PBSS5160T
60 V, 1 A PNP low V
CEsat
(BISS) transistor
Rev. 04 — 15 January 2010
Product data sheet
1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4160T.
1.2 Features
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High efficiency due to less heat generation
Reduces Printed-Circuit Board (PCB) area required
Cost-effective replacement for medium power transistors BCP52 and BCX52
1.3 Applications
Major application segments:
Automotive
Telecom infrastructure
Industrial
Power management:
DC-to-DC conversion
Supply line switching
Peripheral driver:
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load drivers (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
R
CEsat
[1]
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
t = 1 ms or limited
by T
j(max)
I
C
=
−1
A;
I
B
=
−100
mA
[1]
Conditions
open base
Min
-
-
-
-
Typ
-
-
-
220
Max
−60
−1
−2
330
Unit
V
A
A
mΩ
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
NXP Semiconductors
PBSS5160T
60 V, 1 A PNP low V
CEsat
(BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
base
emitter
collector
1
2
3
1
2
006aab259
Simplified outline
Graphic symbol
3
3. Ordering information
Table 3.
Ordering information
Package
Name
PBSS5160T
-
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
*U6
Type number
PBSS5160T
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
Parameter
collector-emitter
voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
t
p
≤
300
μs; δ ≤
0.02
t = 1 ms or limited
by T
j(max)
Conditions
open base
open collector
[1]
[2]
Min
-
-
-
-
-
-
-
-
Max
−80
−60
−5
−0.9
−1
−2
−300
−1
Unit
V
V
V
A
A
A
mA
A
collector-base voltage open emitter
PBSS5160T_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 15 January 2010
2 of 11
NXP Semiconductors
PBSS5160T
60 V, 1 A PNP low V
CEsat
(BISS) transistor
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
tot
Parameter
Conditions
[1]
[2]
[1][3]
Min
-
-
-
-
−65
−65
Max
270
400
1.25
150
+150
+150
Unit
mW
mW
W
°C
°C
°C
total power dissipation T
amb
≤
25
°C
T
j
T
amb
T
stg
[1]
[2]
[3]
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Operated under pulse conditions: duty cycle
δ ≤
20 %, pulse width t
p
≤
10 ms.
500
P
tot
(mW)
400
(1)
mle128
300
(2)
200
100
0
0
40
80
120
160
T
amb
(°C)
(1) FR4 PCB, mounting pad for collector 1 cm
2
(2) FR4 PCB, standard footprint
Fig 1.
Power derating curves
PBSS5160T_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 15 January 2010
3 of 11
NXP Semiconductors
PBSS5160T
60 V, 1 A PNP low V
CEsat
(BISS) transistor
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
[2]
[1][3]
Min
-
-
-
Typ
-
-
-
Max
465
312
100
Unit
K/W
K/W
K/W
[1]
[2]
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Operated under pulse conditions: duty cycle
δ ≤
20 %, pulse width t
p
≤
10 ms.
10
3
Z
th
(K/W)
10
2
δ
=1
0.75
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
mle127
0
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance as a function of pulse duration; typical values
PBSS5160T_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 15 January 2010
4 of 11
NXP Semiconductors
PBSS5160T
60 V, 1 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
I
CBO
Conditions
Min
-
-
-
-
Typ
-
-
-
-
Max
−100
−50
−100
−100
Unit
nA
μA
nA
nA
collector-base cut-off V
CB
=
−60
V; I
E
= 0 A
current
V
CB
=
−60
V; I
E
= 0 A;
T
j
= 150
°C
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
V
CE
=
−60
V; V
BE
= 0 V
V
EB
=
−5
V; I
C
= 0 A
V
CE
=
−5
V
I
C
=
−1
mA
I
C
=
−500
mA
I
C
=
−1
A
V
CEsat
collector-emitter
saturation voltage
I
C
=
−100
mA; I
B
=
−1
mA
I
C
=
−500
mA;
I
B
=
−50
mA
I
C
=
−1
A; I
B
=
−100
mA
R
CEsat
V
BEsat
V
BEon
f
T
C
c
[1]
[1]
[1]
[1]
[1]
I
CES
I
EBO
h
FE
200
150
100
-
-
-
-
-
-
150
-
350
250
160
−110
−120
−220
220
−0.95
−0.82
220
9
-
-
-
−160
−175
−330
330
−1.1
−0.9
-
15
mV
mV
mV
mΩ
V
V
MHz
pF
collector-emitter
I
C
=
−1
A; I
B
=
−100
mA
saturation resistance
base-emitter
saturation voltage
base-emitter
turn-on voltage
transition frequency
I
C
=
−1
A; I
B
=
−50
mA
V
CE
=
−5
V; I
C
=
−1
A
V
CE
=
−10
V;
I
C
=
−50
mA; f = 100 MHz
collector capacitance V
CB
=
−10
V; I
E
= i
e
= 0 A;
f = 1 MHz
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
PBSS5160T_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 15 January 2010
5 of 11
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