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SGBJ50-10

产品描述三相整流桥, 1000V, 50V, 500A, 1.1V, 25A, 5uA
产品类别模拟混合信号IC    三相整流桥   
文件大小750KB,共2页
制造商LGE
官网地址http://www.luguang.cn/web_en/index.html
下载文档 详细参数 选型对比 全文预览

SGBJ50-10概述

三相整流桥, 1000V, 50V, 500A, 1.1V, 25A, 5uA

SGBJ50-10规格参数

参数名称属性值
PackageSGBJ
Maximum recurrent peak reverse voltage1000
IAV(V)50
Peak forward surge current500
Maximum instantaneous forward voltage1.1
Maximum average forward rectified current25
Maximum reverse current5
TJ(℃)-55-150

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SGBJ50 SERIES
Glass Passivated 3 Phase Bridge Rectifiers
Features
Low
Reverse Voltage - 800 to 1600Volts
Forward Current - 50 Amperes
forward voltage drop
High current capability
High reliability
SGBJ
Mechanical Data
Case:
Epoxy case with heat sink
Polarity:
Symbol marked on body
Mounting position:
Bolt pass through the mounting hole of body
then fixto heat sink
Mounting torque (M4)
1
: 0.8 N.m
Maximum
Applications
应用
For
use in high power supply inverters,servo
motor and welding machine applications
Package Outline Dimensions in Inches (Millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristics
Maximum Repetitive Peak Reverse
Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Non-Repetitive Reverse Voltage
Maximum Average Forward Rectified Current @T
C
=110
Peak Forward Surge Current, 8.3mS Single Half Sine-Wave,
Superimposed on Rated Load (JEDEC Method)
I
2
t Rating for Fusing (t<8.3mS)
Peak Forward Voltage per Diode at 25A
DC
Maximum DC Reverse Current at Rated @T
J
=25℃
DC Blocking Voltage per Diode @T
J
=150℃
Typical Thermal Resistance to
Case
RMS lsolation Voltage from Case to Lead
Operating Junction Temperature Range
Storage Temperature Range
Notes: 1. Surface roughness of Heat sink
<0.05mm
2. The typical data above is for reference only
Symbol
SGBJ50
-08
V
RRM
V
RMS
V
DC
V
RSM
I
(AV)
800
560
800
900
SGBJ50
-10
1000
700
1000
1100
50
SGBJ50
-12
1200
840
1200
1300
SGBJ50
-16
1600
1120
1600
1700
V
V
V
V
A
Unit
I
FSM
I
2
t
V
F
500
1037.5
1.1
5
A
2
A S
V
μA
mA
℃/W
V
I
R
3
0.8
2500
-55 to +150
-55 to +125
R
θJC
V
ISO
T
J
T
STG
Revision:20170701-P1
ht
t
p
:
//
www.lgesem i
.c
o
m
mail:lge@lgesemi.com

SGBJ50-10相似产品对比

SGBJ50-10 SGBJ50-08 SGBJ50-12 SGBJ50-16
描述 三相整流桥, 1000V, 50V, 500A, 1.1V, 25A, 5uA 三相整流桥, 800V, 50V, 500A, 1.1V, 25A, 5uA 三相整流桥, 1200V, 50V, 500A, 1.1V, 25A, 5uA 三相整流桥, 1600V, 50V, 500A, 1.1V, 25A, 5uA
Package SGBJ SGBJ SGBJ SGBJ
Maximum recurrent peak reverse voltage 1000 800 1200 1600
IAV(V) 50 50 50 50
Peak forward surge current 500 500 500 500
Maximum instantaneous forward voltage 1.1 1.1 1.1 1.1
Maximum average forward rectified current 25 25 25 25
Maximum reverse current 5 5 5 5
TJ(℃) -55-150 -55-150 -55-150 -55-150

 
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