AP09N90W-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
100% Avalanche test
▼
Fast Switching Characteristic
▼
Simple Drive Requirement
▼
RoHS Compliant & Halogen-Free
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
900V
1.2Ω
8.6A
G
S
Description
AP09N90 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-3P package is widely preferred for commercial-industrial
surface mount applications and suited for higher voltage
applications such as SMPS.
G
D
TO-3P
S
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
2
Rating
900
+30
8.6
5
30
240
1.92
18
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
0.52
40
Units
℃/W
℃/W
1
201501124
Data & specifications subject to change without notice
AP09N90W-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
3
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
=0V, I
D
=1mA
V
GS
=10V, I
D
=4.5A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=4.5A
V
DS
=720V, V
GS
=0V
V
GS
=+30V, V
DS
=0V
I
D
=8.6A
V
DS
=540V
V
GS
=10V
V
DD
=450V
I
D
=5A
R
G
=10Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
900
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
11.5
-
-
-
67
17
20
26
10
300
540
220
50
Max. Units
-
1.2
4
-
100
500
+100
120
-
-
-
-
-
-
-
-
V
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=720V
,
V
GS
=0V
4100 6560
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
Notes:
1.Pulse width limited by Max. junction temperature.
o
2.Starting T
j
=25 C , V
DD
=50V , L=1mH , R
G
=25Ω
Parameter
Continuous Source Current ( Body Diode )
Test Conditions
V
D
=V
G
=0V , V
S
=1.5V
Min.
-
Typ.
-
-
-
Max. Units
8.6
30
1.5
A
A
V
Pulsed Source Current ( Body Diode )
1
Forward On Voltage
3
T
j
=25℃, I
S
=8.6A, V
GS
=0V
-
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP09N90W-HF
21
10
T
C
=25 C
I
D
, Drain Current (A)
o
10V
5.5V
8
T
C
=150
o
C
I
D
, Drain Current (A)
10V
5.0V
4.5V
14
5.0V
6
4
V
GS
= 4.0 V
7
V
GS
=4.0V
2
0
0
10
20
30
40
0
0
12
24
36
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.3
3
I
D
=4.5A
V
GS
=10V
Normalized BV
DSS
1.1
Normalized R
DS(ON)
2
0.9
1
0.7
-50
0
50
100
150
0
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature (
o
C )
Fig 3. Normalized BV
DSS
v.s. Junction
Fig 4. Normalized On-Resistance
10
4
I
S
(A)
1
T
j
= 150
o
C
T
j
= 25
o
C
V
GS(th)
(V)
3
2
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP09N90W-HF
f=1.0MHz
12
10000
I
D
=8.6A
V
GS
, Gate to Source Voltage (V)
10
Ciss
8
V
DS
=180V
V
DS
=360V
V
DS
=540V
6
C (pF)
Coss
100
Crss
4
2
0
0
10
20
30
40
50
60
70
80
90
1
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10us
I
D
(A)
10
Normalized Thermal Response (R
thjc
)
Duty Factor = 0.5
0.2
100us
1ms
1
0.1
0.1
0.05
P
DM
0.02
0.01
t
T
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
10ms
T
C
=25 C
Single Pulse
0.1
o
Single Pulse
100ms
DC
100
1000
10000
0.01
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP09N90W-HF
MARKING INFORMATION
Part Number
09N90W
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
模拟与混合信号
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