdc
—
0.1
I
BEV
I
CEX
Rev.O 1/6
LESHAN RADIO COMPANY, LTD.
LMBT4401LT1G;S-LMBT4401LT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
h
FE
20
40
80
100
40
V
CE(sat)
––
––
V
BE(sat)
0.75
––
0.95
1.2
0.4
0.75
Vdc
––
––
––
300
––
Vdc
Min
Max
Unit
––
ON CHARACTERISTICS ( 3 )
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 150 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 500 mAdc, V
CE
= 2.0 Vdc)
Collector–Emitter Saturation Voltage
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
Base–Emitter Saturation Voltage
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= 20 mAdc, V
CE
= 10Vdc, f = 100 MHz)
Collector–Base Capacitance
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
Emitter–Base Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Small–Signal Current Gain
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Output Admittance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
f
T
250
C
cb
––
C
eb
––
h
ie
1.0
h
re
0.1
h
fe
40
h
oe
1.0
30
500
µmhos
8.0
—
15
X 10
–4
MHz
––
pF
6.5
pF
30
kΩ
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= 30 Vdc, V
EB
= 2.0 Vdc
I
C
= 150 mAdc, I
B1
= 15 mAdc)
(V
CC
= 30 Vdc, I
C
= 150 mAdc
I
B1
= I
B2
= 15 mAdc)
t
d
t
r
t
s
t
f
—
—
—
—
15
20
225
30
ns
ns
3. Pulse Test: Pulse Width <300
µs;
Duty Cycle <2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
+ 16 V
0
1.0 to 100µs,
DUTY CYCLE = 2%
+30 V
200
Ω
+ 16 V
1.0 to 100µs,
DUTY CYCLE = 2%
200Ω
1.0 kΩ
0
1.0 kΩ
C
S
* < 10 pF
C
S
*< 10 pF
–14 V
< 20 ns
– 2.0V
<2.0 ns
1N916
– 4.0 V
Scope rise time < 4.0ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
Rev.O 2/6
LESHAN RADIO COMPANY, LTD.
LMBT4401LT1G;S-LMBT4401LT1G
TRANSIENT CHARACTERISTICS
T
J
= 25°C
T
J
= 100°C
30
20
10
7.0
5.0
V
CC
= 30 V
I
C
/ I
B
= 10
Q
T
C
obo
CAPACITANCE (pF)
10
7.0
5.0
3.0
2.0
Q, CHARGE (pC)
1.0
0.7
0.5
0.3
0.2
0.1
C
cb
3.0
2.0
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
Q
A
10
20
30
50
70
100
200
300
500
REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Capacitance
100
70
50
100
Figure 4. Charge Data
I
C
/I
B
= 10
70
50
t
r
V
CC
= 30V
I
C
/I
B
=10
t , RISE TIME (ns)
30
20
t
r
@V
CC
=30V
t
r
@V
CC
=10V
t
d
@V
EB
=2.0V
t
d
@V
EB
=0V
30
20
t
f
t , TIME (ns)
10
7.0
5.0
10
20
30
50
70
100
200
300
500
10
7.0
5.0
10
20
30
50
70
100
200
300
500
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6. Rise and Fall Time
300
100
t
f
, STORAGE TIME (ns)
200
t
s
’ = t
s
– 1/8 t
f
I
B1
= I
B2
I
C
/I
B
= 10 to 20
t
f
, FALL TIME (ns)
70
50
V
CC
= 30 V
I
C
/I
B
= 20
I
B1
= I
B2
30
20
100
I
C
/I
B
= 10
70
50
10
7.0
30
10
20
30
50
70
100
200
300
500
5.0
10
20
30
50
70
100
200
300
500
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
Rev.O 3/6
LESHAN RADIO COMPANY, LTD.
