DISCRETE SEMICONDUCTORS
DATA SHEET
age
M3D102
PBSS5140U
40 V low V
CEsat
PNP transistor
Product data sheet
Supersedes data of 2001 Mar 27
2001 Jul 20
NXP Semiconductors
Product data sheet
40 V low V
CEsat
PNP transistor
FEATURES
•
Low collector-emitter saturation voltage
•
High current capability
•
Improved device reliability due to reduced heat
generation
•
Enhanced performance over SOT23 1A standard
packaged transistor.
APPLICATIONS
•
General purpose switching and muting
•
LCD back lighting
•
Supply line switching circuits
•
Battery driven equipment (mobile phones, video
cameras and hand-held devices).
handbook, halfpage
PBSS5140U
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
CM
R
CEsat
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
PARAMETER
collector-emitter voltage
peak collector current
equivalent on-resistance
MAX.
−40
−2
<500
UNIT
V
A
mΩ
3
DESCRIPTION
PNP low V
CEsat
transistor in a SOT323 (SC-70) plastic
package.
MARKING
1
2
MAM048
3
1
2
TYPE NUMBER
PBSS5140U
MARKING CODE
51t
Fig.1
Top view
Simplified outline (SOT323; SC-70) and
symbol.
2001 Jul 20
2
NXP Semiconductors
Product data sheet
40 V low V
CEsat
PNP transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Notes
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
T
amb
≤
25
°C;
note 2
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
PBSS5140U
MAX.
−40
−40
−5
−1
−2
−1
250
350
+150
150
+150
V
V
V
A
A
A
UNIT
mW
mW
°C
°C
°C
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
in free air; note 2
VALUE
500
357
UNIT
K/W
K/W
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm
2
.
2001 Jul 20
3
NXP Semiconductors
Product data sheet
40 V low V
CEsat
PNP transistor
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CEO
I
EBO
h
FE
PARAMETER
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
CONDITIONS
V
CB
=
−40
V; I
C
= 0
V
CB
=
−40
V; I
C
= 0; T
amb
= 150
°C
V
CE
=
−30
V; I
B
= 0
V
EB
=
−5
V; I
C
= 0
V
CE
=
−5
V; I
C
=
−1
mA
V
CE
=
−5
V; I
C
=
−100
mA
V
CE
=
−5
V; I
C
=
−500
mA
V
CE
=
−5
V; I
C
=
−1
A
V
CEsat
saturation voltage
I
C
=
−100
mA; I
B
=
−1
mA
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−1
A; I
B
=
−100
mA
R
CEsat
V
BEsat
V
BEon
f
T
C
c
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
I
C
=
−500
mA; I
B
=
−50
mA; note 1
I
C
=
−1
A; I
B
=
−50
mA
V
CE
=
−5
V; I
C
=
−1
A
I
C
=
−50
mA; V
CE
=
−10
V;
f = 100 MHz
V
CB
=
−10
V; I
E
= I
e
= 0; f = 1 MHz
MIN.
−
−
−
−
300
300
250
160
−
−
−
−
−
−
150
−
PBSS5140U
TYP.
−
−
−
−
−
−
−
−
−
−
−
300
−
−
−
−
MAX.
−100
−50
−100
−100
−
800
−
−
−200
−250
−500
<500
−1.1
−1
−
12
UNIT
nA
μA
nA
nA
mV
mV
mV
mΩ
V
V
MHz
pF
2001 Jul 20
4
NXP Semiconductors
Product data sheet
40 V low V
CEsat
PNP transistor
PBSS5140U
handbook, halfpage
1200
MLD543
handbook, halfpage
−10
MLD544
hFE
VBE
800
(1)
(V)
−1
(2)
(1)
(2)
(3)
400
(3)
0
−10
−1
−1
−10
−10
2
−10
3
−10
4
IC (mA)
−10
−1
−10
−1
−1
−10
−10
2
−10
3
−10
4
IC (mA)
V
CE
=
−5
V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
V
CE
=
−5
V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.2
DC current gain as a function of collector
current; typical values.
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
−10
3
handbook, halfpage
VCEsat
(mV)
−10
2
(1)
MLD545
10
2
handbook, halfpage
RCEsat
(Ω)
10
MLD677
(3)
(2)
(1)
(2)
−10
1
(3)
−1
−1
−10
−10
2
−10
3
IC (mA)
−10
4
10
−1
−10
−1
−1
−10
−10
−2
−10
−3
−10
−4
IC (mA)
I
C
/I
B
= 10.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
I
C
/I
B
= 10.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5
Equivalent on-resistance as a function of
collector current; typical values.
2001 Jul 20
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
