MTI145WX100GD
Three phase full Bridge
with Trench MOSFETs
in DCB-isolated high-current package
V
DSS
= 100 V
I
D25
= 190 A
R
DSon typ.
= 1.7 mW
Part number
MTI145WX100GD
L1+
G1
G3
L2+
G5
L3+
Surface Mount Device
S1
S3
S5
L1
L2
L3
G2
G4
G6
S2
S4
L1-
S6
L2-
L3-
Features / Advantages:
• MOSFETs in trench technology:
− low R
DSon
− optimized intrinsic reverse diode
• Package:
− high level of integration
− high current capability
− aux. terminals for MOSFET control
− terminals for soldering or welding
connections
− isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Applications:
AC drives
• in automobiles
− electric power steering
− starter generator
• in industrial vehicles
− propulsion drives
− fork lift drives
• in battery supplied equipment
Package:
ISOPLUS-DIL
®
High level of integration
RoHS compliant
High current capability
Aux. Terminals
for MOSFET control
• Terminals for soldering or welding
connections
• Space and weight savings
•
•
•
•
Terms & Conditions of usage
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of
the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly
notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales
office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, test conditions and dimensions.
20170614f
© 2017 IXYS All rights reserved
1-7
MTI145WX100GD
MOSFETs
Symbol
V
DSS
V
GS
V
GSM
I
D25
I
D90
R
DS(on) 1)
V
GS(th)
I
DSS
I
GSS
R
G
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
rec(off)
R
thJC
R
thJH
Definitions
drain source breakdown voltage
gate source voltage
max. transient gate source voltage
continuous drain current
static drain source on resistance
gate threshold voltage
drain source leakage current
gate source leakage current
gate resistance
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
gate source charge
gate drain (Miller) charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
turn-off reverse recovery losses
thermal resistance junction to case
thermal resistance junction to heatsink
Ratings
Conditions
T
VJ
= 25°C to 150°C
min.
typ.
max.
100
±15
±20
T
C
= 25°C
T
C
= 90°C
on chip level at
I
D
= 100 A; V
GS
= 10 V
I
D
= 275 µA; V
DS
= V
GS
V
DS
= V
DSS
; V
GS
= 0 V
V
GS
= ±20 V; V
DS
= 0 V
on chip level
V
GS
= 0 V; V
DS
= 50 V; f = 1 Mhz
1.9
11.1
1.94
70
155
48
27
135
75
600
40
200
600
36
0.85
with heat transfer paste (IXYS test setup)
1)
Unit
V
V
V
A
A
mW
mW
V
µA
µA
nA
W
nF
nF
pF
nC
nC
nC
ns
ns
ns
ns
µJ
µJ
µJ
K/W
K/W
190
145
1.7
2.9
2.0
2.7
10
2.2
3.5
1
100
500
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
V
GS
= 10 V; V
DS
= 50 V; I
D
= 100 A
inductive load
V
GS
= 10 V; V
DS
= 50 V
I
D
= 100 A; R
G
= 27
W
T
VJ
= 125°C
1.1
1.4
V
DS
= I
D
·(R
DS(on)
+ 2·R
Pin to Chip
)
Source-Drain Diode
I
F25
I
F90
V
SD
Q
RM
I
RM
t
rr
forward current
source drain voltage
reverse recovery charge
max. reverse recovery current
reverse recovery time
T
C
= 25°C
T
C
= 90°C
I
F
= 100 A; V
GS
= 0 V
V
R
= 50 V; I
F
= 100 A
R
G
= 27
W (di/dt
= 1700 A/µs)
T
VJ
= 25°C
T
VJ
= 125°C
0.9
2
54
60
180
105
1.2
A
A
V
µC
A
ns
IXYS reserves the right to change limits, test conditions and dimensions.
