Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
| 参数名称 | 属性值 |
| 厂商名称 | Fairchild |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 其他特性 | LOW NOISE |
| 最大集电极电流 (IC) | 0.1 A |
| 集电极-发射极最大电压 | 60 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 250 |
| JESD-30 代码 | R-PDSO-G3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | NPN |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| MMBT2484D87Z | MMBT2484L99Z | PN2484J05Z | PN2484D26Z | PN2484D27Z | PN2484D74Z | PN2484D75Z | PN2484J18Z | MMBT2484S62Z | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon | Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon | Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN | Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN | Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon |
| Reach Compliance Code | unknown | unknown | unknown | compliant | compliant | compliant | compliant | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 厂商名称 | Fairchild | - | Fairchild | Fairchild | Fairchild | Fairchild | Fairchild | Fairchild | Fairchild |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | CYLINDRICAL, O-PBCY-T3 | - | - | - | - | CYLINDRICAL, O-PBCY-T3 | SMALL OUTLINE, R-PDSO-G3 |
| 其他特性 | LOW NOISE | - | LOW NOISE | - | LOW NOISE | - | - | LOW NOISE | LOW NOISE |
| 最大集电极电流 (IC) | 0.1 A | - | 0.1 A | - | 0.1 A | - | - | 0.1 A | 0.1 A |
| 集电极-发射极最大电压 | 60 V | - | 60 V | - | 60 V | - | - | 60 V | 60 V |
| 配置 | SINGLE | - | SINGLE | - | SINGLE | - | - | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 250 | - | 250 | - | 250 | - | - | 250 | 250 |
| JESD-30 代码 | R-PDSO-G3 | - | O-PBCY-T3 | - | O-PBCY-T3 | - | - | O-PBCY-T3 | R-PDSO-G3 |
| 元件数量 | 1 | - | 1 | - | 1 | - | - | 1 | 1 |
| 端子数量 | 3 | - | 3 | - | 3 | - | - | 3 | 3 |
| 最高工作温度 | 150 °C | - | 150 °C | - | 150 °C | - | - | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | - | PLASTIC/EPOXY | - | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | - | ROUND | - | ROUND | - | - | ROUND | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | - | CYLINDRICAL | - | CYLINDRICAL | - | - | CYLINDRICAL | SMALL OUTLINE |
| 极性/信道类型 | NPN | - | NPN | - | NPN | - | - | NPN | NPN |
| 认证状态 | Not Qualified | - | Not Qualified | - | Not Qualified | - | - | Not Qualified | Not Qualified |
| 表面贴装 | YES | - | NO | - | NO | - | - | NO | YES |
| 端子形式 | GULL WING | - | THROUGH-HOLE | - | THROUGH-HOLE | - | - | THROUGH-HOLE | GULL WING |
| 端子位置 | DUAL | - | BOTTOM | - | BOTTOM | - | - | BOTTOM | DUAL |
| 晶体管应用 | AMPLIFIER | - | AMPLIFIER | - | AMPLIFIER | - | - | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | - | SILICON | - | SILICON | - | - | SILICON | SILICON |
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