Power Field-Effect Transistor,
参数名称 | 属性值 |
厂商名称 | Infineon(英飞凌) |
Reach Compliance Code | compliant |
SP001127812 | IPD33CN10N G | IPP35CN10NGXKSA1 | IPP35CN10N G | IPP35CN10NGHKSA1 | |
---|---|---|---|---|---|
描述 | Power Field-Effect Transistor, | mosfet optimos 2 pwr transt 100v 27a | MOSFET N-CH 100V 27A TO220-3 | MOSFET N-CH 100V 27A TO220-3 | Power Field-Effect Transistor, 27A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN |
厂商名称 | Infineon(英飞凌) | - | Infineon(英飞凌) | - | Infineon(英飞凌) |
Reach Compliance Code | compliant | - | compliant | - | unknown |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved