MDD175-34N1
High Voltage Standard Rectifier Module
V
RRM
I
FAV
V
F
=
2x 3400 V
=
=
240 A
1.01 V
Phase leg
Part number
MDD175-34N1
Backside: isolated
2
1
3
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very low forward voltage drop
●
Improved thermal behaviour
Applications:
●
Diode for main rectification
●
For single and three phase
bridge configurations
●
Supplies for DC power equipment
●
Input rectifiers for PWM inverter
●
Battery DC power supplies
●
Field supply for DC motors
Package:
Y1
●
Isolation Voltage: 4800 V~
●
Industry standard outline
●
RoHS compliant
●
Base plate: Copper
internally DCB isolated
●
Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204i
© 2019 IXYS all rights reserved
MDD175-34N1
Rectifier
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 150 °C
d = 0.5
T
VJ
= 150 °C
0.74
1.27
0.04
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 25°C
182
900
8.50
9.18
7.23
7.81
V
mΩ
K/W
W
kA
kA
kA
kA
min.
typ.
max. non-repetitive reverse blocking voltage
max. Unit
3500
V
3400
1
5
1.07
1.26
1.01
1.26
240
V
mA
mA
V
V
V
V
A
V
R
= 3400 V
V
R
= 3400 V
I
F
= 200 A
I
F
= 400 A
I
F
= 200 A
I
F
= 400 A
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
average forward current
T
C
= 100 °C
180° sine
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
0.14 K/W
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
361.3 kA²s
350.6 kA²s
261.0 kA²s
253.4 kA²s
pF
C
J
junction capacitance
V
R
= 1100 V; f = 1 MHz
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204i
© 2019 IXYS all rights reserved
MDD175-34N1
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
M
T
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
mounting torque
terminal torque
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
Y1
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
600
150
125
125
Unit
A
°C
°C
°C
g
Nm
Nm
mm
mm
V
V
680
4.5
11
16.0
16.0
4800
4000
7
13
Production
Index (PI)
Date Code
(DC)
yywwAA
Circuit
Part Number
Lot.No: xxxxxx
Data Matrix:
part no.
(1-19), DC +
PI
(20-25),
lot.no.#
(26-31),
blank
(32),
serial no.#
(33-36)
Ordering
Standard
Ordering Number
MDD175-34N1
Marking on Product
MDD175-34N1
Delivery Mode
Box
Quantity
3
Code No.
504075
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Rectifier
* on die level
T
VJ
= 150°C
V
0 max
R
0 max
0.74
0.75
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204i
© 2019 IXYS all rights reserved
MDD175-34N1
Outlines Y1
3x M8
15
±1
52
+0
-1,4
49
2
32
+0
-1,9
10
20
22.5
35
28.5
45 67
43
1
2
6.2
80
92
115
18
3
2
1
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
38
50
20191204i
MDD175-34N1
Rectifier
600
7000
50 Hz, 80%V
RRM
10
6
V
R
= 0 V
500
6000
400
T
VJ
= 45°C
T
VJ
= 45°C
I
F
300
I
FSM
5000
I
2
t
10
5
T
VJ
= 150°C
[A]
200
[A]
4000
100
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 150°C
0.5
1.0
1.5
3000
0.001
[A s]
2
T
VJ
= 150°C
0
10
4
0.01
0.1
1
1
2
2
3
4 5 6 7 8 910
V
F
[V]
Fig. 1 Forward current versus
voltage drop per diode
400
t [s]
Fig. 2 Surge overload current
700
600
t [ms]
Fig. 3 I t versus time per diode
300
P
tot
200
DC =
1
0.5
0.4
0.33
0.17
0.08
R
thHA
=
0.1K/W
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
500
I
F(AV)M
400
[A]
300
200
100
[W]
100
DC =
1
0.5
0.4
0.33
0.17
0.08
0
0
100
200
300
0
50
100
150
0
0
50
100
150
I
F(AV)M
[A]
T
amb
[°C]
T
C
[°C]
Fig. 5 Max. forward current vs.
case temperature
Fig. 4 Power dissipation vs. direct output current and ambient temperature
0.16
0.12
Z
thJC
0.08
Constants for Z
thJC
calculation:
i
1
2
3
4
5
R
thi
(K/W)
0.155
0.332
0.713
0.3
0.00001
t
i
(s)
0.0005
0.0095
0.17
0.8
0.00001
[K/W]
0.04
0.00
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204i
© 2019 IXYS all rights reserved
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