LMBT4401LT1G;S-LMBT4401LT1G
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
V
CE
= 10 Vdc, T
A
= 25°C
Bandwidth = 1.0 Hz
10
10
I
C
= 1.0 mA, R
S
= 150
Ω
8.0
NF, NOISE FIGURE (dB)
I
C
= 50
µA,
R
S
= 4.0 kΩ
6.0
NF, NOISE FIGURE (dB)
I
C
= 500
µA,
R
S
= 200
Ω
I
C
= 100
µA,
R
S
= 2.0 kΩ
f = 1.0 kHz
R
S
= OPTIMUM
RS =
SOURCE
RS =
RESISTANCE
8.0
6.0
I
C
= 50
µA
I
C
= 100
µA
I
C
= 500
µA
I
C
= 1.0 mA
4.0
4.0
2.0
2.0
0
0.010.02
0.05 0.1
0.2
0.5 1.0
2.0
5.0
10
20
50
100
0
500
100
200
500
1.0k 2.0k
5.0k
10k
20k
50k
100k
f , FREQUENCY (kHz)
R
S
, SOURCE RESISTANCE (kΩ)
Figure 9. Frequency Effects
Figure 10. Source Resistance Effects
h PARAMETERS
(V
CE
= 10 Vdc, f = 1.0 kHz, T
A
= 25°C)
This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of
ransistors. To obtain these curves, a high–gain and a low–gain unit were selected from the LMBT4401LT1
lines, and the same units were used to develop the correspondingly numbered curves on each graph.
300
200
50
h
ie
, INPUT IMPEDANCE (kΩ)
20
10
5.0
LMBT4401LT1 UNIT 1
LMBT4401LT1 UNIT 2
h
fe
, CURRENT GAIN
100
70
50
LMBT4401LT1 UNIT 1
LMBT4401LT1 UNIT 2
2.0
1.0
0.5
30
20
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
7.0 5.0
10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
7.0 5.0
10
I
C
, COLLECTOR CURRENT (mA)
h
re
, VOLTAGE FEEDBACK RATIO (X 10
–4
)
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Current Gain
7.0
5.0
3.0
2.0
Figure 12. Input Impedance
h
oe
, OUTPUT ADMITTANCE (
µmhos)
100
50
10
LMBT4401LT1 UNIT 1
LMBT4401LT1 UNIT 2
LMBT4401LT1 UNIT 1
LMBT4401LT1 UNIT 2
20
10
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
7.0 5.0
10
5.0
2.0
1.0
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
7.0 5.0
10
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 13. Voltage Feedback Ratio
Figure 14. Output Admittance
Rev.O 4/6
LESHAN RADIO COMPANY, LTD.
LMBT4401LT1G;S-LMBT4401LT1G
STATIC CHARACTERISTICS
3.0
, NORMALIZED CURRENT GAIN
2.0
V
CE
= 1.0 V
V
CE
=10 V
T
J
= 125°C
1.0
25°C
0.7
0.5
–55°C
0.3
FE
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
20
300
500
h
I
C
, COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
V
CE
, COLLECTOR EMITTER VOLTAGE (VOLTS)
1.0
0.8
T
J
= 25°C
0.6
I
C
=1.0 mA
0.4
10 mA
100mA
500mA
0.2
0
0.01
0.02
0.03
0.05 0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
I
B
, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
10
+0.5
T
J
= 25°C
0.8
V
BE(sat)
@ I
C
/I
B
=10
COEFFICIENT (mV/ °C)
0
θ
VC
for V
CE(sat)
V, VOLTAGE ( VOLTS )
– 0.5
0.6
V
BE
@ V
CE
=1.0 V
–1.0
0.4
–1.5
0.2
V
CE(sat)
@ I
C
/I
B
=10
–2.0
θ
VB
for V
BE
0
0.1
0.2
0.5
1.0 2.0
5.0
10
20
50
100 200
500
– 2.5
0.1
0.2
0.5
1.0 2.0
5.0
10
20
50
100 200
500
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 17. “On” Voltages
Figure 18. Temperature Coefficients
Rev.O 5/6
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