AP18P10GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Lower Gate Charge
D
D
D
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
S
G
-100V
180mΩ
-2.7A
D
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
SO-8
S
S
Description
AP18P10 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for voltage conversion or switch applications.
G
S
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
3
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
-100
+20
-2.7
-2.1
-10
2.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
50
Unit
℃/W
1
201501082
Data and specifications subject to change without notice
AP18P10GM-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-2A
V
GS
=-4.5V, I
D
=-1A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-2A
V
DS
=-80V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=-2A
V
DS
=-50V
V
GS
=-4.5V
V
DS
=-50V
I
D
=-1A
R
G
=3.3
V
GS
=-10V
V
GS
=0V
V
DS
=-25V
f=1.0MHz
Min.
-100
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
8.4
-
-
14
4
7
10
5
55
22
Max. Units
-
180
210
-3
-
-25
+100
22.4
-
-
-
-
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
o
1500 2400
120
70
-
-
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=-2A, V
GS
=0V
I
S
=-2A, V
GS
=0V,
dI/dt=-100A/µs
Min.
-
-
-
Typ.
-
40
75
Max. Units
-1.3
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board,t < 10sec ; 125
℃/W
when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP18P10GM-HF
40
20
T
A
= 25
o
C
-I
D
, Drain Current (A)
30
-I
D
, Drain Current (A)
-10V
-7.0V
-5.0V
-4.5V
T
A
= 150 C
16
o
-10V
-7.0V
-5.0V
-4.5V
12
20
8
V
G
= - 3.0V
4
10
V
G
= - 3.0V
0
0
4
8
12
16
20
24
0
0
2
4
6
8
10
12
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
160
2.4
I
D
=-2A
T
A
=25
℃
2.0
150
I
D
=-2A
V
G
=-10V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
1.6
140
1.2
130
0.8
120
0.4
2
4
6
8
10
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
8
1.2
6
Normalized V
GS(th)
1.2
1.4
-I
S
(A)
1
4
T
j
=150
o
C
T
j
=25
o
C
0.8
2
0.6
0
0.4
0
0.2
0.4
0.6
0.8
1
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP18P10GM-HF
10
2400
f=1.0MHz
-V
GS
, Gate to Source Voltage (V)
I
D
= -2A
V
DS
= -50V
2000
8
1600
6
C (pF)
C
iss
1200
4
800
2
400
0
0
10
20
30
40
0
1
5
9
13
17
21
C
oss
C
rss
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (R
thja
)
0.2
10
-I
D
(A)
Operation in this area
limited by R
DS(ON)
100us
1ms
0.1
0.1
0.05
1
0.02
10ms
100ms
T
A
=25 C
Single Pulse
0.01
0.01
0.1
1
10
0.01
P
DM
0.01
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=125
o
C/W
0.1
o
1s
DC
100
1000
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
-4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP18P10GM-HF
MARKING INFORMATION
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
18P10GM
YWWSSS
5
GD32 MCU
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