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GBJ602: 产品描述6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE; 产品类别半导体分立半导体; 文件大小468KB，共2页; 制造商SUNTAN; 官网地址http://www.suntan.com.hk/

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GBJ602概述

6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

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Suntan Su

GBJ6005 THRU GBJ610

Single Phase 6.0 AMPS. Glass Passivated Bridge Rectifiers

Voltage Range 50 to 1000 Volts

Current 6.0 Amperes

6KBJ

FEATU R E S

◆Ideal

for printed circuit board

◆Reliable

low cost construction technique

results in inexpensive product

◆High

temperature soldering guaranteed:

260℃

/ 10 seconds / 0.375” ( 9.5mm )

lead length at 5 lbs., ( 2.3 kg ) tension

◆UL

Recognized File number: E347215

MECHANICAL DATA

◆Case:

Molded plastic

◆Lead:

solder plated

◆Polarity:

As marked

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%

Type Number

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

Maximum Average Forward Rectified Current See Fig.2

Peak Forward Surge Current, 8.3 ms Single

Half Sine-wave Superimposed on Rated

Load (JEDEC method )

Maximum Instantaneous Forward Voltage @ 6.0A

Maximum DC Reverse Current @ T

=25℃

rated DC blocking voltage per leg T

= 125℃

θJA

Typical Thermal Resistance (Note)

θJL

Operating Temperature Range

Storage Temperature Range

STG

RRM

RMS

(AV)

GBJ

6005

GBJ

601

GBJ

602

GBJ

604

GBJ

606

GBJ

608

GBJ

610

UNITS

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

1000

6.0

1500

1.0

5.0

500

1.8

-55 to +150

FSM

μA

℃/W

℃

NOTE

：

Thermal Resistance from Junction to Case with Device Mounted on 75×75×1.6mm Cu Plate Heatsink

GBJ602相似产品对比

	GBJ602	GBJ606	GBJ601	GBJ6005	GBJ610	GBJ608	GBJ604
描述	6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	2.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	2.8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE	2.8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	2.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	6 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

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