PBSS5160V
60 V, 1 A PNP low V
CEsat
(BISS) transistor
Rev. 03 — 14 December 2009
Product data sheet
1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic
package.
NPN complement: PBSS4160V.
1.2 Features
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High efficiency leading to less heat generation
Reduces printed-circuit board area required
Cost effective replacement for medium power transistors BCP52 and BCX52
1.3 Applications
Major application segments
Automotive
Telecom infrastructure
Industrial
Power management
DC-to-DC conversion
Supply line switching
Peripheral driver
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
R
CEsat
[1]
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
I
C
=
−1
A;
I
B
=
−100
mA
Conditions
open base
[1]
Min
-
-
-
-
Typ
-
-
-
220
Max
−60
−1
−2
330
Unit
V
A
A
mΩ
Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.
NXP Semiconductors
PBSS5160V
60 V, 1 A PNP low V
CEsat
(BISS) transistor
2. Pinning information
Table 2.
Pin
1, 2, 5, 6
3
4
Pinning
Description
collector
base
emitter
6
5
4
3
4
1
2
3
sym030
Simplified outline
Symbol
1, 2, 5, 6
3. Ordering information
Table 3.
Ordering information
Package
Name
PBSS5160V
-
Description
plastic surface mounted package; 6 leads
Version
SOT666
Type number
4. Marking
Table 4.
Marking codes
Marking code
51
Type number
PBSS5160V
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
amb
T
stg
PBSS5160V_3
Parameter
collector-emitter
voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
peak base current
Conditions
open base
open collector
[1]
[2]
Min
-
-
-
-
-
-
-
Max
−80
−60
−5
−0.9
−1
−2
−300
−1
300
500
150
+150
+150
Unit
V
V
V
A
A
A
mA
A
mW
mW
°C
°C
°C
collector-base voltage open emitter
t = 1 ms or limited
by T
j(max)
t
p
≤
300
μs; δ ≤
0.02
[1]
[2]
-
-
-
-
−65
−65
total power dissipation T
amb
≤
25
°C
junction temperature
ambient temperature
storage temperature
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 14 December 2009
2 of 14
NXP Semiconductors
PBSS5160V
60 V, 1 A PNP low V
CEsat
(BISS) transistor
[1]
[2]
Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on a FR4 PCB, single-sided copper, tin-plated, 1 cm
2
collector mounting pad.
0.6
P
tot
(W)
(1)
001aaa714
0.4
(2)
0.2
0
0
40
80
120
160
T
amb
(°C)
(1) FR4 PCB; 1 cm
2
collector mounting pad
(2) FR4 PCB; standard footprint
Fig 1.
Power derating curves
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
[2]
Min
-
-
Typ
-
-
Max
415
250
Unit
K/W
K/W
[1]
[2]
Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on a FR4 PCB, single-sided copper, tin-plated, 1 cm
2
collector mounting pad.
PBSS5160V_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 14 December 2009
3 of 14
NXP Semiconductors
PBSS5160V
60 V, 1 A PNP low V
CEsat
(BISS) transistor
10
3
Z
th
(K/W)
10
2
(1)
(2)
(3)
(4)
(5)
(6)
(7)
001aaa715
10
(8)
(9)
(10)
1
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
Mounted on FR4 PCB; standard footprint
(1)
δ
= 1
(2)
δ
= 0.75
(3)
δ
= 0.5
(4)
δ
= 0.33
(5)
δ
= 0.2
(6)
δ
= 0.1
(7)
δ
= 0.05
(8)
δ
= 0.02
(9)
δ
= 0.01
(10)
δ
= 0
Fig 2.
Transient thermal impedance as a function of pulse time; typical values
PBSS5160V_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 14 December 2009
4 of 14
NXP Semiconductors
PBSS5160V
60 V, 1 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
Parameter
collector-base cut-off current
Conditions
V
CB
=
−60
V; I
E
= 0 A
V
CB
=
−60
V; I
E
= 0 A;
T
j
= 150
°C
I
CES
I
EBO
h
FE
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
V
CE
=
−60
V; V
BE
= 0 V
V
EB
=
−5
V; I
C
= 0 A
V
CE
=
−5
V; I
C
=
−1
mA
V
CE
=
−5
V; I
C
=
−500
mA
V
CE
=
−5
V; I
C
=
−1
A
V
CEsat
collector-emitter saturation
voltage
I
C
=
−100
mA; I
B
=
−1
mA
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−1
A; I
B
=
−100
mA
V
BEsat
R
CEsat
V
BEon
t
d
t
r
t
on
t
s
t
f
t
off
f
T
C
c
base-emitter saturation voltage
equivalent on-resistance
base-emitter turn-on voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
[1]
[1]
[1]
Min
-
-
-
-
200
150
100
-
-
-
-
[1]
Typ
-
-
-
-
350
250
160
−110
−120
−220
−0.95
220
−0.82
11
30
41
205
55
260
220
9
Max
−100
−50
−100
−100
-
-
-
−160
−175
−330
−1.1
330
−0.9
-
-
-
-
-
-
-
15
Unit
nA
μA
nA
nA
mV
mV
mV
V
mΩ
V
ns
ns
ns
ns
ns
ns
MHz
pF
I
C
=
−1
A; I
B
=
−50
mA
I
C
=
−1
A; I
B
=
−100
mA
I
C
=
−1
A; V
CE
=
−5
V
V
CC
=
−10
V; I
C
=
−0.5
A;
I
Bon
=
−0.025
A;
I
Boff
= 0.025 A
-
-
-
-
-
-
-
-
I
C
=
−50
mA; V
CE
=
−10
V;
f = 100 MHz
I
E
= i
e
= 0 A; V
CB
=
−10
V;
f = 1 MHz
150
-
[1]
PBSS5160V_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 14 December 2009
5 of 14
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