AP18P10GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Lower Gate Charge
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
G
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
-100V
180mΩ
-12A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP18P10GJ) is
available for low-profile applications.
G
D
S
G
D
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
.
Rating
-100
+20
-12
-10
-48
35.7
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
3.5
62.5
110
Units
℃/W
℃/W
℃/W
1
201501134
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
AP18P10GH/J-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=-1mA
V
GS
=-10V, I
D
=-8A
V
GS
=-4.5V, I
D
=-6A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=V
GS
, I
D
=-250uA
V
DS
= -10V, I
D
= -8A
V
DS
=-80V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=-8A
V
DS
=-80V
V
GS
=-4.5V
V
DS
=-50V
I
D
=-8A
R
G
=3.3Ω
V
GS
=-10V
V
GS
=0V
V
DS
=-25V
f=1.0MHz
f=1.0MHz
Min.
-100
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
14
-
-
-
16
4.4
8.7
9
14
45
40
110
70
8
Max. Units
-
180
210
-3
-
-10
-250
+100
25.6
-
-
-
-
-
-
-
-
12
V
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=-80V, V
GS
=0V
.
1590 2550
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Test Conditions
I
S
=-12A, V
GS
=0V
I
S
=-8A, V
GS
=0V,
dI/dt=-100A/µs
Min.
-
-
-
Typ.
-
49
110
Max. Units
-1.3
-
-
V
ns
nC
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP18P10GH/J-HF
40
20
T
C
= 25
o
C
-I
D
, Drain Current (A)
30
-I
D
, Drain Current (A)
-10V
-7.0V
-5.0V
-4.5V
T
C
=150
o
C
15
-10V
-7.0V
-5.0V
-4.5V
20
10
V
G
= -3.0V
5
10
V
G
= -3.0 V
0
0
4
8
12
16
20
0
0
2
4
6
8
10
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
300
2.0
270
I
D
= -8 A
T
C
=25
℃
Normalized R
DS(ON)
1.6
I
D
= - 12 A
V
G
= -10V
R
DS(ON)
(m
Ω
)
240
210
1.2
.
180
150
0.8
120
0.4
2
4
6
8
10
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
8
6
1.5
4
T
j
=150
o
C
T
j
=25
o
C
Normalized V
GS(th)
-I
S
(A)
1.0
2
0.5
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP18P10GH/J-HF
f=1.0MHz
12
10000
10
-V
GS
, Gate to Source Voltage (V)
8
V
DS
= - 80 V
I
D
= -8A
C (pF)
C
iss
1000
6
4
100
C
oss
C
rss
2
0
0
10
20
30
40
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
Operation in this area
limited by R
DS(ON)
10
100us
0.2
0.1
-I
D
(A)
1ms
1
.
0.1
0.05
P
DM
t
0.02
T
C
=25
o
C
Single Pulse
0
0.1
1
10
10ms
100ms
DC
T
0.01
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.01
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
15
V
DS
= -5V
12.5
T
j
=25
o
C
T
j
=150
o
C
V
G
Q
G
-I
D
, Drain Current (A)
10
-4.5V
Q
GS
Q
GD
7.5
5
2.5
Charge
0
0
2
4
6
Q
-V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP18P10GH/J-HF
MARKING INFORMATION
TO-251
18P10GJ
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-252
18P10GH
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
.
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
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