Pb Free Product
http://www.ncepower.com
NCE01P30
NCE P-Channel
Enhancement Mode Power MOSFET
Description
The NCE01P30 uses advanced trench technology and design
to provide excellent R
DS(ON)
with low gate charge. It can be
used in a wide variety of applications. It is ESD protested.
General Features
●
V
DS
=-100V,I
D
=-30A
R
DS(ON)
<58mΩ @ V
GS
=-10V (Typ:50mΩ)
●
Super high dense cell design
●
Advanced trench process technology
●
Reliable and rugged
●
High density cell design for ultra low On-Resistance
Schematic diagram
Application
●
Portable equipment and battery powered systems
Marking and pin assignment
100% UIS TESTED!
100%
∆Vds
TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
NCE01P30
Device
NCE01P30
Device Package
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T
C
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(T
C
=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
D
(100℃)
Limit
-100
±20
-30
-21
-120
120
0.8
-55 To 175
Unit
V
V
A
A
A
W
W/℃
℃
I
DM
P
D
T
J
,T
STG
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
Pb Free Product
http://www.ncepower.com
NCE01P30
R
θJc
1.25
℃
/W
Thermal Characteristic
Thermal Resistance,Junction-to-Case
(Note 2)
Electrical Characteristics (T
C
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
C
lss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
I
S
t
rr
Qrr
t
on
Condition
V
GS
=0V I
D
=-250μA
V
DS
=-100V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-10V, I
D
=-15A
V
DS
=-50V,I
D
=-10A
Min
-100
-
-
-1.5
-
5
-
-
-
-
Typ
-
-
-
-1.9
50
-
2700
790
450
17
80
45
65
90
15
35
-
-
90
70
Max
-
1
±10
-2.5
58
-
-
-
-
-
-
-
-
-
-
-
-1.2
-30
-
-
Unit
V
μA
μA
V
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
nS
nC
V
DS
=-25V,V
GS
=0V,
F=1.0MHz
V
DD
=-50V,I
D
=-15A
V
GS
=-10V,R
GEN
=9.1Ω
-
-
-
-
-
-
-
-
-
-
V
DS
=-50V,I
D
=-15A,
V
GS
=-10V
V
GS
=0V,I
S
=-10A
-
TJ = 25°C, IF =-15A
di/dt = 100A/μs
(Note3)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
5.
EAS condition：Tj=25℃,V
DD
=-50V,V
G
=-10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0
Pb Free Product
http://www.ncepower.com
NCE01P30
Test Circuit
1) E
AS
Test Circuit
2) Gate Charge Test Circuit
3) Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
v1.0
Pb Free Product
http://www.ncepower.com
Typical Electrical and Thermal Characteristics (Curves)
NCE01P30
I
D
- Drain Current (A)
Normalized On-Resistance
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 1 Output Characteristics
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
Vgs Gate-Source Voltage (V)
I
D
- Drain Current (A)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
-I
D
- Drain Current (A)
-I
s
- Reverse Drain Current (A)
Rdson On-Resistance(mΩ)
-Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
Wuxi NCE Power Semiconductor Co., Ltd
Page 4
v1.0
Pb Free Product
http://www.ncepower.com
NCE01P30
C Capacitance (nF)
I
D
- Drain Current (A)
-Vds Drain-Source Voltage (V)
T
C
Case Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 Drain Current vs Case Temperature
Power Dissipation (w)
I
D
- Drain Current (A)
-Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10
Power De-rating
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
