INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
DESCRIPTION
·
Collector-Emitter Sustaining Voltage-
: V
CEO(SUS)
= 800V(Min)
·High
Switching Speed
APPLICATIONS
·Designed
for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
·Switching
regulators
·Inverters
·Solenoid
and relay drivers
·Motor
controls
·Deflection
circuits
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CEV
V
CEO(SUS)
V
EBO
I
C
I
CM
I
B
B
MJ8503
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
1400
800
8
5
10
4
8
150
200
-65~200
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.16
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
(sat)-
1
V
CE
(sat)-
2
V
BE
(sat)
I
CEV
I
CER
I
EBO
h
FE
C
OB
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Output Capacitance
CONDITIONS
I
C
=100mA ; I
B
=0
I
C
= 2.5A; I
B
= 1A
I
C
= 2.5A; I
B
= 1A,T
C
=100℃
I
C
= 5A; I
B
= 2A
B
MJ8503
MIN
800
TYP.
MAX
UNIT
V
2.0
3.0
5.0
1.5
1.5
0.25
5.0
5.0
1.0
7.5
60
300
V
V
V
mA
mA
mA
I
C
= 2.5A; I
B
= 1A
I
C
= 2.5A; I
B
= 1A,T
C
=100℃
V
CEV
=1400V;V
BE
(off)
=1.5V
V
CEV
=1400V;V
BE
(off)
=1.5V;T
C
=150℃
V
CE
= 1400V; R
BE
= 50Ω,T
C
= 100℃
V
EB
= 7.0V; I
C
=0
I
C
= 1.0A ; V
CE
= 5V
I
E
= 0; V
CB
= 10V; f
test
=1.0kHz
pF
Switching times;Resistive Load
t
d
t
r
t
s
t
f
Delay Time
Rise Time
Storage Time
Fall Time
I
C
= 2.5A , V
CC
= 500V;
I
B1
= 1A;t
p
= 50μs; V
BE
(off)
= 5V
Duty Cycle≤2.0%
40
125
1200
650
200
2000
4000
2000
ns
ns
ns
ns
isc Website：www.iscsemi.cn
2
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