AP09N90CW-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Minimize On-resistance
▼
Fast Switching
▼
Simple Drive Requirement
▼
RoHS Compliant & Halogen-Free
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
900V
1.4Ω
7.6A
G
S
Description
AP09N90C series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-3P package is widely preferred for commercial-industrial
surface mount applications and suited for higher voltage
applications such as SMPS.
G
D
S
TO-3P
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
900
+30
7.6
4.8
25
208
1.6
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
0.6
40
Unit
℃/W
℃/W
Data & specifications subject to change without notice
1
201501125
AP09N90CW-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
=0V, I
D
=1mA
V
GS
=10V, I
D
=3.6A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=3.6A
V
DS
=900V, V
GS
=0V
V
GS
=+30V, V
DS
=0V
I
D
=7.2A
V
DS
=540V
V
GS
=10V
V
DD
=450V
I
D
=7.2A
R
G
=6.8Ω
V
GS
=10V
V
GS
=0V
V
DS
=15V
f=1.0MHz
Min.
900
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.74
1.25
-
3.6
-
-
-
50.7
12
16
20
16
65
27
3097
516
19
Max. Units
-
-
1.4
4
-
10
500
+100
80
-
-
-
-
-
-
5000
-
-
V
V/℃
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=720V
,
V
GS
=0V
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=7.2A, V
GS
=0V
I
S
=7.2A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
673
9.6
Max. Units
1.5
-
-
A
ns
µC
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP09N90CW-HF
10
5
T
C
=25 C
8
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0V
5.0V
T
C
=150 C
4
o
10V
7.0V
5.0V
4.5V
6
3
4
4.5V
2
V
G
=4.0V
1
2
V
G
=4.0V
0
0
2
4
6
8
10
12
14
16
18
0
0
2
4
6
8
10
12
14
16
18
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3.0
I
D
=3.6A
2.5
V
G
=10V
1.1
Normalized BV
DSS
Normalized R
DS(ON)
2.0
1
1.5
1.0
0.9
0.5
0.8
-50
0
50
100
150
0.0
-50
0
50
100
150
Junction Temperature ( C)
o
T
j
, Junction Temperature ( C)
o
Fig 3. Normalized BV
DSS
v.s. Junction
Fig 4. Normalized On-Resistance
100
4
T
j
= 150
o
C
T
j
= 25
o
C
V
GS(th)
(V)
10
3
I
S
(A)
1
2
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP09N90CW-HF
15
10000
f=1.0MHz
I
D
=7.2A
V
GS
, Gate to Source Voltage (V)
12
9
V
DS
=180V
V
DS
=360V
V
DS
=540V
C (pF)
Ciss
1000
6
100
Coss
3
Crss
0
0
20
40
60
80
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
DUTY=0.5
Normalized Thermal Response (R
thjc
)
0.2
0.1
10
0.1
0.05
I
D
(A)
100us
1ms
0.02
0.01
1
10ms
100ms
T
c
=25
o
C
Single Pulse
DC
100
1000
10000
Single Pulse
P
DM
0.01
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.1
1
10
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP09N90CW-HF
MARKING INFORMATION
Part Number
09N90CW
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
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