AP18N20GI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Low Gate Charge
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D3
200V
170mΩ
18A
S
Description
AP18N20 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
200
+20
18
9.5
60
34.7
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Drain Current, V
GS
@ 10V
3
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
3.6
65
Units
℃/W
℃/W
1
201412155
Data and specifications subject to change without notice
AP18N20GI-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=8A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=10A
V
DS
=200V, V
GS
=0V
V
GS
=+20V , V
DS
=0V
I
D
=10A
V
DS
=160V
V
GS
=10V
V
DD
=100V
I
D
=11A
R
G
=9.1Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Min.
200
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
9.5
-
-
-
19
5
6
9
21
25
19
185
3
1.6
Max. Units
-
170
4
-
10
250
+100
30
-
-
-
-
-
-
-
-
3.2
V
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=160V
,
V
GS
=0V
1065 1700
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=10A, V
GS
=0V
I
S
=10A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
180
1150
Max. Units
1.3
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max junction temperature.
2.Pulse test
3.Ensure that the junction temperature does not exceed T
Jmax.
.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP18N20GI-HF
40
30
T
C
=25
o
C
I
D
, Drain Current (A)
30
I
D
, Drain Current (A)
16V
12 V
10 V
8.0V
V
G
= 6 . 0V
T
C
=150 C
o
16V
12 V
10 V
8.0V
V
G
=6.0V
20
20
10
10
0
0.0
4.0
8.0
12.0
0
0.0
4.0
8.0
12.0
16.0
20.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
240
2.8
I
D
=5A
220
T
C
=25 C
Normalized R
DS(ON)
o
2.4
I
D
=8A
V
G
=10V
200
2.0
R
DS(ON)
(m
Ω
)
180
1.6
160
1.2
140
0.8
120
2
4
6
8
10
0.4
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
14
12
1.3
10
I
S
(A)
8
T
j
=150
o
C
T
j
=25 C
o
Normalized V
GS(th)
1.1
6
0.9
4
0.7
2
0
0
0.2
0.4
0.6
0.8
1
1.2
0.5
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP18N20GI-HF
12
10000
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
10
I
D
=10A
1000
8
C (pF)
V
DS
= 100 V
V
DS
= 130 V
V
DS
= 160 V
C
iss
6
100
C
oss
4
10
2
C
rss
0
0
4
8
12
16
20
24
1
1
21
41
61
81
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor = 0.5
Normalized Thermal Response (R
thjc
)
0.2
10
100us
0.1
0.1
I
D
(A)
0.05
1ms
1
0.02
0.01
P
DM
0.01
Single Pulse
t
T
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
T
C
=25 C
Single Pulse
0
0.1
1
10
100
o
10ms
100ms
1s
DC
1000
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
15
V
DS
=5V
12
V
G
Q
G
I
D
, Drain Current (A)
9
10V
T
j
=150 C
o
T
j
=25 C
o
Q
GS
Q
GD
6
3
Charge
0
Q
0
2
4
6
8
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP18N20GI-HF
MARKING INFORMATION
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
18N20GI
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
电子竞赛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