20170614f
© 2017 IXYS All rights reserved
2-7
MTI145WX100GD
Package ISOPLUS-DIL®
Symbol
I
RMS
Definitions
RMS current
Ratings
Conditions
per pin in main current paths
(L1+...L3+, L1-...L3-, L1...L3)
may be additionally limited by external connections
(PCB tracks)
2 pins for output L1, L2, L3
min.
typ.
max.
75
Unit
A
T
stg
T
op
T
VJ
Weight
F
C
V
ISOL
R
pin-chip
C
P
storage temperature
operation temperature
virtual junction temperature
mounting force with clip
isolation voltage
resistance terminal to chip
coupling capacity
-55
-55
-55
13
50
t = 1 second
t = 1 minute
50/60 Hz, RMS, I
ISOL
< 1 mA
1200
1000
0.5
160
125
150
175
250
°C
°C
°C
g
N
V
V
mW
pF
V
DS
= I
D
·(R
DS(on)
+ 2·R
pin to chip
)
between shorted pins and back side metallization
DCB
backside
Part number
M
T
I
145
WX
100
GD
= MOSFET
= Trench
= Infineon Trench
= Current Rating [A]
= 6-Pack with separated Phase Legs
= Reverse Voltage [V]
= ISOPLUS-DIL
yywwC
Assembly Line
Date Code
Type Number
Assembly Code
XXXXXXXXXXXX
YYYYYY
Ordering
Standard
Part Name
MTI145WX100GD-SMD
Marking on Product
MTI145WX100GD
Delivering Mode Base Qty Ordering Code
Tube
13
518023
IXYS reserves the right to change limits, test conditions and dimensions.
20170614f
© 2017 IXYS All rights reserved
3-7
MTI145WX100GD
Outlines ISOPLUS-DIL®
L1+
G1
G3
L2+
G5
L3+
S1
S3
S5
L1
L2
L3
G2
G4
G6
S2
S4
L1-
S6
L2-
L3-
IXYS reserves the right to change limits, test conditions and dimensions.
20170614f
© 2017 IXYS All rights reserved
4-7
MTI145WX100GD
1.2
I
DSS
= 1 mA
1.1
300
V
DS
= 25 V
V
DSS
1.0
normalized
200
I
D
[A]
100
T
VJ
= 125°C
T
VJ
= 25°C
[V]
0.9
0.8
-40
0
0
40
80
120
160
2
3
4
5
6
T
J
[°C]
Fig.1 Drain source breakdown voltage
V
DSS
vs. junction temperature T
VJ
V
GS
[V]
Fig. 2 Typ. transfer characteristics
300
V
G S
=
20 V
15 V
10 V
7V
6.5 V
6V
5.5 V
V
GS
=
6V
5.5 V
300
I
D
200
5V
I
D
200
[A]
100
T
VJ
= 25°C
20 V
15 V
10 V
7V
6.5 V
5V
[A]
100
T
VJ
= 125°C
0
0
0.0
0.2
0.4
0.6
V
DS
[V]
0.8
1.0
0.0
0.5
1.0
1.5
2.0
V
DS
[V]
Fig. 4 Typ. output characteristics
on die level
Fig. 3 Typ. output characteristics
on die level
2.5
V
GS
= 10 V
I
D
= 38 A
5
3
5V
2.0
4
3
R
DS(on)
1.5
R
DS(on)
2
norm.
R
DS(on)
1.0
norm.
R
DS(on)
normalized
R
DS(on)
2
T
J
= 125°C
5.5 V
6V
6.5 V
[mΩ]
1
0
0
25
50
75
100
125
150
175
1
15 V
20 V
7V
10 V
0.5
0.0
-25
0
0
100
200
300
400
T
J
[°C]
Fig.5 Drain source on-state resistance R
DS(on)
vs. junction temperature T
VJ
, on die level
IXYS reserves the right to change limits, test conditions and dimensions.
I
D
[A]
Fig. 6 Drain source on-state resistance
R
DS(on)
versus I
D
, on die level
20170614f
© 2017 IXYS All rights reserved
5-7
stm32/stm8
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